Fast uniformity drift correction
Systems, apparatuses, and methods are provided for adjusting illumination slit uniformity in a lithographic apparatus. An example method can include irradiating, by a radiation source, a portion of a finger assembly with radiation. The example method can further include receiving, by a radiation detector, at least a portion of the radiation in response to the irradiating of the portion of the finger assembly. The example method can further include determining, by a processor, a change in a shape of the finger assembly based on the received radiation. The example method can further include generating, by the processor, a control signal configured to modify a position of the finger assembly based on the determined change in the shape of the finger assembly. Subsequently, the example method can include transmitting, by the processor, the control signal to a motion control system coupled to the finger assembly.
1 . A system, comprising:
a radiation source configured to:
generate radiation; and
transmit the generated radiation towards a finger assembly;
a radiation detector configured to:
receive at least a portion of the transmitted radiation; and
a processor configured to:
measure a change in a position of a reference mark disposed on the finger assembly based on the received radiation;
determine a change in a shape of the finger assembly based on the measured change in the position of the reference mark;
generate a control signal configured to modify a position of the finger assembly based on the determined change in the shape of the finger assembly; and
transmit the control signal to a motion control system coupled to the finger assembly.
2 . The system of claim 1 , wherein the determined change in the shape of the finger assembly based on the measured change in the position of the reference mark comprises a change in a position of an optical edge of a fingertip of the finger assembly based on a growth of the fingertip in response to an exposure of the fingertip to deep ultraviolet (DUV) radiation or extreme ultraviolet (EUV) radiation.
3 . The system of claim 1 , wherein the radiation source is configured to transmit the radiation during a wafer exchange operation of a lithographic apparatus.
4 . The system of claim 1 , wherein:
the generated radiation comprises a laser curtain; and
the radiation detector is configured to receive at least the portion of the transmitted radiation in response to an irradiation of a portion of the finger assembly by the laser curtain.
5 . The system of claim 4 , wherein the portion of the finger assembly comprises a mechanical edge of a fingertip of the finger assembly disposed separate from an optical edge of the fingertip of the finger assembly.
6 . The system of claim 1 , wherein the received radiation comprises radiation reflected from a surface of a fingertip of the finger assembly in response to an irradiation of the surface of the fingertip by the transmitted radiation.
7 . The system of claim 1 , wherein the reference mark is applied to a region of a multi-layer mirror material disposed on a fingertip of the finger assembly.
8 . A method for adjusting illumination slit uniformity in a lithographic apparatus, comprising:
irradiating, by a radiation source, a portion of a finger assembly with radiation;
receiving, by a radiation detector, at least a portion of the radiation in response to the irradiating of the portion of the finger assembly;
measuring, by a processor, a change in a position of a reference mark disposed on the finger assembly based on the received radiation;
determining, by the processor, a change in a shape of the finger assembly based on the measured change in the position of the reference mark;
generating, by the processor, a control signal configured to modify a position of the finger assembly based on the determined change in the shape of the finger assembly; and
transmitting, by the processor, the control signal to a motion control system coupled to the finger assembly.
9 . The method of claim 8 , wherein the determining the change in the shape of the finger assembly based on the measured change in the position of the reference mark comprises determining, by the processor, a change in a position of an optical edge of a fingertip of the finger assembly based on a growth of the fingertip in response to an exposure of the fingertip to deep ultraviolet (DUV) radiation or extreme ultraviolet (EUV) radiation.
10 . The method of claim 8 , wherein the irradiating the portion of the finger assembly comprises irradiating, by the radiation source, the portion of the finger assembly with the radiation during a wafer exchange operation of the lithographic apparatus.
11 . The method of claim 8 , wherein:
the radiation comprises a laser curtain; and
the receiving at least the portion of the radiation comprises receiving, by the radiation detector, at least the portion of the transmitted radiation in response to irradiating the portion of the finger assembly with the laser curtain.
12 . The method of claim 11 , wherein the portion of the finger assembly comprises a mechanical edge of a fingertip of the finger assembly disposed separate from an optical edge of the fingertip of the finger assembly.
13 . The method of claim 8 , wherein the receiving at least the portion of the radiation comprises receiving, by the radiation detector, radiation reflected from a surface of a fingertip of the finger assembly in response to irradiating the surface of the fingertip with the radiation.
14 . The method of claim 8 , wherein the reference mark is applied to a region of a multi-layer mirror material disposed on a fingertip of the finger assembly.