IP Library Granted Patent US 12,497,693
Granted Patent B2
US 12,497,693 · App. 18/618,210 · Granted Dec 16, 2025

Modular flow chamber kits, processing chambers, and related apparatus and methods applicable for semiconductor manufacturing

Inventor: Zhepeng Cong (San Jose, CA)
Assignee: APPLIED MATERIALS, INC.
C23C16/45551C23C16/4404C23C16/45527H01L21/67028H01L21/67069H01L21/68742H01L21/68792
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Quick Facts
Patent No.
US 12,497,693
App. No.
18/618,210
Granted
Dec 16, 2025
Kind
B2
Abstract

Embodiments of the present disclosure relate to modular flow chamber kits, processing chambers, and related apparatus and methods applicable for semiconductor manufacturing. In one or more embodiments, a processing chamber includes a chamber body at least partially defining a processing volume. The chamber body includes a plurality of inject passages arranged in a plurality of flow levels, and one or more exhaust passages formed in the chamber body. The processing chamber includes one or more heat sources operable to heat the processing volume, a substrate support disposed in the processing volume, and a plate spaced from the substrate support. The substrate support and the plate are movable by at least one flow level of the plurality of flow levels to align the substrate support between one or more first inject passages of a first flow level and one or more second inject passages of a second flow level.

Claims (51)

1 . A processing chamber applicable for semiconductor manufacturing, comprising:

a chamber body at least partially defining a process volume, the chamber body comprising:

a plurality of inject passages formed in the chamber body and arranged in a plurality of flow levels, and

one or more exhaust passages formed in the chamber body;

one or more heat sources operable to heat a processing volume;

a substrate support disposed in the processing volume;

a plate spaced from the substrate support, the substrate support and the plate movable by at least one flow level of the plurality of flow levels to align the substrate support between one or more first inject passages of a first flow level and one or more second inject passages of a second flow level, the plate comprising a first protrusion extending relative to a first outer surface of the plate;

one or more first flow openings operable to flow a gas into a gap between the chamber body and the plate; and

one or more second flow openings and one or more third flow openings operable to exhaust the gas out of the gap.

2 . The processing chamber of claim 1 , wherein the plate comprises at least one opaque outer surface, and the plate has a solid cross section across an outer dimension of the plate.

3 . The processing chamber of claim 1 , wherein the chamber body further comprises a liner at least partially lining a metallic body, and the gap is between the liner and the plate.

4 . The processing chamber of claim 3 , wherein the liner has an inner dimension that is larger than an outer dimension of the plate to define a gap between the inner dimension and the outer dimension.

5 . The processing chamber of claim 4 , wherein the gap is less than 1.0 mm.

6 . The processing chamber of claim 3 , wherein:

the liner comprises an inner face;

the one or more first flow openings extend into the inner face;

the one or more second flow openings extend into the inner face on a first side of the one or more first flow openings; and

the one or more third flow openings extend into the inner face on a second side of the one or more first flow openings.

7 . The processing chamber of claim 1 , wherein the plate further comprises a second protrusion extending relative to a second outer surface of the plate, wherein the first protrusion surrounds the first outer surface and the second protrusion surrounds the second outer surface.

8 . The processing chamber of claim 1 , further comprising a shaft extending through a lift opening of a metallic base of the processing chamber, wherein the shaft is coupled to the substrate support.

9 . The processing chamber of claim 8 , wherein the lift opening at least partially defines an inner face of the metallic base, and the metallic base comprises:

one or more first flow openings extending into the inner face;

one or more second flow openings extending into the inner face on a first side of the one or more first flow openings of the metallic base; and

one or more third flow openings extending into the inner face on a second side of the one or more first flow openings of the metallic base.

10 . The processing chamber of claim 9 , wherein a gap between the shaft and the inner face of the metallic base is less than 1.0 mm.

11 . A chamber kit applicable for semiconductor manufacturing, comprising:

a liner comprising:

an inner face,

one or more first flow openings extending into the inner face,

one or more second flow openings extending into the inner face on a first side of the one or more first flow openings, and

one or more third flow openings extending into the inner face on a second side of the one or more first flow openings;

a plate sized and shaped for positioning within the inner face of the liner, the plate comprising an outer section sized and shaped to span the one or more first flow openings, the one or more second flow openings, and the one or more third flow openings, the outer section of the plate comprising:

a first protrusion extending relative to a first outer surface of the plate, and

a second protrusion extending relative to a second outer surface of the plate, the first protrusion surrounding the first outer surface and the second protrusion surrounding the second outer surface.

12 . The chamber kit of claim 11 , wherein the plate comprises at least one opaque outer surface.

13 . The chamber kit of claim 12 , wherein the plate comprises silicon carbide (SiC), and the plate has a solid cross section across an outer dimension of the plate.

14 . The chamber kit of claim 11 , wherein:

the liner has an inner dimension that is larger than an outer dimension of the plate to define a gap between the inner dimension and the outer dimension;

the one or more first flow openings are operable to flow a gas into the gap; and

the one or more second flow openings and the one or more third flow openings are operable to exhaust the gas out of the gap.

15 . The chamber kit of claim 14 , wherein the gap is less than 1.0 mm.

16 . A chamber kit applicable for semiconductor manufacturing, comprising:

a liner comprising:

an inner face,

one or more first flow openings extending into the inner face,

one or more second flow openings extending into the inner face on a first side of the one or more first flow openings, and

one or more third flow openings extending into the inner face on a second side of the one or more first flow openings;

a plate sized and shaped for positioning within the inner face of the liner, the plate comprising an outer section sized and shaped to span the one or more first flow openings, the one or more second flow openings, and the one or more third flow openings, the liner having an inner dimension that is larger than an outer dimension of the plate to define a gap between the inner dimension and the outer dimension, the one or more first flow openings operable to flow a gas into the gap, and the one or more second flow openings and the one or more third flow openings operable to exhaust the gas out of the gap.

17 . The chamber kit of claim 16 , wherein the plate comprises at least one opaque outer surface.

18 . The chamber kit of claim 16 , wherein the plate comprises silicon carbide (SiC), and the plate has a solid cross section across the outer dimension of the plate.

19 . The chamber kit of claim 16 , wherein the gap is less than 1.0 mm.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 10, 2024
From: CONG, ZHEPENG
To: APPLIED MATERIALS, INC.
Reel/Frame 067064/0197 →
Continuity (1)
Related Publication 20250305137A1 · Oct 2, 2025
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