Method of forming semiconductor device comprising conductive feature, dielectric layer adjacent conductive feature, and etch stop layer on top surface of dielectric layer
A semiconductor device includes a first conductive feature, a second conductive feature, and a first dielectric layer positioned between the first conductive feature and the second conductive feature. An etch stop layer is over the first dielectric layer. A cap layer is over the first conductive feature, the second conductive feature, and the etch stop layer.
1 . A method of forming a semiconductor device, comprising:
forming a first conductive feature;
forming a first dielectric layer adjacent the first conductive feature;
selectively forming a blocking layer on a top surface of the first conductive feature;
forming an etch stop layer on a top surface of the first dielectric layer while the blocking layer is positioned on the top surface of the first conductive feature;
removing the blocking layer; and
forming a second dielectric layer over the etch stop layer and the first conductive feature after removing the blocking layer.
2 . The method of claim 1 , wherein the top surface of the first dielectric layer remains exposed after forming the blocking layer.
3 . The method of claim 1 , comprising:
forming a contact extending through at least a portion of the second dielectric layer.
4 . The method of claim 1 , comprising:
forming an encapsulation layer adjacent the first conductive feature before forming the first dielectric layer, wherein forming the first dielectric layer comprises forming the first dielectric layer over the encapsulation layer.
5 . The method of claim 1 , wherein an airgap is defined in the first dielectric layer.
6 . The method of claim 1 , comprising:
forming an encapsulation layer over the first conductive feature and contacting a sidewall of the first conductive feature.
7 . The method of claim 6 , comprising:
removing a first portion of the encapsulation layer over the first conductive feature after forming the first dielectric layer.
8 . The method of claim 7 , wherein a top surface of a second portion of the encapsulation layer remains exposed after forming the blocking layer.
9 . The method of claim 1 , comprising:
forming a cap layer over the first conductive feature after removing the blocking layer and before forming the second dielectric layer.
10 . The method of claim 9 , wherein forming the cap layer comprises forming the cap layer over the etch stop layer.
11 . The method of claim 10 , wherein the cap layer contacts the top surface of the first conductive feature, a sidewall of the etch stop layer, and a top surface of the etch stop layer.
12 . A method of forming a semiconductor device, comprising:
forming a first conductive feature;
forming an encapsulation layer;
forming a first dielectric layer adjacent the first conductive feature after forming the encapsulation layer, wherein forming the first dielectric layer comprises forming the first dielectric layer such that the encapsulation layer is laterally between the first conductive feature and the first dielectric layer;
forming an etch stop layer on a top surface of the first dielectric layer, wherein the etch stop layer does not overlie the first conductive feature; and
forming a second dielectric layer over the etch stop layer and the first conductive feature.
13 . The method of claim 12 , comprising:
forming a cap layer over the first conductive feature and the etch stop layer.
14 . The method of claim 13 , wherein the cap layer contacts a top surface of the first conductive feature and a sidewall of the etch stop layer.
15 . The method of claim 12 , comprising:
removing a first portion of the encapsulation layer over the first conductive feature after forming the first dielectric layer.
16 . A method of forming a semiconductor device, comprising:
forming a first conductive feature;
forming a first dielectric layer adjacent the first conductive feature;
forming a blocking layer on a top surface of the first conductive feature;
forming an etch stop layer on a top surface of the first dielectric layer after forming the blocking layer;
forming a cap layer over the etch stop layer; and
forming a contact to contact a sidewall of the cap layer, a top surface of the etch stop layer, a sidewall of the etch stop layer; and the top surface of the first conductive feature.
17 . The method of claim 16 , comprising:
forming an encapsulation layer before forming the first dielectric layer, wherein the encapsulation layer separates the first conductive feature from the first dielectric layer.
18 . The method of claim 17 , wherein forming the etch stop layer comprises forming the etch stop layer on a top surface of the encapsulation layer.
19 . The method of claim 16 , wherein an airgap is defined in the first dielectric layer.
20 . The method of claim 16 , wherein forming the etch stop layer comprises forming the etch stop layer to contact a sidewall of the blocking layer.