IP Library Granted Patent US 12,545,994
Granted Patent B2
US 12,545,994 · App. 17/923,312 · Granted Feb 10, 2026

Film forming method and film forming apparatus

Inventors: Sena Fujita (Nirasaki, JP); Tadashi Mitsunari (Nirasaki, JP); Takamichi Kikuchi (Nirasaki, JP)
Assignee: TOKYO ELECTRON LIMITED
C23C16/08C23C16/4583C23C16/505
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Quick Facts
Patent No.
US 12,545,994
App. No.
17/923,312
Granted
Feb 10, 2026
Kind
B2
Abstract

A film forming method includes: supplying a liquid to a concave portion of a substrate whose surface includes the concave portion and a convex portion which are adjacent to each other; and selectively forming a film on a top surface of the convex portion of the surface of the substrate by supplying a processing gas, which chemically changes the liquid, to the surface of the substrate, and moving the liquid from the concave portion to the top surface of the convex portion by a reaction between the processing gas and the liquid.

Claims (27)

1 . A film forming method comprising:

supplying a liquid to a concave portion of a substrate whose surface includes the concave portion and a convex portion which are adjacent to each other; and

selectively forming a film on a top surface of the convex portion of the surface of the substrate by supplying a processing gas, which chemically changes the liquid, to the surface of the substrate, and moving the liquid, which is in a liquid state, from the concave portion to the top surface of the convex portion by a reaction between the processing gas and the liquid.

2 . The film forming method of claim 1 , wherein the liquid is a halide.

3 . The film forming method of claim 2 , wherein the supplying the liquid to the concave portion includes forming the liquid by a reaction between a raw material gas of the halide and a reaction gas that reacts with the raw material gas.

4 . The film forming method of claim 3 , wherein the supplying the liquid to the concave portion includes:

plasmarizing both the raw material gas and the reaction gas when simultaneously supplying the raw material gas and the reaction gas; and

plasmarizing the reaction gas when alternately supplying the raw material gas and the reaction gas.

5 . The film forming method of claim 1 , wherein the liquid is an ionic liquid.

6 . The film forming method of claim 1 , wherein the liquid is liquid metal.

7 . The film forming method of claim 1 , wherein the liquid is a liquid polymer.

8 . The film forming method of claim 1 , wherein the liquid is supplied to the concave portion of the substrate by a spin coating method.

9 . The film forming method of claim 7 , wherein the liquid is synthesized inside a processing container that accommodates the substrate, and is supplied to the concave portion of the substrate.

10 . The film forming method of claim 1 , wherein the processing gas that chemically changes the liquid contains an element to be introduced into the liquid.

11 . The film forming method of claim 10 , wherein the processing gas that chemically changes the liquid includes an oxygen-containing gas.

12 . The film forming method of claim 10 , wherein the processing gas that chemically changes the liquid includes a nitrogen-containing gas.

13 . The film forming method of claim 10 , wherein the processing gas that chemically changes the liquid includes a gas of hydride.

14 . The film forming method of claim 13 , wherein the hydride contains Si, Ge, B, C, or P.

15 . The film forming method of claim 1 , wherein the processing gas that chemically changes the liquid degases an element that constitutes the liquid.

16 . The film forming method of claim 15 , wherein the processing gas that chemically changes the liquid includes a reducing gas.

17 . The film forming method of claim 16 , wherein the reducing gas is a hydrogen gas or a deuterium gas.

18 . The film forming method of claim 1 , wherein the selectively forming the film on the top surface of the convex portion includes plasmarizing the processing gas that chemically changes the liquid.

19 . The film forming method of claim 1 , comprising:

repeating the supplying the liquid to the concave portion and the selectively forming the film on the top surface of the convex portion.

20 . The film forming method of claim 1 , further comprising:

modifying the film formed on the top surface of the convex portion.

21 . The film forming method of claim 1 , wherein a temperature of the substrate is lower than a decomposition point of the liquid when the liquid is supplied to the concave portion.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 7, 2022
From: FUJITA, SENA; MITSUNARI, TADASHI; KIKUCHI, TAKAMICHI
To: TOKYO ELECTRON LIMITED
Reel/Frame 061674/0484 →
Priority Claims (2)
JP 2020-082840 · May 8, 2020 · national
JP 2021-064172 · Apr 5, 2021 · national
Continuity (1)
Related Publication 20230243031A1 · Aug 3, 2023
References Cited (5)
US 9953840B2 · Marumoto · 2018 [cited by examiner]
US 20210020432A1 · Blanquart · 2021 [cited by examiner]
CN 112242295A · 2021 [cited by applicant]
JP 2018117038A · 2018 [cited by applicant]
JP 202119199A · 2021 [cited by applicant]