Granted Patent B2

US 12,507,019 · App. 17/338,833 · Granted Dec 23, 2025

Inventors: Pranav Gupta (Atlanta, GA); Farrokh Ayazi (Atlanta, GA)

Assignee: Georgia Tech Research Corporation

H04R19/04G01P15/0802H04R1/04H04R1/326H04R1/46H04R3/00G01P2015/0808G01P2015/084G01P2015/0871G01P15/125G01P15/18H04R2201/003

Abstract

Claims (102)

1 . A multi-axis device comprising:

a proof-mass;

a contiguous hinge-frame encircling the proof-mass, the contiguous hinge-frame designed to displace to a greater extent than, and in the same direction of, the proof-mass upon an externally applied acceleration;

a substrate;

a support system comprising a set of torsional support systems, the support system:

supporting the proof-mass to the contiguous hinge-frame (i) with the set of torsional support systems while inhibiting either cantilever motion or rotational motion of the proof-mass and (ii) in such a way that, upon the device experiencing the externally applied acceleration, the proof-mass is configured to undergo translational motion across all axes; and

supporting the contiguous hinge-frame to the substrate; and

a sensing electrode separated from the proof-mass by an out-of-plane sensing gap;

wherein, upon the device experiencing the externally applied acceleration, the proof-mass undergoes translational motion in an out-of-plane direction changing a size of the sensing gap, while a first set of opposing edges of the contiguous hinge-frame displace greater than the proof-mass in the out-of-plane direction resultant from the translational motion of the proof-mass; and

wherein the proof-mass, contiguous hinge-frame, and support system are each formed in the same single layer.

2 . The device of claim 1 ,

wherein the support system comprises a set of hybrid flexure systems;

wherein the contiguous hinge-frame supports the proof-mass with the set of hybrid flexure systems;

wherein upon the device experiencing the externally applied acceleration, the proof-mass undergoes translational motion only, in an out-of-plane direction, which changes the size of the sensing gap, while a first set of opposing edges of the hinge-frame displace greater than the proof-mass displaces resultant from the translational motion of the proof-mass;

wherein each edge of a second set of opposing edges of the contiguous hinge-frame comprises one of the hybrid flexure systems of the set of hybrid flexure systems; and

wherein a stiffness of the contiguous hinge-frame and hybrid flexure system is tunable to provide resonant modes of the device apart from a fundamental mode of operation of the device.

3 . The device of claim 1 , and

wherein upon the device experiencing the externally applied acceleration, the proof-mass undergoes only linear motion in an out-of-plane direction or an in-plane direction, changing the size of the out-of-plane sensing gap.

4 . A multi-axis device comprising:

a proof-mass;

a contiguous hinge-frame encircling the proof-mass, the contiguous hinge-frame designed to displace to a greater extent than, and in the same direction of, the proof-mass upon an externally applied acceleration;

a substrate;

a support system comprising a set of torsional support systems, the support system:

supporting the proof-mass and configured to inhibit cantilever motion and rotational motion of the proof-mass; and

supporting the contiguous hinge-frame to the substrate; and

a sensing electrode separated from the proof-mass by an out-of-plane sensing gap;

wherein the proof-mass, contiguous hinge-frame, and support system are each formed in the same single layer; and

wherein, upon the device experiencing the externally applied acceleration, the proof-mass undergoes translational motion in an out-of-plane direction or an in-plane direction, changing the size of the out-of-plane sensing gap, while a first set of opposing edges of the hinge-frame displace greater than the proof-mass in the out-of-plane direction resultant from the translational motion of the proof-mass.

5 . The device of claim 4 , and wherein upon the device experiencing the externally applied acceleration, the proof-mass undergoes motion in an out-of-plane direction or an in-plane direction, changing the size of the out-of-plane sensing gap.

6 . The device of claim 5 , wherein the device is a multi-directional contact microphone; and wherein one or more: the proof-mass, the contiguous hinge-frame, the sensing electrode, and the out-of-plane sensing gap are enclosed within a casing configured to maintain a sub-atmospheric pressure; the multi-directional contact microphone has a constant-gain has a constant-gain frequency spectrum ranging from DC to greater than 10 kHz in at least one direction; the out-of-plane sensing gap is approximately 500 nanometers or less; an out-of-plane resolution of the multi-directional contact microphone is better than 10 micro-gravity per root Hz; and an integrated root mean square (rms) noise of the multi-directional contact microphone in a 10 kHz bandwidth is smaller than 0.1 percent of gravity level (g).

7 . The device of claim 4 , and wherein upon the device experiencing the externally applied acceleration, the proof-mass undergoes translational motion in an out-of-plane direction, changing the size of the out-of-plane sensing gap.

8 . The device of claim 7 , wherein the device is an accelerometer contact microphone (ACM); wherein the contiguous hinge-frame supports the proof-mass with the support system comprising a set of torsional support systems; and wherein upon the ACM experiencing the externally applied acceleration, a first set of opposing edges of the contiguous hinge-frame displace greater than the proof-mass displaces resultant from the translational motion of the proof-mass.

9 . The device of claim 8 , wherein each edge of a second set of opposing edges of the contiguous hinge-frame comprises one of the torsional support systems of the set of torsional support systems; wherein each torsional support system comprises: a center support; and torsional beam flexures; and wherein upon the ACM experiencing the externally applied acceleration, the first set of opposing edges of the contiguous hinge-frame displace greater than the proof-mass displaces resultant from the translational motion of the proof-mass via torsion of at least one of the torsional beam flexures about the center support.

10 . The device of claim 8 , wherein one or more:

the proof-mass, the contiguous hinge-frame, the sensing electrode, and the out-of-plane sensing gap are enclosed within a casing configured to maintain a sub-atmospheric pressure;

the proof-mass, the contiguous hinge-frame, the sensing electrode, and the out-of-plane sensing gap are enclosed within a casing configured to maintain a vacuum pressure of 1-10 Torr;

the ACM has a constant-gain frequency spectrum ranging from DC to greater than 10 kHz;

the ACM has an operational bandwidth determined by the resonant frequency of the ACM;

the ACM has an operational bandwidth determined by the resonant frequency of the ACM, and wherein the resonant frequency of the ACM is approximately 14.3 kHz;

the ACM has an operational bandwidth determined by the resonant frequency of the ACM, and wherein the resonant frequency of the ACM is tunable;

the out-of-plane sensing gap is approximately 250 nanometers or less;

an out-of-plane resolution of the ACM is better than 10 micro-gravity per root Hz; and

an integrated root mean square (rms) noise of the ACM in a 10 kHz bandwidth is smaller than 0.1 percent of gravity level (g).

11 . The device of claim 8 further comprising at least one damping electrode and shock-stop feature in proximity to each edge of the first set of opposing edges of the contiguous hinge-frame.

12 . The device of claim 7 , wherein the device is an ACM;

wherein the contiguous hinge-frame supports the proof-mass with the support system comprising a set of hybrid flexure systems;

wherein upon the ACM experiencing the externally applied acceleration, a first set of opposing edges of the hinge-frame displace greater than the proof-mass displaces resultant from the translational motion of the proof-mass;

wherein each edge of a second set of opposing edges of the contiguous hinge-frame comprises one of the hybrid flexure systems of the set of hybrid flexure systems; and

wherein a stiffness of the contiguous hinge-frame and hybrid flexure system is tunable to provide resonant modes of the ACM apart from a fundamental mode of operation of the ACM.

13 . The device of claim 12 , wherein one or more:

the stiffness of the contiguous hinge-frame and hybrid flexure system is tunable to limit sensitivity of the ACM to externally applied in-plane and angular accelerations;

the stiffness of the contiguous hinge-frame and hybrid flexure system is tunable to limit sensitivity of the ACM to only out-of-plane accelerations, being orthogonal to the plane; and

each hybrid flexure system comprises:

a center support; and

torsional beam flexures; and

wherein upon the ACM experiencing the externally applied acceleration, the first set of opposing edges of the contiguous hinge-frame displace greater than the proof-mass displaces resultant from the translational motion of the proof-mass via torsion of at least two of the torsional beam flexures about the center support.

14 . The device of claim 12 further comprising at least one damping electrode and shock-stop feature in proximity to each edge of the first set of opposing edges of the contiguous hinge-frame.

15 . The device of claim 12 further comprising: damping electrodes; and

shock-stop features;

wherein each edge of the first set of opposing edges of the contiguous hinge-frame comprises the damping electrodes and shock-stop features in an alternating configuration along a length of each edge; and

wherein the damping electrodes are alternatingly fixed to the contiguous hinge-frame and fixed to the substrate along the length of each edge.

16 . The device of claim 4 , wherein the device is a microelectromechanical system (MEMS) device; wherein the sensing gap is approximately 1000 nanometers or less; and wherein the MEMS device has a constant-gain operational bandwidth ranging from 0 Hz to at least greater than 10 kHz.

17 . The device of claim 16 , wherein the proof-mass, the contiguous hinge-frame, the sensing electrode, and the sensing gap are enclosed within a casing configured to maintain a sub-atmospheric pressure; wherein the proof-mass, the contiguous hinge-frame, the sensing electrode, and the sensing gap are enclosed within a casing configured to maintain a vacuum pressure of 1-10 Torr;

wherein a first resonant frequency of the MEMS device is greater than 10 kHz;

wherein upon the MEMS device experiencing the externally applied acceleration, the proof-mass has a uniform translational displacement in an out-of-plane direction, while opposing edges of the contiguous hinge-frame are displaced greater than the displacement of the proof-mass; and

wherein shock-stop features are located in proximity to the opposing edges of the contiguous hinge-frame, wherein upon the MEMS device experiencing the externally applied acceleration, the proof-mass has a uniform translational displacement in an out-of-plane direction, while the shock-stop features are displaced greater than the displacement of the proof-mass.

18 . The device of claim 16 further comprising shock-stop features located in proximity to opposing edges of the contiguous hinge-frame; wherein the proof-mass, the frame, the sensing electrode, and the sensing gap are enclosed within a casing configured to maintain a sub-atmospheric pressure; wherein upon the MEMs device experiencing the externally applied acceleration, the proof-mass has a uniform translational displacement in an out-of-plane direction: while opposing edges of the contiguous hinge-frame are displaced greater than the displacement of the proof-mass; and while the shock-stop features are displaced greater than the displacement of the proof-mass; and wherein a first resonant frequency of the MEMs device is greater than 10 kHz.

19 . A multi-axis microelectromechanical system (MEMS) device comprising:

a proof-mass;

sensing electrodes, each sensing electrode separated from the proof-mass by a sensing gap;

a contiguous hinge-frame encircling the proof-mass and supporting the proof-mass with a support system, the contiguous hinge-frame configured to, upon the MEMS device experiencing an externally applied acceleration:

displace to a greater extent than, and in a same direction of, the proof-mass, thereby changing a size of the sensing gap in the same direction while a first set of opposing edges of the contiguous hinge-frame displace greater than the proof-mass in the same direction resultant from translational motion of the proof-mass resultant from the externally applied acceleration;

enable the proof-mass to undergo translational motion across all axes;

inhibit the proof-mass from undergoing cantilever motion; and

inhibit the proof-mass from undergoing rotational motion; and

a substrate;

wherein the support system supports the contiguous hinge-frame to the substrate; and

wherein the proof-mass, contiguous hinge-frame, and support system are each formed in the same single layer.

20 . The MEMS device of claim 19 , wherein the proof-mass includes one or more sets of apertures;

wherein each aperture of the proof-mass has positioned therein one sensing electrode of the sensing electrodes;

wherein each sensing gap is approximately 1000 nanometers or less; and

wherein the MEMS device has a constant-gain operational bandwidth ranging from 0 Hz to at least greater than 10 kHz.

21 . The MEMS device of claim 20 , wherein each sensing gap is the same size, being uniformly sized among each sensing electrode and the proof-mass.

22 . The MEMS device of claim 20 , wherein at least two of the sensing gaps is a different size one from the other.

23 . The MEMS device of claim 20 , wherein each of the one or more sets of apertures includes a first aperture located a distance from the center of the proof-mass, and a second aperture located the same distance from the center of the proof-mass as the first aperture, but point reflected about the center of the proof-mass from the first aperture; and wherein the symmetrically-reflected locations of the sensing electrodes positioned in each set of apertures cancel the effect of angular accelerations of the MEMS device.

24 . The MEMS device of claim 19 further comprising: damping electrodes; and shock-stop features;

wherein the support system is a hybrid flexure system comprising torsional beam flexures;

wherein the contiguous hinge-frame is a center-supported hinge-frame that supports the proof-mass using the torsional beam flexures;

wherein each sensing gap is a transduction out-of-plane gap having a single transduction out-of-plane gap size;

wherein upon the MEMS device experiencing the externally applied acceleration, the proof-mass undergoes translational motion in an out-of-plane direction, while the center-supported hinge-frame rotates about the center support so a first set of opposing edges of the center-supported hinge-frame are displaced greater than the displacement of the proof-mass;

wherein each edge of the first set of opposing edges comprises a portion of the damping electrodes and shock-stop features; and

wherein the hybrid flexure system enables implementation of the damping electrodes and shock-stop features in the MEMS device that uses the same single transduction out-of-plane gap size.

25 . The MEMS device of claim 19 , wherein the proof-mass has at least three sets of a pair of apertures, an X-mode set of a first aperture and a second aperture, a Y-mode set of a first aperture and a second aperture, and a Z-mode set of a first aperture and a second aperture;

wherein the sensing electrodes comprise at least three sets of a pair of sensing electrodes, an X-mode set of a first sensing electrode and a second sensing electrode, a Y-mode set of a first sensing electrode and a second sensing electrode, and a Z-mode set of a first sensing electrode and a second sensing electrode;

wherein in each corresponding set of apertures and sensing electrodes:

the first aperture is located a distance from the center of the proof-mass, and the second aperture is located the same distance from the center of the proof-mass as the first aperture, but point reflected about the center of the proof-mass from the first aperture;

the first sensing electrode is positioned in the first aperture;

the second sensing electrode is positioned in the second aperture; and

symmetrically-reflected locations of the first and second sensing electrodes cancel an effect of angular accelerations of the MEMS device;

wherein each sensing gap is approximately 1000 nanometers or less; and

wherein the MEMS device has a constant-gain operational bandwidth ranging from 0 Hz to at least greater than 10 kHz.

26 . The MEMS device of claim 25 , wherein all resonant frequencies of the MEMS device are greater than 10 kHz.

Assignments (1)

Continuity (2)

References Cited (26)