Granted Patent B2

US 12,521,756 · App. 18/487,203 · Granted Jan 13, 2026

Inventors: Shailendra Vikram Singh (London, GB); Gianfranco Aresta (London, GB); Andrew Simon Hall Brooks (London, GB); Siobhan Marie Woollard (London, GB); Gareth Hennighan (London, GB)

B05D1/62B05D7/50C09D127/20C09D183/04H05K3/285B05D3/0486B05D2252/04B05D2451/00B05D2518/10H05K2201/0179H05K2201/09872H05K2203/095H05K2203/1322H05K2203/1338

Abstract

Claims (18)

1 . A method of depositing a protective coating onto a substrate, wherein the depositing the protective coating comprises:

depositing a first sub-layer prepared from a first precursor mixture of an organosilicon compound and no, or substantially no, O 2 , N 2 O or NO 2 , and comprises one of H 2 , NH 3 , N 2 , Ar, He and/or Kr; and

depositing one or more subsequent alternating layers of:

a first intermediate sub-layer which is a hydrocarbon polymer of formula C m H n prepared by plasma-deposition of a second precursor mixture comprising a hydrocarbon compound of formula (X), and optionally NH 3 , N 2 O, N 2 , NO 2 , CH 4 , C 2 H 6 , C 3 H 6 and C 3 H 8 , He, Ar and/or Kr;

the hydrocarbon compound of formula (X);

wherein:

Z 1 represents C 1 -C 3 alkyl or C 2 -C 3 alkenyl;

Z 2 represents hydrogen, C 1 -C 3 alkyl or C 2 -C 3 alkenyl;

Z 3 represents hydrogen, C 1 -C 3 alkyl or C 2 -C 3 alkenyl;

Z 4 represents hydrogen, C 1 -C 3 alkyl or C 2 -C 3 alkenyl;

Z 5 represents hydrogen, C 1 -C 3 alkyl or C 2 -C 3 alkenyl; and

Z 6 represents hydrogen, C 1 -C 3 alkyl or C 2 -C 3 alkenyl; and

a second intermediate sub-layer which is prepared by using a third precursor mixture of nitrogen-containing organosilicon compounds or an organosilicon with a nitrogen-containing co-precursor.

2 . The method according to claim 1 , wherein four to thirteen sub-layers are used.

3 . The method according to claim 1 , wherein the second precursor mixture contains two or more compounds of formula (X).

4 . The method according to claim 1 , wherein the third precursor mixture comprises compounds independently selected from the group consisting of hexamethyldisiloxane (HMDSO), tetramethyldisiloxane (TMDSO), 1,3-divinyltetramethyldisiloxane (DVTMDSO), hexavinyldisiloxane (HVDSO) allyltrimethylsilane, allyltrimethoxysilane (ATMOS), tetraethylorthosilicate (TEOS), trimethylsilane (TMS), triisopropylsilane (TiPS), trivinyl-trimethyl-cyclotrisiloxane (V3D3), tetravinyl-tetramethyl-cyclotetrasiloxane (V4D4), tetramethylcyclotetrasiloxane (TMCS), octamethylcyclotetrasiloxane (OMCTS), hexamethyldisilazane (HMDSN), 2,4,6-trimethyl-2,4,6-trivinylcyclotrisilazane, dimethylamino-trimethylsilane (DMATMS), bis(dimethylamino)dimethylsilane (BDMADMS) and tris(dimethylamino)methylsilane (TDMAMS).

5 . The method according to claim 1 , wherein the protective coating has a nano-hardness of at least 6 GPa.

6 . The method according to claim 1 , wherein the substrate is (i) the external casing of an electrical device, or (ii) a printed circuit board.

Assignments (2)

Priority Claims (1)

Continuity (2)

References Cited (240)