Photoelectric conversion device, photoelectric conversion system, moving body, and manufacturing method of photoelectric conversion device
A photoelectric conversion device having pixels lined up in a plurality of rows and a plurality of columns, the photoelectric conversion device including: a semiconductor layer which has a front surface and a rear surface and which includes an avalanche photodiode; a wiring layer arranged on a side of the front surface of the semiconductor layer; and a trench arranged in a boundary portion between two pixels, wherein the trench has at least any of a metal or a metal compound arranged therein and extends from inside of the semiconductor layer to inside of the wiring layer.
1 . A photoelectric conversion device having pixels lined up in a plurality of rows and a plurality of columns, the photoelectric conversion device comprising:
a semiconductor layer which has a front surface and a rear surface and which includes an avalanche photodiode;
a wiring layer arranged on a side of the front surface of the semiconductor layer; and
a trench arranged in a boundary portion between two pixels,
wherein the trench has at least any of a metal or a metal compound arranged therein and extends from inside of the semiconductor layer to inside of the wiring layer,
the trench is connected to a wiring in the wiring layer which, of wiring in the wiring layer, is nearest to the semiconductor layer,
the wiring layer has a first wiring and a second wiring,
a distance from the semiconductor layer to the second wiring is longer than a distance from the semiconductor layer to the first wiring,
the first wiring is arranged so as to overlap with a semiconductor region constituting a cathode of the avalanche photodiode in a plan view, and
the trench extends to the second wiring.
2 . The photoelectric conversion device according to claim 1 , wherein the trench is arranged so as to surround each pixel in a plan view.
3 . The photoelectric conversion device according to claim 1 , wherein the trench is not arranged in a diagonal portion of each pixel.
4 . The photoelectric conversion device according to claim 1 , wherein the trench at least extends to the rear surface of the semiconductor layer.
5 . The photoelectric conversion device according to claim 1 , wherein the photoelectric conversion device has an optical layer on a side of the rear surface of the semiconductor layer, and
the trench extends to inside of the optical layer.
6 . The photoelectric conversion device according to claim 5 , wherein the optical layer has a reflective plate, and
the trench extends to the reflective plate.
7 . The photoelectric conversion device according to claim 5 , wherein the optical layer has a reflective plate,
a second light-shielding wall is arranged between the reflective plate and the semiconductor layer, and
the trench extends to the second light-shielding wall.
8 . A photoelectric conversion system, comprising:
the photoelectric conversion device according to claim 1 ; and
a signal processing device configured to generate an image using a signal output by the photoelectric conversion device.
9 . A moving body, comprising:
the photoelectric conversion device according to claim 1 ,
wherein the moving body comprises a control device configured to control movement of the moving body using a signal output by the photoelectric conversion device.
10 . A photoelectric conversion device having pixels lined up in a plurality of rows and a plurality of columns, the photoelectric conversion device comprising:
a semiconductor layer which has a front surface and a rear surface and which includes an avalanche photodiode;
a wiring layer arranged on a side of the front surface of the semiconductor layer; and
a trench arranged in a boundary portion between two pixels,
wherein the trench has at least any of a metal or a metal compound arranged therein and extends from inside of the semiconductor layer to inside of the wiring layer,
the trench is connected to a wiring in the wiring layer which, of wiring in the wiring layer, is nearest to the semiconductor layer,
the photoelectric conversion device has an optical layer on a side of the rear surface of the semiconductor layer, and
the trench extends to inside of the optical layer.
11 . The photoelectric conversion device according to claim 10 , wherein the optical layer has a reflective plate, and
the trench extends to the reflective plate.
12 . The photoelectric conversion device according to claim 10 , wherein the optical layer has a reflective plate,
a second light-shielding wall is arranged between the reflective plate and the semiconductor layer, and
the trench extends to the second light-shielding wall.