Acoustic wave device
An acoustic wave device includes a support substrate, a first high acoustic velocity film on the support substrate, a low acoustic velocity film on the first high acoustic velocity film, a second high acoustic velocity film on the low acoustic velocity film, a piezoelectric layer on the second high acoustic velocity film, and an IDT on the piezoelectric layer. Bulk waves propagate in the low acoustic velocity film more slowly than bulk waves propagate in the piezoelectric layer, bulk waves propagate in the first high acoustic velocity film faster than acoustic waves propagate on the piezoelectric layer, and bulk waves propagate in the second high acoustic velocity film faster than or as fast as bulk waves propagate in the first high acoustic velocity film.
1 . An acoustic wave device comprising:
a support substrate;
a first high acoustic velocity film directly on the support substrate;
a low acoustic velocity film on the first high acoustic velocity film;
a second high acoustic velocity film on the low acoustic velocity film;
a piezoelectric layer on the second high acoustic velocity film; and
an IDT on the piezoelectric layer; wherein
an acoustic velocity of bulk waves that propagate through the low acoustic velocity film is lower than an acoustic velocity of bulk waves that propagate through the piezoelectric layer;
an acoustic velocity of bulk waves that propagate through the first high acoustic velocity film is higher than an acoustic velocity of acoustic waves that propagate through the piezoelectric layer;
an acoustic velocity of bulk waves that propagate through the second high acoustic velocity film is equal to or higher than an acoustic velocity of bulk waves that propagate through the first high acoustic velocity film; and
a thickness of the second high acoustic velocity film is different than a thickness of the first high acoustic velocity film.
2 . The acoustic wave device according to claim 1 , wherein a material of the second high acoustic velocity film is aluminum oxide, aluminum nitride, silicon nitride, titanium nitride, silicon carbide, or diamond-like carbon.
3 . The acoustic wave device according to claim 2 , wherein the material and the thickness of the second high acoustic velocity film are any of combinations listed in Table 1:
TABLE 1
Thickness T of the
Thickness T of the
Material of the second high
second high acoustic
second high acoustic
acoustic velocity film
velocity film (μm)
velocity film (λ)
Aluminum oxide (Al 2 O 3 )
0.001 ≤ T ≤ 1
0.0005 ≤ T ≤ 0.5
Aluminum nitride (AlN)
0.001 ≤ T ≤ 1
0.0005 ≤ T ≤ 0.5
Silicon nitride (SiN)
0.001 ≤ T ≤ 1
0.0005 ≤ T ≤ 0.5
Titanium nitride (TiN)
0.001 ≤ T ≤ 1
0.0005 ≤ T ≤ 0.5
Silicon carbide (SiC)
0.001 ≤ T ≤ 1
0.0005 ≤ T ≤ 0.5
Diamond-like carbon (DLC)
0.001 ≤ T ≤ 0.2
0.0005 ≤ T ≤ 0.1
4 . The acoustic wave device according to claim 1 , wherein the support substrate is a silicon substrate.
5 . The acoustic wave device according to claim 4 , wherein a surface of the support substrate closest to the first high acoustic velocity film is (111)-oriented.
6 . The acoustic wave device according to claim 1 , wherein a phase of a Rayleigh wave, which is defined by a second Euler angle θ of the piezoelectric layer, a thickness of the piezoelectric layer, and the thickness of the second high acoustic velocity film, is about −70 [deg] or less.
7 . The acoustic wave device according to claim 2 , wherein the support substrate is a silicon substrate.
8 . The acoustic wave device according to claim 7 , wherein a surface of the support substrate closest to the first high acoustic velocity film is (111)-oriented.
9 . The acoustic wave device according to claim 3 , wherein the support substrate is a silicon substrate.
10 . The acoustic wave device according to claim 9 , wherein a surface of the support substrate closest to the first high acoustic velocity film is (111)-oriented.
11 . The acoustic wave device according to claim 2 , wherein a phase of a Rayleigh wave, which is defined by a second Euler angle θ of the piezoelectric layer, a thickness of the piezoelectric layer, and the thickness of the second high acoustic velocity film, is about −70 [deg] or less.
12 . The acoustic wave device according to claim 3 , wherein a phase of a Rayleigh wave, which is defined by a second Euler angle θ of the piezoelectric layer, a thickness of the piezoelectric layer, and the thickness of the second high acoustic velocity film, is about −70 [deg] or less.
13 . The acoustic wave device according to claim 4 , wherein a phase of a Rayleigh wave, which is defined by a second Euler angle θ of the piezoelectric layer, a thickness of the piezoelectric layer, and the thickness of the second high acoustic velocity film, is about −70 [deg] or less.
14 . The acoustic wave device according to claim 5 , wherein a phase of a Rayleigh wave, which is defined by a second Euler angle θ of the piezoelectric layer, a thickness of the piezoelectric layer, and the thickness of the second high acoustic velocity film, is about −70 [deg] or less.