Susceptor and manufacturing method therefor
Disclosed are a susceptor for enabling uniform plasma treatment over the entire surface of a wafer, and a manufacturing method therefor. Provided is the susceptor comprising: a dielectric plate having an upper surface on which a wafer is loaded, and a lower surface facing same; and an inner RF electrode and an outer RF electrode that are buried in the dielectric plate, wherein, with respect to the lower surface, the height of a first plane in which the inner RF electrode is buried is less than the height of a second plane in which the outer RF electrode is buried.
1 . A susceptor comprising:
a dielectric plate including an upper surface on which a wafer is loaded, and a lower surface opposite the upper surface, wherein the dielectric plate comprises an upper pre-sintered body stacked on a lower pre-sintered body, wherein the lower pre-sintered body comprises a plurality of stepped surface structures that serve as a fixing frame for stacking the upper pre-sintered body; and
an inner RF electrode formed on the lower pre-sintered body and an outer RF electrode formed on the upper pre-sintered body;
a connection member for power supply to the outer RF electrode, wherein the connection member is in the form of an elongate plate processed to have a “C” shape,
wherein, with respect to the lower surface, a height of a first plane at which the inner RF electrode is located is less than a height of a second plane at which the outer RF electrode is located.
2 . The susceptor of claim 1 , wherein
the upper surface includes a first surface on which a wafer is loaded and a second surface surrounding the first surface, and
a height of the first surface is lower than a height of the second surface with respect to the lower surface.
3 . The susceptor of claim 2 , wherein a first upper dielectric layer thickness (udt1) from the first plane to the first surface is substantially the same as a second upper dielectric layer thickness (udt2) from the second plane to the second surface.
4 . The susceptor of claim 2 , wherein a first upper dielectric layer thickness (udt1) from the first plane to the first surface and a second upper dielectric layer thickness (udt2) from the second plane to the second surface satisfy a relationship of −0.5<(udt1−udt2)/udt1<0.5.
5 . The susceptor of claim 3 , wherein a ratio of an electrode gap (δ) defined as a difference between an inner circumference radius (r3) of the outer RF electrode and a radius (r1) of the inner RF electrode with respect to a radius (r1) of an inner electrode satisfies a relationship of 0.9≤r3/r1≤1.0.
6 . The susceptor of claim 1 , wherein the inner RF electrode and the outer RF electrode are one of a sheet-type or a mesh-type.
7 . The susceptor of claim 1 , wherein the connection member is one of a sheet-type or a rod-type.
8 . The susceptor of claim 1 , further comprising:
a heating element disposed within the plate.
9 . The susceptor of claim 1 , further comprising:
a clamping electrode disposed within the plate.
10 . The susceptor of claim 1 , wherein a height difference between the first plane and the second plane is 0.1 to 2.0 mm.
11 . The susceptor of claim 4 , wherein a ratio of an electrode gap 8 defined as a difference between an inner circumference radius (r3) of the outer RF electrode and a radius (r1) of the inner RF electrode with respect to a radius (r1) of an inner electrode satisfies a relationship of 0.9≤r3/r1≤1.0.
12 . The susceptor of claim 1 , wherein opposite end portions of the connection member are bent.