Showerhead pumping geometry for precursor containment
Gas injector with a vacuum channel having an inlet opening in the front face and an outlet opening in the back face of the injector are described. The vacuum channel comprises a first leg extending a first length from the inlet opening in the front face at a first angle relative to the front face and a second leg extending a second length from the first leg to the outlet opening in the back face at a second angle relative to the front face. Processing chambers and methods of use comprising a plurality of processing regions bounded around an outer peripheral edge by one or more vacuum channel. A first processing region has a first vacuum channel with a first outer diameter and a second processing region has a second vacuum channel with a second outer diameter, the first outer diameter being less than the second outer diameter.
1 . A processing chamber comprising:
a substrate support with a top surface configured to support a wafer during processing and move the wafer between a plurality of processing regions, the substrate support comprising an edge ring mounted on the substrate support with an inwardly projecting inner protrusion sized to provide a gap between the top surface of the substate support and a top surface of the inwardly projecting inner protrusion and the substrate support is further configured so that the wafer overhangs the inwardly projecting inner protrusion;
a first processing region comprising a first gas distribution plate having a first front face opposite the top surface of the substrate support, the first gas distribution plate having a first vacuum channel on the first front face, the first vacuum channel having a first outer diameter OD 1 ; and
a second processing region spatially separated from the first processing region and comprising a second gas distribution plate having a second front face opposite the top surface of the substrate support, the second gas distribution plate having a second vacuum channel on the second front face, the second vacuum channel having an inlet opening in the front face and an outlet opening in a second back face of the second gas distribution plate, the second vacuum channel comprising a first leg extending a first length from the inlet opening in the second front face at a first angle relative to the second front face and a second leg extending a second length from the first leg to the outlet opening in the second back face at a second angle relative to the second front face, the inlet opening of the second vacuum channel having a second inner diameter ID 2 , which is greater than the first outer diameter OD 1 .
2 . The processing chamber of claim 1 , wherein the first leg has a first length in a range of 1 mm to 7.5 mm.
3 . The processing chamber of claim 1 , wherein the first angle is in a range of 80° to 100° relative to the front face.
4 . The processing chamber of claim 1 , wherein the first leg has a first width in a range of 1 mm to 3 mm.
5 . The processing chamber of claim 1 , wherein the top surface of the substrate support is configured to support the wafer having a diameter of 300 mm, and the first leg of the vacuum channel has an inner diameter in a range of 300 mm to 302 mm.
6 . The processing chamber of claim 5 , wherein the first leg of the vacuum channel has an outer diameter in a range of 301 mm to 305 mm.
7 . The processing chamber of claim 1 , wherein the inlet opening has a fillet at the front face, the fillet having a radius in a range of 0.15 mm to 0.4 mm.
8 . The processing chamber of claim 1 , wherein the inlet opening has a chamfer at the front face, the chamfer having a chamfered face with a length in a range of 0.1 mm to 0.4 mm.
9 . The processing chamber of claim 1 , wherein the second leg has a second width in a range of 2 mm to 5 mm.
10 . The processing chamber of claim 1 , wherein the second angle is in a range of 35° to 60° relative to the front face.
11 . The processing chamber of claim 10 , wherein the first leg has an inner diameter in a range of 300 mm to 302 mm and an outer diameter in a range of 301 mm to 305 mm to define a first width of at least 1 mm.
12 . The processing chamber of claim 10 , wherein the first leg has a first width in a range of 1 mm to 3 mm.
13 . The processing chamber of claim 10 , wherein the second leg has a second width that is greater than the first width of the first leg.
14 . The processing chamber of claim 10 , wherein the first angle is in a range of 85° to 95° relative to the front face.
15 . The processing chamber of claim 14 , wherein the second angle is in a range of 40° to 55° relative to the front face.
16 . A method of processing a substrate in the processing chamber of claim 1 , the method comprising:
exposing a wafer supported on the substrate support to a first reactant within the first processing region;
moving the wafer to the second processing region; and
exposing the wafer to a second reactant within the second processing region.