Semiconductor device and method for fabricating the same
A semiconductor device may include: a first conductive line; a second conductive line disposed over the first conductive line to be spaced apart from the first conductive line; a variable resistance layer disposed over the first conductive line and below the second conductive line; at least one of a first dielectric layer or a second dielectric layer; at least one of a first contact or a second contact; and at least one of a first doped selector layer or a second doped selector layer.
1 . A semiconductor device comprising:
a first conductive line;
a second conductive line disposed over the first conductive line to be spaced apart from the first conductive line;
a variable resistance layer disposed over the first conductive line and below the second conductive line;
at least one of a first dielectric layer or a second dielectric layer, wherein the first dielectric layer includes a first through-hole disposed between the first conductive line and the variable resistance layer and the second dielectric layer includes a second through-hole disposed between the variable resistance layer and the second conductive line;
at least one of a first contact or a second contact, wherein the first contact is structured to include a conductive material filled with the first through-hole and includes a first contact portion and a second contact portion spaced apart from each other, and the second contact is structured to include a conductive material filled with the second through-hole, and includes a third contact portion and a fourth contact portion spaced apart from each other; and
at least one of a first doped selector layer or a second doped selector layer, wherein the first doped selector layer includes a first selection element portion interposed between the first contact portion and the second contact portion and a second selection element portion disposed in the first dielectric layer to be spaced apart from an upper surface of the first dielectric layer and a lower surface of the first dielectric layer, and the second doped selector layer includes a third selection element portion interposed between the third contact portion and the fourth contact portion and a fourth selection element portion disposed in the second dielectric layer to be spaced apart from an upper surface of the second dielectric layer and a lower surface of the second dielectric layer.
2 . The semiconductor device according to claim 1 , wherein each of the first and the second doped selector layers includes a dielectric material and a dopant.
3 . The electronic device according to claim 2 , wherein the dopant includes one or more of boron (B), nitrogen (N), carbon (C), phosphorous (P), arsenic (As), aluminum (Al), silicon (Si) and germanium (Ge).
4 . The semiconductor device according to claim 1 , wherein the first portion and the second portion of the first doped selector layer include different dielectric materials from each other.
5 . The semiconductor device according to claim 1 , wherein the third selection element portion and the fourth selection element portion of the second doped selector layer include different dielectric materials from each other.
6 . The semiconductor device according to claim 1 , wherein the first selection element portion and the third selection element portion include the same dielectric material and dopant as each other.
7 . The semiconductor device according to claim 1 , wherein the second selection element portion and the fourth selection element portion include the same dielectric material and dopant as each other.
8 . The electronic device according to claim 1 , wherein the first contact, the second contact, the first selection element portion and the third selection element portion include tungsten (W), titanium (Ti), tantalum (Ta), vanadium (V), chromium (Cr), platinum (Pt), aluminum (Al), copper (Cu), copper (Cu), zinc (Zn), nickel (Ni), cobalt (Co), lead (Pb), manganese (Mn), niobium (Nb), tungsten nitride (WN), tungsten silicide (WSi), titanium nitride (TiN), titanium silicon nitride (TiSiN), titanium aluminum nitride (TiAlN), tantalum nitride (TaN), tantalum silicon nitride (TaSiN), or tantalum aluminum nitride (TaAlN), or a combination of two or more of tungsten (W), titanium (Ti), tantalum (Ta), vanadium (V), chromium (Cr), platinum (Pt), aluminum (Al), copper (Cu), copper (Cu), zinc (Zn), nickel (Ni), cobalt (Co), lead (Pb), manganese (Mn), niobium (Nb), tungsten nitride (WN), tungsten silicide (WSi), titanium nitride (TiN), titanium silicon nitride (TiSiN), titanium aluminum nitride (TiAlN), tantalum nitride (TaN), tantalum silicon nitride (TaSiN), or tantalum aluminum nitride (TaAlN), respectively.
9 . The electronic device according to claim 1 , wherein a distance from the upper surfaces of the first dielectric layer and the first contact to an upper surface of the first doped selector layer and a distance from the lower surfaces of the first dielectric layer and the first contact to a lower surface of the first doped selector layer are the same as each other, or different from each other.
10 . The electronic device according to claim 1 , wherein a distance from the upper surfaces of the second dielectric layer and the second contact to an upper surface of the second doped selector layer and a distance from the lower surfaces of the second dielectric layer and the second contact to a lower surface of the second doped selector layer are the same as each other, or different from each other.
11 . A method for fabricating a semiconductor device comprising:
forming a first conductive line over a substrate;
forming a variable resistance layer over the first conductive line;
forming a second conductive line over the variable resistance layer;
forming a first dielectric layer including a through-hole between the first line and the variable resistance layer, between the variable resistance layer and the second conductive line, or both between the first line and the variable resistance layer and between the variable resistance layer and the second conductive line;
forming a contact in the through-hole;
performing a first ion implantation process to form a first sub dielectric layer within the contact and a second sub dielectric layer within the first dielectric layer such that the first sub dielectric layer is spaced apart from an upper surface and a lower surface of the contact and the second sub dielectric layer is spaced apart from an upper surface and a lower surface of the first dielectric layer by converting a portion of the contact into the first sub dielectric layer and a portion of the first dielectric layer into the second sub dielectric layer; and
performing a second ion implantation of a dopant into the first sub dielectric layer and the second sub dielectric layer to form a doped selector layer,
wherein the doped selector layer includes a first portion including the first sub dielectric layer and the dopant and a second portion including the second sub dielectric layer and the dopant.
12 . The method according to claim 11 , wherein the contact includes a material capable of forming a dielectric material by using oxygen, nitrogen, or a combination of oxygen and nitrogen through the first ion implantation process.
13 . The method according to claim 11 , wherein the dopant doped by the second ion implantation process includes one or more of boron (B), nitrogen (N), carbon (C), phosphorous (P), arsenic (As), aluminum (Al), silicon (Si) and germanium (Ge).
14 . The method according to claim 11 , wherein the doped selector layer includes a dielectric material and the dopant.
15 . The method according to claim 11 , wherein the first sub dielectric layer and the second sub dielectric layer include different dielectric materials from each other.
16 . The method according to claim 11 , wherein the first dielectric layer and the second sub dielectric layer include the same dielectric material as each other, or different dielectric materials from each other.
17 . The method according to claim 11 , wherein the doped selector layer includes a first doped selector layer formed between the first conductive line and the variable resistance layer and a second doped selector layer formed between the variable resistance layer and the second conductive line, and
the first portion of the first doped selector layer and the first portion of the second doped selector layer include the same material as each other, and the second portion of the first doped selector layer and the second portion of the second doped selector layer include the same material as each other.
18 . The method according to claim 11 , wherein the contact and the first portion of the doped selector layer include tungsten (W), titanium (Ti), tantalum (Ta), vanadium (V), chromium (Cr), platinum (Pt), aluminum (Al), copper (Cu), copper (Cu), zinc (Zn), nickel (Ni), cobalt (Co), lead (Pb), manganese (Mn), niobium (Nb), tungsten nitride (WN), tungsten silicide (WSi), titanium nitride (TiN), titanium silicon nitride (TiSiN), titanium aluminum nitride (TiAlN), tantalum nitride (TaN), tantalum silicon nitride (TaSiN), or tantalum aluminum nitride (TaAlN), or a combination of two or more of tungsten (W), titanium (Ti), tantalum (Ta), vanadium (V), chromium (Cr), platinum (Pt), aluminum (Al), copper (Cu), copper (Cu), zinc (Zn), nickel (Ni), cobalt (Co), lead (Pb), manganese (Mn), niobium (Nb), tungsten nitride (WN), tungsten silicide (WSi), titanium nitride (TiN), titanium silicon nitride (TiSiN), titanium aluminum nitride (TiAlN), tantalum nitride (TaN), tantalum silicon nitride (TaSiN), or tantalum aluminum nitride (TaAlN).
19 . The method according to claim 11 , wherein a distance from upper surfaces of the first dielectric layer and the contact to an upper surface of the doped selector layer and a distance from lower surfaces of the first dielectric layer and the contact to a lower surface of the doped selector layer are the same as each other, or different from each other.