Semiconductor device
An example semiconductor device includes a plurality of analog-to-digital converters (ADCs) configured to receive an analog signal from at least one amplifier connected to a pad, and a logic circuit configured to control the plurality of ADCs. The logic circuit is configured to activate first active ADCs, among the plurality of ADCs, in a first operating mode, and to activate second active ADCs, among the plurality of ADCs, in a second operating mode different from the first operating mode. A first latency required for the first active ADCs to receive the analog signal and to output a first digital signal is longer than a second latency required for the second active ADCs to receive the analog signal and to output a second digital signal.
1 . A semiconductor device comprising:
an amplifier connected to a pad, the amplifier configured to receive an analog signal;
a plurality of analog-to-digital converters (ADCs) connected in parallel to an output terminal of the amplifier;
an equalizer connected to a plurality of output terminals of the plurality of ADCs;
a first phase detector connected to an output terminal of the equalizer;
a second phase detector connected to the plurality of output terminals of the plurality of ADCs; and
a clock generator configured to output a clock signal to each ADC of the plurality of ADCs with reference to an output of the first phase detector or an output of the second phase detector,
wherein the equalizer is configured to activate in a first operating mode, and deactivate in a second operating mode, the second operating mode being different from the first operating mode, and
wherein the clock generator is configured to:
output the clock signal with reference to the output of the first phase detector in the first operating mode, and
output the clock signal with reference to the output of the second phase detector in the second operating mode.
2 . The semiconductor device of claim 1 , wherein
a plurality of first active ADCs, among the plurality of ADCs, are configured to activate in the first operating mode, and a plurality of second active ADCs, among the plurality of ADCs, are configured to activate in the second operating mode, and
the number of the first active ADCs is greater than the number of the second active ADCs.
3 . The semiconductor device of claim 2 , wherein
in the first operating mode, each first active ADC of the plurality of first active ADCs is configured to output N-bit data per first sampling period, N being a natural number greater than 2, and
in the second operating mode, each second active ADC of the plurality of second active ADCs is configured to output 1-bit data per second sampling period.
4 . The semiconductor device of claim 3 , wherein the first sampling period is longer than the second sampling period.
5 . The semiconductor device of claim 2 , comprising:
a digital processing circuit configured to receive a plurality of outputs of the plurality of ADCs,
wherein, in the first operating mode, an output of each first active ADC of the plurality of first active ADCs is transmitted to the digital processing circuit via the equalizer, and
wherein, in the second operating mode, an output of each second active ADC of the plurality of second active ADCs passes the equalizer and is transmitted to the digital processing circuit.
6 . The semiconductor device of claim 2 , wherein some second active ADCs, among the plurality of second active ADCs, are configured to sample data transmitted via the analog signal, and the remaining second active ADCs, among the plurality of second active ADCs, are configured to sample an edge of the analog signal.
7 . The semiconductor device of claim 6 , wherein the number of the some second active ADCs is equal to the number of the remaining second active ADCs.
8 . The semiconductor device of claim 1 , wherein the clock generator is configured to:
output a plurality of first clock signals in the first operating mode, the plurality of first clock signals having a plurality of different phases, and
output a plurality of second clock signals in the second operating mode, the plurality of second clock signals having a plurality of different phases, and
wherein a frequency of each first clock signal of the plurality of first clock signals is lower than a frequency of each second clock signal of the plurality of second clock signals.
9 . The semiconductor device of claim 1 , wherein the first phase detector is a Mueller-Muller phase detector, and the second phase detector is a bang-bang phase detector.
10 . The semiconductor device of claim 1 , wherein the analog signal is a pulse amplitude modulation (PAM)-4 signal.
11 . A semiconductor device comprising:
a plurality of analog-to-digital converters (ADCs) connected to each other in parallel, the plurality of ADCs configured to receive an analog signal;
a clock generator configured to provide a plurality of clock signals to the plurality of ADCs, respectively, the plurality of clock signals having a plurality of different phases; and
a logic circuit configured to control the plurality of ADCs,
wherein each ADC of the plurality of ADCs includes a capacitor digital-to-analog converter (CDAC) and a comparator, the CDAC including a plurality of capacitors and a plurality of switches, and the comparator configured to receive an output of the CDAC and to output digital data,
wherein a first number of first active ADCs, among the plurality of ADCs, are configured to activate based on a first operating mode being selected, and a second number of second active ADCs, less than the first number of first active ADCs, are configured to activate based on a second operating mode, different from the first operating mode, being selected, and
wherein the logic circuit is configured to control the CDAC and the comparator in each first active ADC of the first active ADCs to perform a successive approximation operation, and to perform an offset cancellation operation on the CDAC in each second active ADC of the second active ADCs.
12 . The semiconductor device of claim 11 , wherein
the analog signal includes a first analog signal and a second analog signal, the first analog signal and the second analog signal having phases opposite to each other, and
each ADC of the plurality of ADCs includes a first CDAC and a second CDAC, the first CDAC configured to receive the first analog signal and at least one reference voltage, and the second CDAC configured to receive the second analog signal and the at least one reference voltage.
13 . The semiconductor device of claim 11 , wherein the analog signal is a multilevel signal in the first operating mode, and the analog signal is a non-return to zero (NRZ) signal in the second operating mode.
14 . The semiconductor device of claim 11 , wherein an operating frequency of each first active ADC of the first active ADCs is lower than an operating frequency of each second active ADC of the second active ADCs.
15 . The semiconductor device of claim 11 , wherein two or more ADCs, among the plurality of ADCs, are configured to share a switch element and a sampling capacitor.
16 . The semiconductor device of claim 15 , wherein
in the first operating mode, the switch element are repeatedly turned-on and turned-off by a switch clock signal at a predetermined switching frequency, and
in the second operating mode, the switch element is maintained in a turn-on state.
17 . The semiconductor device of claim 16 , wherein the predetermined switching frequency is higher than an operating frequency of each first active ADC of the first active ADCs.
18 . A semiconductor device comprising:
a plurality of analog-to-digital converters (ADCs) configured to receive an analog signal from at least one amplifier, the at least one amplifier being connected to a pad; and
a logic circuit configured to control the plurality of ADCs,
wherein the logic circuit is configured to activate a plurality of first active ADCs, among the plurality of ADCs, in a first operating mode, and to activate a plurality of second active ADCs, among the plurality of ADCs, in a second operating mode, the second operating mode being different from the first operating mode, and
wherein a first latency for the first plurality of active ADCs to receive the analog signal and to output a first digital signal is longer than a second latency for the plurality of second active ADCs to receive the analog signal and to output a second digital signal.
19 . The semiconductor device of claim 18 , comprising:
a clock generator configured to a plurality of output clock signals to the plurality of ADCs, the plurality of output clock signals having a plurality of different phases,
wherein a frequency of each first clock signal of a plurality of first clock signals, input to the plurality of first active ADCs in the first operating mode, is lower than a frequency of each second clock signal of a plurality of second clock signals, input to the plurality of second active ADCs in the second operating mode.
20 . The semiconductor device of claim 18 , wherein the number of the plurality of first active ADCs is greater than the number of the plurality of second active ADCs.