IP Library Granted Patent US 12,566,033
Granted Patent B2
US 12,566,033 · App. 18/533,945 · Granted Mar 3, 2026

Three-dimensional vapor chamber device

Inventors: Cheng-Tu Wang (New Taipei, TW); Pang-Hung Liao (New Taipei, TW); Chih-Wei Chen (New Taipei, TW)
Assignee: JWS TECHNOLOGY CO., LTD.
F28D15/043F28D15/046F28F2215/04
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Quick Facts
Patent No.
US 12,566,033
App. No.
18/533,945
Granted
Mar 3, 2026
Kind
B2
Abstract

This disclosure is directed to a three-dimensional vapor chamber device having a thermal base, a vertical thermal plate arranged up-right on the thermal base, and a working fluid accommodated in the thermal base and may flow to the vertical thermal plate. A first chamber having a first capillary structure is defined in the thermal base. A second chamber having a second capillary structure is defined in the vertical thermal plate. The first chamber and the second chamber are connected with an inlet and a return port. The second chamber has a flow channel structure connected between the inlet and the return port. The working fluid may flow to the second chamber through the inlet, pass the flow channel structure and return to the first chamber through the return port, so to define a specific flow path leading to a desirable and stable heat transfer efficiency.

Claims (11)

1 . A three-dimensional vapor chamber device, comprising:

a thermal conductive base, comprising a heat exchanging surface, a heat defusing surface opposite to the heat exchanging surface, a heat exchanging area defined on the heat exchanging surface, a first chamber defined in the thermal conductive base, and a first capillary structure attached on an internal surface of the first chamber;

a vertical thermal plate, up-right disposed on the heat defusing surface, comprising a second chamber defined in the vertical thermal plate, a second capillary structure attached on an internal surface of the second chamber and an extended segment parallel to the heat defusing surface and extended outside a boundary of the thermal conductive base, the first chamber communicating with the second chamber through an inlet and a return port, a flow channel structure disposed in the second chamber, the flow channel structure communicating between the inlet and the return port;

a working fluid, accommodated in the first chamber, and configured to flow to the second chamber through the inlet, pass the flow channel structure and flow back to the first chamber through the return port;

a fin assembly, disposed on an external surface of the vertical thermal plate and disposed in a boundary of the thermal conductive base; and

another fin assembly, arranged on the extended segment and dispose d outside a boundary of the thermal conductive base.

2 . The three-dimensional vapor chamber device according to claim 1 , wherein a flow resistance of the working fluid from the heat exchanging area to the return port is greater than a flow resistance of the working fluid from the heat exchanging area to the inlet.

3 . The three-dimensional vapor chamber device according to claim 1 , wherein a distance between the heat exchanging area and the inlet is less than a distance between the heat exchanging area and the return port.

4 . The three-dimensional vapor chamber device according to claim 1 , wherein a resistance structure is arranged at the return port.

5 . The three-dimensional vapor chamber device according to claim 4 , wherein the resistance structure comprises a plurality of pores.

6 . The three-dimensional vapor chamber device according to claim 4 , wherein the resistance structure is extended from the first capillary structure.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 8, 2023
From: WANG, CHENG-TU; LIAO, PANG-HUNG; CHEN, CHIH-WEI
To: JWS TECHNOLOGY CO., LTD.
Reel/Frame 065814/0445 →
Continuity (1)
Related Publication 20250189239A1 · Jun 12, 2025
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