Semiconductor package
A semiconductor package, includes: a first semiconductor chip including first connection pads on the first front surface, and through electrodes extending perpendicularly to the first rear surface and electrically connected to at least a portion of the first connection pads; a second semiconductor chip including second connection pads on the second front surface, and on the first rear surface so that the second rear surface faces the first semiconductor chip; a dielectric layer on the second semiconductor chip; first conductive structures in the dielectric layer, and connecting the through electrodes of a first group and the second connection pads; second conductive structures in the dielectric layer, and having first and second ends, the first ends connected to the through electrodes of a second group and at least a portion of the second ends thereof being exposed from the dielectric layer; at least one third semiconductor chip including third connection pads on the third front surface, and on the dielectric layer so that the third rear surface faces the second semiconductor chip; conductive wires connecting the second conductive structures and the third connection pads.
1 . A semiconductor package, comprising:
a first semiconductor chip having a first front surface and an opposite first rear surface, the first semiconductor chip including first connection pads on the first front surface and through electrodes extending to the first rear surface and electrically connecting at least a portion of the first connection pads;
a second semiconductor chip having a second front surface and an opposing second rear surface, including second connection pads on the second front surface and on the first rear surface so that the second rear surface faces the first semiconductor chip;
a dielectric layer on the second semiconductor chip and on the first rear surface;
first conductive structures in the dielectric layer connecting a first group of the through electrodes and the second connection pads;
second conductive structures in the dielectric layer having first and second ends, the first ends connecting a second group of the through electrodes, and at least a portion of the second ends being exposed from the dielectric layer;
at least one third semiconductor chip having a third front surface and an opposing third rear surface, the at least one third semiconductor chip including third connection pads on the third front surface and on the dielectric layer so that the third rear surface faces the second semiconductor chip;
conductive wires connecting the second conductive structures and the third connection pads;
an encapsulation layer on the dielectric layer and the at least one third semiconductor chip on the first rear surface; and
connection bumps on the first front surface electrically connected to the first connection pads.
2 . The semiconductor package of claim 1 , wherein the first and second conductive structures comprise a pattern portion extending in parallel in the dielectric layer, respectively, and a via portion extending perpendicularly from the pattern portion, and electrically connected to the second connection pads or the through electrodes.
3 . The semiconductor package of claim 2 , wherein the via portion has a width that is greater than a width of the through electrodes.
4 . The semiconductor package of claim 1 , wherein the dielectric layer has openings exposing at least a portion of other ends of the second conductive structures.
5 . The semiconductor package of claim 4 , wherein the conductive wires are connected to the second conductive structures through the openings.
6 . The semiconductor package of claim 1 , wherein the at least one third semiconductor chip does not overlap the first conductive structures and the second conductive structures in a direction perpendicular to the first rear surface.
7 . The semiconductor package of claim 1 , wherein the dielectric layer has a width that is narrower than a width of the first semiconductor chip.
8 . The semiconductor package of claim 1 , wherein the encapsulation layer is on a side surface of the dielectric layer.
9 . The semiconductor package of claim 1 , wherein the dielectric layer comprises a material that is different from that of the encapsulation layer.
10 . The semiconductor package of claim 9 , wherein the dielectric layer comprises a photosensitive resin, and
the encapsulation layer comprises a non-photosensitive resin.
11 . The semiconductor package of claim 1 , wherein the first semiconductor chip comprises a logic chip, and
the second semiconductor chip and the at least one third semiconductor chip comprise a memory chip.
12 . The semiconductor package of claim 1 , further comprising:
adhesive films on the second rear surface and the third rear surface, respectively.
13 . The semiconductor package of claim 1 , wherein the first semiconductor chip further comprises back pads on the first rear surface, and
the through electrodes electrically connect the back pads and the at least a portion of the first connection pads.
14 . The semiconductor package of claim 1 , further comprising:
a redistribution structure including an insulating layer on the first front surface, and a redistribution layer electrically connecting the first connection pads and the connection bumps in the insulating layer.
15 . A semiconductor package, comprising:
a first semiconductor chip having a first front surface and an opposing first rear surface, the first semiconductor chip including first connection pads on the first front surface and through electrodes spaced apart in a first direction, parallel to the first rear surface, and electrically connected to at least a portion of the first connection pads;
at least one pair of second semiconductor chips spaced apart from each other in a second direction intersecting the first direction on the first rear surface of the first semiconductor chip, and including second connection pads;
first and second conductive structures electrically connected to the through electrodes between the at least one pair of second semiconductor chips;
a dielectric layer on at least a portion of at least some of the second semiconductor chips, the first conductive structures, and the second conductive structures; and
at least one pair of third semiconductor chips spaced apart from each other in the second direction on the dielectric layer, and including third connection pads;
wherein the first conductive structures extend in the dielectric layer to connect a first group of the through electrodes and the second connection pads, and
the second conductive structures connect a second group of the through electrodes and a conductive wire connected to the third connection pads.
16 . The semiconductor package of claim 15 , wherein the at least one pair of third semiconductor chips do not overlap the first and second conductive structures in a direction, perpendicular to the first rear surface.
17 . The semiconductor package of claim 15 , wherein a first separation distance between the at least one pair of second semiconductor chips is smaller than a second separation distance between the at least one pair of third semiconductor chips.
18 . The semiconductor package of claim 15 , wherein the first conductive structure comprises a pattern portion extending in the second direction, and a via portion extending from the pattern portion perpendicularly to the first rear surface and electrically connected to the second connection pads or the through electrodes.
19 . A semiconductor package, comprising:
a first semiconductor chip having a first front surface and an opposing first rear surface, the first semiconductor chip including first connection pads on the first front surface, and through electrodes extending perpendicularly to the first rear surface and electrically connected to at least a portion of the first connection pads;
a second semiconductor chip having a second front surface and an opposing second rear surface, the second semiconductor chip including second connection pads on the second front surface and on the first rear surface so that the second rear surface faces the first semiconductor chip;
conductive structures including a pattern portion extending in parallel to the first rear surface on the second semiconductor chip, and a via portion extending from the pattern portion and connected to the second connection pads or the through electrodes;
a dielectric layer on the first rear surface of the first semiconductor chip, the second semiconductor chip, and the conductive structures; and
an encapsulation layer on the first rear surface of the first semiconductor chip and a side surface of the dielectric layer.
20 . The semiconductor package of claim 19 , wherein the dielectric layer comprises a first dielectric layer on the second front surface and the side surface of the second semiconductor chip, and a second dielectric layer on the first dielectric layer, and
the pattern portion of the conductive structures is between the first dielectric layer and the second dielectric layer, and the via portion penetrates through the first dielectric layer.