Depositing of material by spraying precursor using supercritical fluid
Embodiments relate to surface treating a substrate, spraying precursor onto the substrate using supercritical carrier fluid, and post-treating the substrate sprayed with the precursor to form a layer with nanometer thickness of material on the substrate. A spraying assembly for spraying the precursor includes one or more spraying modules and one or more radical injectors at one or more sides of the spraying module. A differential spread mechanism is provided between the spraying module and the radical injectors to inject spread gas that isolates the sprayed precursor and radicals generated by the radical injectors. As relative movement between the substrate and the spraying assembly is made, portions of the substrate is exposed to first radicals, sprayed with precursors either one of the spraying modules or both spraying modules using supercritical carrier fluid, and then exposed to second radicals again.
1 . An apparatus for depositing material on a substrate, comprising:
a spraying module configured to spray a precursor onto the substrate;
a plasma reactor configured to generate radicals, wherein the plasma reactor is arranged adjacent to the spraying module;
a passage formed between the spraying module and the plasma reactor, the passage configured to receive a spread gas for a first portion of the spread gas entering the plasma reactor to generate the radicals and a second portion of a spread gas entering the spraying module to separate the radicals and the precursor; and
an actuator coupled to the spraying module or the plasma reactor and configured to change a height of the spraying module relative to the substrate or a height of the plasma reactor relative to the substrate, the height of the spraying module relative to the substrate or the height of the plasma reactor relative to the substrate controlling an amount of the first portion of the spread gas and an amount of the second portion of the spread gas;
wherein the actuator is further configured to change a width of a wall of the spraying module or a width of a wall of the plasma reactor, the width of the wall of the spraying module or the width of the wall of the plasma reactor further controlling the amount of the first portion of the spread gas and the amount of the second portion of the spread gas.
2 . The apparatus of claim 1 , wherein the spraying module is configured to spray a mixture of the precursor and a carrier fluid onto the substrate.
3 . The apparatus of claim 2 , wherein the carrier fluid is in a supercritical fluid state in the spraying module, transitions to a gas state outside the spraying module, and travels outside the spraying module to the substrate in the gas state.
4 . The apparatus of claim 2 , wherein the carrier fluid is one of carbon dioxide (CO 2 ), Ethane (C 2 H 6 ), Propane (C 3 H 8 ), Ethylene (C 2 H 4 ), Propylene (C 3 H 6 ), Ethanol (C 2 H 5 OH), and Acetone (C 3 H 6 O).
5 . The apparatus of claim 1 , wherein the plasma reactor is configured to generate the radicals in atmospheric pressure.
6 . The apparatus of claim 1 , wherein the substrate is placed in atmospheric pressure when the spraying module sprays the precursor.
7 . The apparatus of claim 1 , further comprising a second spraying module adjacent to the spraying module, the second spraying module configured to spray a second precursor onto the substrate, the second precursor reacting with the precursor to form a solid film on the substrate.
8 . The apparatus of claim 1 , wherein the spraying module is formed with one or more exhaust ports to discharge remaining precursor.
9 . The apparatus of claim 1 , wherein the plasma reactor is configured to generate the radicals for treating the substrate before the spraying module sprays the precursor.
10 . The apparatus of claim 1 , wherein the plasma reactor is configured to generate the radicals after the spraying module sprays the precursor, the radicals used to transform a layer formed on the substrate from the precursor to a solid layer.
11 . The apparatus of claim 1 , further a second plasma reactor adjacent to the spraying module at a side opposite to the plasma reactor, the second plasma reactor configured to generate second radicals.
12 . The apparatus of claim 1 , wherein the spraying module is configured to move in relative to the substrate to spray the precursor onto different portions of the substrate.
13 . The apparatus of claim 1 , wherein the plasma reactor is configured to move in relative to the substrate to expose different portions of the substrate to the radicals.
14 . The apparatus of claim 1 , wherein the precursor is one of homobifunctional precursors from diol precursors and dithiol precursors, or one of heterobifunctional precursors having amine-, hydroxyl-, mercapto-, alkyl-, or halide functional groups.
15 . The apparatus of claim 1 , wherein the precursor is one of trimethylaluminum, dimethylzinc, trimethylgalium, trimethylindium, tertdimethylaminozirconium, trisilylamine, and tertdimethylaminotitanium.
16 . The apparatus of claim 1 , wherein the spread gas is N 2 , Ar, N 2 O, H 2 , O 2 , CO 2 , O 3 , NH 3 or a combination thereof.
17 . The apparatus of claim 1 , wherein the substrate is an inorganic material or organic material.