SiC epitaxial wafer
A SiC epitaxial wafer including: a SiC substrate; and a SiC epitaxial layer stacked on one surface of the SiC substrate, wherein a diameter of the SiC substrate is 195 mm or more, and a warp is 50 μm or less.
1 . A SiC epitaxial wafer comprising:
a SiC substrate; and
a SiC epitaxial layer stacked on one surface of the SiC substrate, wherein,
a diameter of the SiC substrate is 195 mm or more,
a warp is 50 μm or less, and
a warp of the SiC substrate is 50 μm or less.
2 . The SiC epitaxial wafer according to claim 1 ,
wherein, in a surface of the SiC epitaxial layer, in a case where supports are positioned to overlap with a circumference on 7.5 mm inside from an outermost periphery and a plane passing through parts overlapping with the supports when seen in a thickness direction is defined as a reference plane, a bow is 30 μm or less.
3 . The SiC epitaxial wafer according to claim 1 ,
wherein, the warp is 30 μm or less.
4 . The SiC epitaxial wafer according to claim 2 ,
wherein, in the surface of the SiC epitaxial layer, in the case where supports are positioned to overlap with the circumference on 7.5 mm inside from the outermost periphery and the plane passing through parts overlapping with the supports when seen in the thickness direction is defined as the reference plane, the bow is 10 μm or less.
5 . The SiC epitaxial wafer according to claim 2 ,
wherein, in the surface of the SiC epitaxial layer, in the case where supports are positioned to overlap with the circumference on 7.5 mm inside from the outermost periphery and the plane passing through parts overlapping with the supports when seen in the thickness direction is defined as the reference plane, the bow is-30 μm or more.
6 . The SiC epitaxial wafer according to claim 1 ,
wherein, a thickness of the SiC substrate is 350 μm or less.
7 . A SiC epitaxial wafer comprising:
a SiC substrate; and
a SiC epitaxial layer stacked on one surface of the SiC substrate, wherein,
a diameter of the SiC substrate is 195 mm or more,
a warp of the SiC epitaxial wafer is 50 μm or less, and
a value subtracting the warp of the SiC substrate from a warp of the SiC epitaxial wafer is 0 μm or more and 78 μm or less.
8 . The SiC epitaxial wafer according to claim 7 ,
wherein, the value subtracting the warp of the SiC substrate from the warp of the SiC epitaxial wafer is 0 μm or more and 47 μm or less.
9 . A SiC epitaxial wafer comprising:
a SiC substrate; and
a SiC epitaxial layer stacked on one surface of the SiC substrate, wherein,
a diameter of the SiC substrate is 195 mm or more,
a thickness of the SiC substrate is 350 μm or less, and
a warp is 50 μm or less.
10 . The SiC epitaxial wafer according to claim 7 ,
wherein, in a surface of the SiC epitaxial layer, in a case where supports are positioned to overlap with a circumference on 7.5 mm inside from an outermost periphery and a plane passing through parts overlapping with the supports when seen in a thickness direction is defined as a reference plane, a bow is 30 μm or less.
11 . The SiC epitaxial wafer according to claim 9 ,
wherein, in a surface of the SiC epitaxial layer, in a case where supports are positioned to overlap with a circumference on 7.5 mm inside from an outermost periphery and a plane passing through parts overlapping with the supports when seen in a thickness direction is defined as a reference plane, a bow is 30 μm or less.
12 . The SiC epitaxial wafer according to claim 10 ,
wherein, in the surface of the SiC epitaxial layer, in the case where supports are positioned to overlap with the circumference on 7.5 mm inside from the outermost periphery and the plane passing through parts overlapping with the supports when seen in the thickness direction is defined as the reference plane, the bow is 10 μm or less.
13 . The SiC epitaxial wafer according to claim 11 ,
wherein, in the surface of the SiC epitaxial layer, in the case where supports are positioned to overlap with the circumference on 7.5 mm inside from the outermost periphery and the plane passing through parts overlapping with the supports when seen in the thickness direction is defined as the reference plane, the bow is 10 μm or less.
14 . The SiC epitaxial wafer according to claim 10 ,
wherein, in the surface of the SiC epitaxial layer, in the case where supports are positioned to overlap with the circumference on 7.5 mm inside from the outermost periphery and the plane passing through parts overlapping with the supports when seen in the thickness direction is defined as the reference plane, the bow is-30 μm or more.
15 . The SiC epitaxial wafer according to claim 11 ,
wherein, in the surface of the SiC epitaxial layer, in the case where supports are positioned to overlap with the circumference on 7.5 mm inside from the outermost periphery and the plane passing through parts overlapping with the supports when seen in the thickness direction is defined as the reference plane, the bow is-30 μm or more.
16 . The SiC epitaxial wafer according to claim 9 ,
wherein, the warp is 30 μm or less.
17 . The SiC epitaxial wafer according to claim 1 ,
wherein, the warp of the SiC substrate is 30 μm or less.
18 . The SiC epitaxial wafer according to claim 6 ,
wherein, the warp of the SiC substrate is 30 μm or less.
19 . The SiC epitaxial wafer according to claim 16 ,
wherein, a warp of the SiC substrate is 30 μm or less.
20 . The SiC epitaxial wafer according to claim 19 ,
wherein, in a surface of the SiC epitaxial layer, in the case where supports are positioned to overlap with the circumference on 7.5 mm inside from the outermost periphery and the plane passing through parts overlapping with the supports when seen in the thickness direction is defined as the reference plane, a bow is −30 μm or more and 10 μm or less.