Semiconductor devices and methods of forming the same
Semiconductor devices including the use of solder materials and methods of manufacturing are provided. In embodiments the solder materials utilize a first tensile raising material, a second tensile raising material, and a eutectic modifier material. By utilizing the materials a solder material can be formed and used with a reduced presence of needles that may otherwise form during the placement and use of the solder material.
1 . A method of manufacturing a semiconductor device, the method comprising:
applying an external connector to a substrate, the external connector comprising:
a first tensile raising material at a first percentage of between about 2.2% and less than 2.8%;
a second tensile raising material at a second percentage of between about 4% and about 4.4%; and
a eutectic modifier at a third percentage of between about 0.5% and about 1.1%; and
reflowing the external connector, wherein after the reflowing the external connector, the external connector is free from silver-based intermetallic compound needles.
2 . The method of claim 1 , wherein the first tensile raising material comprises silver, the second tensile raising material comprises bismuth, and the eutectic modifier comprises copper.
3 . The method of claim 1 , wherein the substrate is part of a fan-out package.
4 . The method of claim 1 , wherein the substrate is part of a wafer level chip scale package.
5 . The method of claim 1 , wherein the substrate is part of an integrated fan out on substrate structure.
6 . The method of claim 1 , wherein the substrate is part of a chip on wafer on substrate.
7 . The method of claim 1 , wherein the external connector further comprises:
nickel; and
germanium.
8 . A method of manufacturing a semiconductor device, the method comprising:
placing a solder material onto a substrate, the solder material having a composition of silver between about 2.2% and about 2.8%;
heating the solder material past a eutectic temperature; and
cooling the solder material from a solidus start temperature to a solidus end temperature, wherein a difference between the solidus start temperature and the solidus end temperature is at least 13° C., wherein after the cooling the solder material the solder material is free from silver-based intermetallic compound needles.
9 . The method of claim 8 , wherein the solder material has a composition of bismuth between about 4% and about 4.4%.
10 . The method of claim 9 , wherein the solder material has a composition of copper between about 0.5% and about 1.1%.
11 . The method of claim 8 , wherein after the cooling the solder material the solder material has a tensile strength of about 96.7 MPa.
12 . The method of claim 11 , wherein after the cooling the solder material the solder material has an elongation of about 39%.
13 . The method of claim 8 , wherein the substrate is part of a flip chip chip scale package.
14 . The method of claim 8 , wherein the substrate is part of a chip on wafer on substrate.
15 . A semiconductor device comprising:
a first semiconductor die and a second semiconductor die encased within an encapsulant;
an interposer substrate bonded to the first semiconductor die and the second semiconductor die;
a substrate bonded to the interposer substrate; and
an external connection on the substrate, the external connection comprising:
tin;
silver at a concentration of between about 2.2% and less than 2.8%;
bismuth at a concentration of between about 4% and about 4.4%; and
copper at a concentration of between about 0.5% and about 1.1%.
16 . The semiconductor device of claim 15 , wherein the external connection has a tensile strength of about 96.7 MPa.
17 . The semiconductor device of claim 15 , wherein the external connection has an elongation of about 39%.
18 . The semiconductor device of claim 15 , wherein the external connection further comprises nickel.
19 . The semiconductor device of claim 15 , wherein the external connection further comprises germanium.
20 . The semiconductor device of claim 15 , wherein the external connection is free from silver-based needles.