IP Library › Granted Patent US 12,500,072
Granted Patent B2
US 12,500,072 · App. 17/654,577 · Granted Dec 16, 2025

Plasma chamber with ancillary reaction chamber

Inventors: George Stephen Leonard, III (San Jose, CA); Stefan Andrew McClelland (San Jose, CA); John Joseph Rehagen (Sunnyvale, CA); Jae Mo Koo (Palo Alto, CA)
Assignee: RECARBON, INC.
H01J37/32844H01J37/32229H01J37/32467H01J37/32899
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Quick Facts
Patent No.
US 12,500,072
App. No.
17/654,577
Granted
Dec 16, 2025
Kind
B2
Abstract

A plasma reaction system may include a plasma chamber and an ancillary reaction chamber. The plasma chamber may include a plasma chamber inlet for introducing reactant gases into the plasma chamber, plasma chamber walls that form an interior space in which chemical reactions between the reactant gases may occur, a plasma generated within the plasma chamber, a waveguide for directing energy towards the plasma generated within the plasma chamber, and a plasma chamber outlet for carrying first outlet gases from the plasma chamber. The ancillary reaction chamber may include an ancillary reaction chamber inlet configured to obtain the first outlet gases from the plasma chamber, ancillary reaction chamber walls that form an interior space of the ancillary reaction chamber in which second chemical reactions between the outlet gases may occur, and an ancillary reaction chamber outlet for carrying second outlet gases from the ancillary reaction chamber.

Claims (44)

1 . A plasma reaction system, comprising:

a plasma chamber that includes:

one or more plasma chamber inlets for introducing one or more reactant gases into the plasma chamber;

one or more plasma chamber walls that form an interior space of the plasma chamber, one or more first chemical reactions between the reactant gases occurring within the interior space of the plasma chamber;

a plasma generated within the plasma chamber;

a waveguide for directing energy towards the plasma generated within the plasma chamber; and

a plasma chamber outlet for carrying one or more first outlet gases from the plasma chamber; and

an ancillary reaction chamber that includes:

an ancillary reaction chamber inlet configured to obtain the first outlet gases from the plasma chamber and one or more gas flows, the first outlet gases from the plasma chamber and the one or more gas flows to form an ancillary reaction chamber inlet flow;

one or more ancillary reaction chamber walls that form an interior space of the ancillary reaction chamber, the ancillary reaction chamber inlet to provide the ancillary reaction chamber inlet flow to the interior space of ancillary reaction chamber where one or more second chemical reactions between the ancillary reaction chamber inlet flow are to occur within the interior space of the ancillary reaction chamber; and

an ancillary reaction chamber outlet for carrying one or more second outlet gases from the ancillary reaction chamber.

2 . The plasma reaction system of claim 1 , wherein a volume of the plasma chamber is less than a volume of the ancillary reaction chamber.

3 . The plasma reaction system of claim 1 , wherein the ancillary reaction chamber does not include a heat source, heat for the second chemical reactions occurring in the interior space of the ancillary reaction chamber being provided by residual heat corresponding to the first outlet gases.

4 . The plasma reaction system of claim 1 , wherein:

the plasma chamber walls are composed of a first material; and

the ancillary reaction chamber walls are composed of a second material.

5 . The plasma reaction system of claim 4 , wherein the first material, or the second material, or both the first material and the second material, are selected based, at least in part, on at least one of a coefficient of thermal expansion or a thermal resistance.

6 . The plasma reaction system of claim 4 , wherein:

the first material includes at least one of: quartz, boron nitride, aluminum, ceramic, silicon carbide, tungsten, and molybdenum; and

the second material includes at least one of: carbon steel, nickel alloy, aerospace-grade aluminum, titanium, ceramic, quartz, tungsten, and molybdenum.

7 . The plasma reaction system of claim 1 , wherein the ancillary reaction chamber further comprises one or more auxiliary chamber inlets, each of the auxiliary chamber inlets being configured to introduce to the ancillary reaction chamber at least one of: one or more of the reactant gases included in the plasma chamber inlet and a waste gas.

8 . The plasma reaction system of claim 1 , further comprising a second ancillary reaction chamber connected to the ancillary reaction chamber in series, the second ancillary reaction chamber being configured to obtain the second outlet gases from the ancillary reaction chamber and output one or more third outlet gases.

9 . The plasma reaction system of claim 1 , further comprising a second ancillary reaction chamber connected to the plasma chamber in parallel with the ancillary reaction chamber such that the first outlet gases from the plasma chamber are divided into a first parallel inlet stream directed towards the ancillary reaction chamber and a second parallel inlet stream directed towards the second ancillary reaction chamber.

10 . The plasma reaction system of claim 9 , wherein the first parallel inlet stream includes a greater flowrate than the second parallel inlet stream.

11 . The plasma reaction system of claim 1 , wherein the second outlet gases from the ancillary reaction chamber are directed towards one or more ancillary reactor units for processing of the second outlet gases.

12 . An ancillary reaction chamber, comprising:

an ancillary reaction chamber inlet configured to obtain one or more gases output by a plasma chamber;

one or more auxiliary chamber inlets, each of the one or more auxiliary chamber inlets being configured to introduce to the ancillary reaction chamber at least one of: one or more reactant gases input into the plasma chamber, or a waste gas, at least one of the one or more auxiliary chamber inlets being configured to directly introduce an oxidizer gas to the ancillary reaction chamber, an ancillary reaction chamber inlet flow being formed from a gas output by the plasma chamber and any gas from the one or more auxiliary chamber inlets;

one or more ancillary reaction chamber walls that form an interior space of the ancillary reaction chamber, one or more chemical reactions using the ancillary reaction chamber inlet flow occurring within the interior space of the ancillary reaction chamber; and

an ancillary reaction chamber outlet for carrying one or more outlet gases from the ancillary reaction chamber.

13 . The ancillary reaction chamber of claim 12 , further comprising a second ancillary reaction chamber connected to the ancillary reaction chamber in series, the second ancillary reaction chamber being configured to obtain the outlet gases from the ancillary reaction chamber and output one or more second outlet gases.

14 . The ancillary reaction chamber of claim 12 , further comprising a second ancillary reaction chamber connected to the plasma chamber in parallel with the ancillary reaction chamber such that the outlet gases from the plasma chamber are divided into a first parallel inlet stream directed towards the ancillary reaction chamber and a second parallel inlet stream directed towards the second ancillary reaction chamber.

15 . The ancillary reaction chamber of claim 12 , wherein the ancillary reaction chamber does not include a heat source, heat for the chemical reactions occurring in the interior space of the ancillary reaction chamber being provided by residual heat corresponding to the gases output by the plasma chamber.

16 . A method, comprising:

obtaining, by an ancillary reaction chamber, an ancillary reaction chamber inlet flow formed from one or more gases output by a plasma chamber and one or more gas flows;

affecting a chemical reaction between the ancillary reaction chamber inlet flow using residual heat from a plasma generated in the plasma chamber and an oxidizer gas that is provided directly to the ancillary reaction chamber; and

outputting one or more product gases yielded by the chemical reaction.

17 . The method of claim 16 , wherein the chemical reaction includes at least one of: a natural gas reformation reaction, a hydrocarbon generation reaction, a partial oxidation reaction, and a combustion reaction.

18 . The method of claim 16 , wherein the product gases yielded by the chemical reaction are directed towards one or more ancillary reactor units for processing of the product gases.

19 . The method of claim 16 , wherein obtaining, by the ancillary reaction chamber, the gases output by the plasma chamber includes mixing the gases with one or more residual gases and obtaining a mixture of the gases output by the plasma chamber and the residual gases, the residual gases including at least one of: unreacted reactant gases from the plasma chamber, a waste gas, or an oxidizer gas.

20 . The method of claim 16 , further comprising:

obtaining, by a second ancillary reaction chamber connected to the ancillary reaction chamber, the product gases yielded by the chemical reaction;

affecting a second chemical reaction between the product gases using residual heat from the ancillary reaction chamber and the plasma generated in the plasma chamber; and

outputting one or more second product gases yielded by the second chemical reaction.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 2, 2023
From: REHAGEN, JOHN JOSEPH
To: RECARBON, INC.
Reel/Frame 064476/0269 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 14, 2022
From: LEONARD, GEORGE STEPHEN, III; MCCLELLAND, STEFAN ANDREW; KOO, JAE MO
To: RECARBON, INC.
Reel/Frame 059255/0478 →
Continuity (2)
Provisional Application 63160300 · Mar 12, 2021
Related Publication 20220293400A1 · Sep 15, 2022
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