Method of manufacturing semiconductor

1 . A method of manufacturing a semiconductor device, the method comprising:

forming a first stack by alternately stacking a plurality of first layers and a plurality of second layers one layer at a time on a substrate;

forming a first vertical hole penetrating the first stack in a vertical direction;

depositing a first carbon layer on internal sidewalls of the first vertical hole, the first carbon layer being in contact with portions exposed via the first vertical hole among the plurality of first layers and the plurality of second layers;

forming a first sacrificial metal layer filling the first vertical hole on the first carbon layer;

forming a second stack on the first stack, the second stack including a plural amount of first layers and a plural amount of second layers alternately stacked one layer at a time therein;

forming a second vertical hole penetrating the second stack in the vertical direction, the second vertical hole in fluid communication with the first vertical hole;

depositing a second carbon layer on internal sidewalls of the second vertical hole, the second carbon layer being in contact with portions exposed via the second vertical hole among the plural amount of first layers and the plural amount of second layers;

forming a second sacrificial metal layer filling the second vertical hole on the second carbon layer;

forming a third stack on the second stack;

forming a third vertical hole penetrating the third stack in the vertical direction, the third vertical hole in fluid communication with the second vertical hole; and

removing the first sacrificial metal layer, the second sacrificial metal layer, the first carbon layer, and the second carbon layer.

2 . The method of claim 1 , wherein

the first carbon layer and the second carbon layer are selectively deposited on the plurality of second layers in the first stack and the plural amount of second layers in the second stack, and

the first carbon layer and the second carbon layer are not deposited on the plurality of first layers in the first stack and the plural amount of first layers in the second stack.

3 . The method of claim 1 , wherein the first carbon layer and the second carbon layer each have a thickness of about 5 nm to about 15 nm.

4 . The method of claim 1 , wherein the depositing the first carbon layer and the second carbon layer is performed using an acetylene (C 2 H 2 ) gas at a temperature of 500° C. or higher.

5 . The method of claim 1 , wherein the first sacrificial metal layer and the second sacrificial metal layer comprise titanium nitride (TiN) and tungsten (W).

6 . The method of claim 1 , wherein the removing the first sacrificial metal layer, the second sacrificial metal layer, the first carbon layer, and the second carbon layer includes a strip process using sulfuric acid (H 2 SO 4 ).

7 . The method of claim 1 , wherein

each of the plurality of first layers and the plural amount of first layers comprise a silicon oxide layer, and

each of the plurality of second layers and the plural amount of second layers comprise a silicon nitride layer.

8 . The method of claim 1 , wherein the third stack comprises silicon dioxide (SiO 2 ).

9 . The method of claim 1 , further comprising:

removing the plurality of second layers and removing the plural amount of second layers to provide a removed space, and

filling the removed space with word lines.

10 . The method of claim 1 , further comprising:

forming a channel hole in each of the first vertical hole, the second vertical hole, and the third vertical hole.

11 . A method of manufacturing a semiconductor device, the method comprising:

forming a first stack by alternately stacking a plurality of first layers and a plurality of second layers one layer at a time on a substrate;

forming a first vertical hole penetrating the first stack in a vertical direction;

depositing a first carbon layer on internal sidewalls of the first vertical hole, the first carbon layer being in contact with portions exposed via the first vertical hole among the plurality of first layers and the plurality of second layers;

forming a first sacrificial metal layer filling the first vertical hole on the first carbon layer;

forming a second stack on the first stack, the second stack including a plural amount of first layers and a plural amount of second layers alternately stacked one layer at a time therein;

forming a second vertical hole penetrating the second stack in the vertical direction, the second vertical hole in fluid communication with the first vertical hole;

depositing a second carbon layer on internal sidewalls of the second vertical hole, the second carbon layer being in contact with portions exposed via the second vertical hole among the plural amount of first layers and the plural amount of second layers;

forming a second sacrificial metal layer filling the second vertical hole on the second carbon layer;

forming a third stack on the second stack, the third stack including a plural number of first layers and a plural number of second layers alternately stacked on the second stack;

forming a third vertical hole penetrating the third stack in the vertical direction, the third vertical hole in fluid communication with the second vertical hole; and

removing the first sacrificial metal layer, the second sacrificial metal layer, the first carbon layer, and the second carbon layer.

12 . The method of claim 11 , wherein

the first carbon layer and the second carbon layer are selectively deposited on the plurality of second layers in the first stack and the plural amount of second layers in the second stack, respectively, and

the first carbon layer and the second carbon layer are not deposited on the plurality of first layers in the first stack and the plural amount of first layers in the second stack, respectively.

13 . The method of claim 11 , wherein the first carbon layer and the second carbon layer each have a thickness of about 5 nm to about 15 nm.

14 . The method of claim 11 , the depositing of the first carbon layer and the second carbon layer is performed using an acetylene (C 2 H 2 ) gas at a temperature of 500° C. or higher.

15 . The method of claim 11 , wherein the first sacrificial metal layer and the second sacrificial metal layer each comprise titanium nitride (TiN) and tungsten (W).

16 . The method of claim 11 , wherein the removing the first sacrificial metal layer, the second sacrificial metal layer, the first carbon layer, and the second carbon layer includes a strip process using sulfuric acid (H 2 SO 4 ).

17 . The method of claim 11 , wherein

each of the plurality of first layers, the plural amount of first layers, and the plural number of first layers comprises a silicon oxide layer, and

each of the plurality of second layers, the plural amount of second layers, and the plural number of second layers comprises a silicon nitride layer.

18 . The method of claim 11 , further comprising:

removing the plurality of second layers, the plural amount of second layers, and the plural number of second layers to provide a removed space, and

filling the removed space with word lines.

19 . The method of claim 11 , further comprising:

forming a channel hole in each of the first vertical hole, the second vertical hole, and the third vertical hole.

20 . A method of manufacturing a semiconductor device, the method comprising

performing a process cycle on a substrate,

the process cycle including forming a layer stack on a substrate, forming a plurality of openings extending a depth from an uppermost surface of the layer stack to a lowermost surface of the layer stack, depositing a carbon layer on internal sidewalls of the layer stack in the plurality of openings, and filling the plurality of openings with a sacrificial metal layer,

the layer stack including a plurality of silicon oxide layers and a plurality of silicon nitride layers alternately stacked on each other,

the carbon layer having a thickness in a range of about 5 nm to about 15 nm,

the depositing the carbon layer including selectively depositing the carbon layer on exposed sidewalls of the plurality of silicon nitride layers of the layer stack and not depositing the carbon layer on exposed sidewalls of the plurality of silicon oxide layers of the layer stack;

preparing a plurality of features on the sacrificial metal layer by completing the process cycle one time;

forming a first feature by forming a silicon dioxide stack on some features among the plurality of features, and by forming a first opening with a depth extending from an uppermost surface of the silicon dioxide stack to a lowermost surface of the silicon dioxide stack, the first opening in fluid communication with a corresponding one of the plurality of openings of the layer stack, the forming the first feature including forming a first carbon film in the first opening and forming a first sacrificial metal film in the first opening;

forming a second feature by forming a new layer stack on other features among the plurality of features,

the second feature including a plural amount of silicon oxide layers and a plural amount of silicon nitride layers alternately stacked on each other on the other features among the plurality of features,

the forming the second feature including forming a second opening with a depth extending from an uppermost surface of the new layer stack to a lowermost surface of the new layer stack, the second opening in fluid communication with an underlying one of the plurality of openings, and

the forming the second feature including forming a second carbon film in the second opening and forming a second sacrificial metal film in the second opening; and

performing a strip process of simultaneously removing the sacrificial metal layer, the carbon layer, the first carbon film, the second carbon film, the first sacrificial metal film, and the second sacrificial metal film.