Sulfur-containing molecules for high aspect ratio plasma etching processes
View Patent ↗A method for forming a structure using a patterned mask layer comprises introducing an etching gas containing a sulfur-containing gas into a reaction chamber, converting the etching gas to a plasma, and allowing an etching reaction to proceed between the plasma and the one or more silicon-containing films so that the one or more silicon-containing films are selectively etched versus the patterned mask layer to form the structure, wherein the sulfur-containing gas contains a —SH thiol group and an aromatic 6 membered carbon ring having the formula wherein R1, R2, R3, R4 and R5 are independently selected from F, H, and/or C x F y H z group substituted on the aromatic ring, where x, y and z are integers, and at least one of the R1, R2, R3, R4 and R5 contains at least one fluorine atom, and S represents the —SH thiol group.
1 . An etching method for forming a structure by selectively etching one or more silicon-containing films in a substrate using a patterned mask layer deposited on top of the one or more silicon-containing films, the method comprising:
mounting the substrate in a reaction chamber;
introducing an etching gas containing a sulfur-containing gas into the reaction chamber;
converting the etching gas to a plasma; and
allowing an etching reaction to proceed between the plasma and the one or more silicon-containing films so that the one or more silicon-containing films are selectively etched versus the patterned mask layer to form the structure,
wherein the sulfur-containing gas contains a —SH thiol group and an aromatic 6 membered carbon ring having the formula
wherein R1, R2, R3, R4 and R5 are independently selected from F, H, and/or C x F y H z group substituted on the aromatic ring, where x, y and z are integers, at least one of the R1, R2, R3, R4 and R5 contains at least one fluorine atom, and S represents the —SH thiol group.
2 . The method of claim 1 , wherein the C x F y H z group is selected from CF 3 , CH 2 F, or CHF 2 .
3 . The method of claim 1 , further comprising
adding one or more hydrofluorocarbon, fluorocarbon, sulfur fluoride or nitrogen fluoride etching gases to the sulfur-containing gas, wherein the one or more fluorocarbon etching gases are selected from C 4 F 6 , C 4 F 8 , C 4 H 2 F 6 , CHF 3 , CH 2 F 2 , CH 3 F, CF 4 , C 2 F 6 , C 3 F 8 , SF 6 , NF 3 , C 2 F 4 , C 3 F 6 , C 4 F 10 , C 5 F 8 , C 6 F 6 , C 2 H 5 F, C 3 H 7 F, C 3 H 2 F 6 , C 2 HF 5 , C 2 H 2 F 2 , C x F y H z molecule (x, y, and z are integers) or combination thereof.
4 . The method of claim 1 , further comprising
adding an additive to the sulfur-containing gas, wherein the additive is selected from H 2 , SF 6 , NF 3 , N 2 , NH 3 , Cl 2 , BCl 3 , BF 3 , PF 3 , PCl 3 , PBr 3 , PH 3 , POCl 3 , PF 5 , POF 3 , PH 3 or P(R) 3 where R is an alkyl, or fluorinated alkyl groups selected from CF 3 , Br 2 , F 2 , HF, HBr, HCl, HI, IF 5 , or IF 7 .
5 . The method of claim 1 , further comprising
prior to activating the plasma, sequentially or simultaneously exposing the substrate to a co-reactant.
6 . The method of claim 5 , wherein the co-reactant is selected from O 2 , CO, CO 2 , NO, NO 2 , N 2 O, SO 2 , H 2 S, or COS or combinations thereof.
7 . The method of claim 5 , wherein the co-reactant is selected from H 2 , SF 6 , NF 3 , N 2 , NH 3 , Cl 2 , BCl 3 , BF 3 , PF 3 , PCl 3 , PBr 3 , PH 3 , POCl 3 , PF 5 , POF 3 , PH 3 or P(R) 3 where R is an alkyl, or fluorinated alkyl groups selected from CF 3 , Br 2 , F 2 , HF, HBr, HCl, HI, IF 5 , or IF 7 .
8 . The method of claim 1 , further comprising
prior to activating the plasma, sequentially or simultaneously exposing the substrate to an inert gas selected from Ar, Kr, Xe, Ne, N 2 , He or combination thereof.
9 . The method of claim 1 , wherein a temperature of the substrate ranges from approximately −196° C. to approximately 300° C.
10 . The method of claim 1 , wherein a temperature of the substrate ranges from approximately −196° C. to approximately 60° C.
11 . The method of claim 1 , further comprising
cooling the substrate to a temperature below approximately 25° C.
12 . The method of claim 11 , wherein the temperature of the substrate is below approximately −20° C.
13 . The method of claim 11 , wherein the temperature of the substrate ranges from approximately −196° C. to approximately −20° C.
14 . The method of claim 11 , wherein after the structure is formed, the temperature of the substrate is increased to greater than −20° C.
15 . The method of claim 1 , wherein the sulfur-containing gas is selected from the group consisting of C 6 HF 5 S, C 6 H 4 F 2 S, C 7 HF 7 S, C 7 H 5 F 3 S, C 6 H 4 F 2 S, C 6 H 3 F 3 S, C 6 H 3 F 3 S, C 6 H 3 F 3 S, C 7 H 4 F 4 S, C 7 H 3 F 5 S, C 6 H 3 F 7 S, C 7 H 3 F 5 S, C 7 H 3 F 5 S, and C 7 H 4 F 4 S.
16 . The method of claim 1 , wherein a mask material of the patterned mask layer is amorphous carbon, doped amorphous carbon, Si, SiN, Al, AlO, Ti, TiO or a metal and metal oxide.
17 . The method of claim 1 , wherein the one or more silicon-containing films include Si a O b C c N d H e where a, b, c, d, e range from 0.1 to 6 and b, c, d, e each is independently 0.
18 . The method of claim 1 , wherein the substrate is silicon-containing material.
19 . The method of claim 1 , wherein the substrate is SiO 2 , SiN, Si or an alternating layers of SiO and SiN.
20 . The method of claim 1 , wherein the aspect ratio of the structure ranges from approximately 5:1 to approximately 500:1.