Substrate treating apparatus and substrate support unit
The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a process chamber configured to form a treatment space, a gas supply unit configured to supply a process gas into an interior of the process chamber, a plasma generating unit configured to generate plasma from the process gas introduced into the interior of the process chamber, and a substrate support unit provided in the treatment space and configured to support a substrate, the substrate support unit may include a first plate, and a second plate that is adjacent to the first plate, and a gap may be formed between the first plate and the second plate, and a supply pipe is configured to supply a gas into the space defined by the gap.
1 . A substrate treating apparatus comprising: a process chamber configured to form a treatment space; a gas supply unit configured to supply a process gas into an interior of the process chamber; a plasma generating unit configured to generate plasma from the process gas introduced into the interior of the process chamber; a substrate support unit provided in the treatment space and configured to support a substrate, wherein the substrate support unit includes: a first plate; a second plate that is adjacent to the first plate, wherein a first gap is formed between the first plate and the second plate; a supply pipe configured to supply a gas into a space defined by the first gap, wherein the supply pipe penetrates the second plate and an upper end of the supply pipe is exposed to the first gap; and a base plate located under the second plate and having an interior space where a lifting module that moves the substrate to the substrate support unit is located, wherein a second gap is formed between a lower surface of the second plate and an upper surface of the base plate, wherein the supply pipe includes: a side surface having a first partial area that is exposed to the second gap and a second partial area that is exposed to the interior space; an inner space surrounded by the side surface; at least one first distribution hole formed at the upper end of the supply pipe; at least one second distribution hole formed at the first partial area of the side surface of the supply pipe; and at least one third distribution hole formed at the second partial area of the side surface of the supply pipe, wherein the inner space connects the at least one first distribution hole, at least one second distribution hole and at least one third distribution hole, and wherein the first plate includes: a dielectric plate in which an electrostatic electrode is embedded and is configured to suction the supported substrate with an electrostatic force; and an electrode plate provided under the dielectric plate and configured to receive electric power for generating the plasma; a supply passage connected to a heat transfer medium storage and passing through the dielectric plate so that an upper end of the supply passage is exposed at an upper surface of the dielectric plate; a first circulation passage disposed in the electrode plate and connected to the supply passage, wherein the supply passage is connected to the heat transfer medium storage via the first circulation passage; and a second circulation passage disposed in the electrode plate and circulating a coolant, wherein the gas is dry air or an inert gas which has lower humidity than an air in a clean room where the substrate treating apparatus is installed, wherein a heat transfer medium supplied from the heat transfer medium storage is supplied toward a bottom surface of the supported substrate via the supply passage, wherein the supply pipe penetrates an upper wall of the base plate and the second gap, wherein the at least one second distribution hole is fluidly connected to the second gap, and the at least one third distribution hole is fluidly connected to the interior space, and wherein the supply pipe further supplies the gas to the second gap and the interior space.
2 . The substrate treating apparatus of claim 1 , wherein the second plate is an insulator plate provided under the first plate.
3 . The substrate treating apparatus of claim 2 , wherein the first gap is formed between an upper surface of the insulator plate and a lower surface of the electrode plate.
4 . The substrate treating apparatus of claim 3 , wherein the first gap is defined by a first recess formed at the upper surface of the insulator plate, and wherein a maximum width of the first recess is the same as or larger than a diameter of an upper surface of the substrate support unit when the first recess is viewed from above.
5 . The substrate treating apparatus of claim 4 , wherein the second gap is defined by a second recess formed at the lower surface of the insulator plate.
6 . The substrate treating apparatus of claim 1 , wherein the substrate treating apparatus treats the substrate by using extremely low temperature plasma.
7 . A substrate support unit for supporting a substrate, the substrate support unit comprising: an upper plate; a lower plate provided under the upper plate; a base plate located under the lower plate and having an interior space where a lifting module that moves the substrate to the substrate support unit is located, wherein the upper plate includes: a dielectric plate in which an electrostatic electrode is embedded and is configured to suction the supported substrate with an electrostatic force; and an electrode plate provided under the dielectric plate and configured to receive electric power for generating a plasma, and wherein the lower plate is an insulator plate, wherein a first gap is formed between an upper surface of the insulator plate and a lower surface of the electrode plate, wherein a second gap is formed between a lower surface of the insulator plate and an upper surface of the base plate, wherein the substrate support unit further includes a supply pipe configured to supply a gas into the interior space and spaces formed by the first and second gaps while passing through the lower plate and the second gap, and wherein the supply pipe includes: an upper end exposed to the first gap; a side surface having a first partial area that is exposed to the second gap and a second partial area that is exposed to the interior space; an inner space surrounded by the side surface; at least one first distribution hole formed at the upper end of the supply pipe; at least one second distribution hole formed at the first partial area of the side surface of the supply pipe; and at least one third distribution hole formed at the second partial area of the side surface of the supply pipe, wherein the inner space connects the at least one first distribution hole, at least one second distribution hole and at least one third distribution hole; a supply passage connected to a heat transfer medium storage and passing through the dielectric plate so that an upper end of the supply passage is exposed at an upper surface of the dielectric plate; a first circulation passage disposed in the electrode plate and connected to the supply passage, wherein the supply passage is connected to the heat transfer medium storage via the first circulation passage; and a second circulation passage disposed in the electrode plate and circulating a coolant, wherein the supply pipe penetrates an upper wall of the base plate and the second gap, wherein the at least one second distribution hole is fluidly connected to the second gap, and the at least one third distribution hole is fluidly connected to the interior space, and wherein the supply pipe further supplies the gas to the second gap and the interior space.
8 . The substrate support unit of claim 7 , wherein the first gap is defined by a first recess formed at the upper surface of the insulator plate.
9 . The substrate support unit of claim 8 , wherein the second gap is defined by a second recess formed at the lower surface of the insulator plate.
10 . A substrate treating apparatus for treating a substrate by using plasma, the apparatus comprising: a process chamber configured to form a treatment space; a gas supply unit configured to supply a process gas into an interior of the process chamber; a plasma generating unit configured to generate plasma from the process gas introduced into the interior of the process chamber; and a substrate support unit provided in the treatment space and configured to support the substrate, wherein the substrate support unit includes: a dielectric plate in which an electrostatic electrode is embedded and is configured to suction the substrate; an electrode plate provided under the dielectric plate; an annular focus ring provided at a circumference of the dielectric plate; an insulator plate provided under the electrode plate and formed of an insulator; a base plate provided under the insulator plate and grounded, wherein the base plate has an interior space where a lifting module that moves the substrate to the substrate support unit is located; a first gap formed between the electrode plate and the insulator plate; a second gap formed between the insulator plate and the base plate; a supply pipe connecting the first gap to the second gap and configured to supply a dry air or an inert gas to the first and second gaps, wherein the dry air or the inert gas has lower humidity than an air in a clean room where the substrate treating apparatus is installed; a supply passage connected to a heat transfer medium storage and passing through the dielectric plate so that an upper end of the supply passage is exposed at an upper surface of the dielectric plate; a first circulation passage disposed in the electrode plate and connected to the supply passage, wherein the supply passage is connected to the heat transfer medium storage via the first circulation passage; and a second circulation passage disposed in the electrode plate and circulating a coolant, wherein the supply pipe includes: an upper end exposed to the first gap; a side surface having a first partial area that is exposed to the second gap and a second partial area that is exposed to the interior space; an inner space surrounded by the side surface; at least one first distribution hole formed at the upper end of the supply pipe; at least one second distribution hole formed at the partial area of the side surface of the supply pipe; and at least one third distribution hole formed at the second partial area of the side surface of the supply pipe, wherein the inner space connects the at least one first distribution hole, at least one second distribution hole and at least one third distribution hole, wherein a heat transfer medium supplied from the heat transfer medium storage is supplied toward a bottom surface of the supported substrate via the supply passage, wherein the supply pipe penetrates an upper wall of the base plate and the second gap, wherein the at least one second distribution hole is fluidly connected to the second gap, and the at least one third distribution hole is fluidly connected to the interior space, and wherein the supply pipe further supplies the dry air or the inert gas to the second gap and the interior space.
11 . The substrate treating apparatus of claim 10 , wherein the first gap and the second gap are connected with each other via the at least one first distribution hole and the at least one second distribution hole of the supply pipe.