Granted Patent B2

US 12,575,164 · App. 17/899,071 · Granted Mar 10, 2026

Inventor: Samuel Menard (Chauray, FR)

Assignee: STMICROELECTRONICS (TOURS) SAS

H10D64/64H10D10/221H10D10/40H10D18/00H10D18/80H10D64/231H10D62/83H10D64/62

Abstract

Claims (48)

1 . A device, comprising:

a first semiconductor layer having a first surface and a second surface opposite to the first surface, the first semiconductor layer having a first conductivity type with a first concentration;

a first region and a second region in the first semiconductor layer at the first surface, the first and second regions having the first conductivity type with a second concentration, the first region being spaced from the second region by a third region at the first surface of the first semiconductor layer having the first conductivity type with the first concentration;

a second semiconductor layer on the second surface of the first semiconductor layer, the second semiconductor layer having a second conductivity type;

a third semiconductor layer having the first conductivity type and is spaced from the first semiconductor layer by the second semiconductor layer, the third semiconductor layer having a third surface facing away from the first semiconductor layer; and

a fourth region and a fifth region in the third semiconductor layer at the third surface, the fourth region and the fifth region having the first conductivity type with the second concentration.

2 . The device of claim 1 , further comprising a first electrode on the first region, fully covering the first region, and partially on the third region.

3 . The device of claim 2 , further comprising a second electrode on the second region, fully covering the second region and partially on the third region, the second electrode spaced apart from the first electrode.

4 . The device of claim 3 , further comprising a third electrode on the fourth region and fully covering the fourth region.

5 . The device of claim 4 , further comprising a fourth electrode on the fifth region and fully covering the fifth region.

6 . The device of claim 1 , further comprising a first sidewall and a second sidewall opposite to the first sidewall, and wherein the first region of the first surface of the first semiconductor layer is at a first sidewall and the second region of the first surface of the first semiconductor layer is at the second sidewall.

7 . The device of claim 6 , wherein:

the first sidewall includes respective sidewalls of the first region, the third region, the second semiconductor layer, the third semiconductor layer, and a third electrode; and

the second sidewall includes respective sidewalls of the second region, the third region, the second semiconductor layer, the third semiconductor layer, and the third electrode.

8 . The device of claim 1 , wherein:

the third semiconductor layer includes a sixth region at the first surface of the first semiconductor layer having the first conductivity type with the first concentration; and

the fourth region is spaced from the fifth region by the sixth region.

9 . The device of claim 8 , further comprising:

a first electrode on the first region, fully covering the first region, and partially on the third region.

10 . The device of claim 9 , further comprising a second electrode on the second region, fully covering the second region and partially on the third region, the second electrode spaced apart from the first electrode.

11 . The device of claim 10 , further comprising a third electrode on the fourth region and fully covering the fourth region.

12 . The device of claim 11 , further comprising a fourth electrode on the fifth region and fully covering the fifth region, and partially on the sixth region.

13 . The device of claim 8 , wherein:

the third region fully extends from a first end of the first region to a second end of the second region; and

the sixth region fully extends from a third end of the fourth region to a fourth end of the fifth region.

14 . A device, comprising:

a first layer of a first conductivity type of a first concentration having a first surface and a second surface opposite to the first surface;

a first region in the first layer and at the first surface, the first region having the first conductivity type of a second concentration, and the second concentration is greater than the first concentration;

a second region in the first layer and at the first surface, the second region having the first conductivity type of the second concentration;

a second layer of a second conductivity type on the second surface of the first layer, the second conductivity type being different than the first conductivity type;

a third layer of the first conductivity type of the first concentration having a third surface and a fourth surface opposite to the third surface, the fourth surface having the first concentration of the first conductivity type, the third surface is covered by the second layer, and a third region in the fourth surface, and the third region has the first conductivity type of the second concentration;

a first electrode on and abuts the first region and on the first surface;

a second electrode on and abuts the second region and on the first surface; and

a third electrode on the fourth surface, and the third electrode abuts the fourth surface of the third layer and abuts the third region in the fourth surface.

15 . The device of claim 14 , further comprising a first sidewall and a second sidewall opposite to the first sidewall, and wherein the first region at the first surface of the first layer is at a first sidewall and the second region at the first surface of the first layer is at the second sidewall.

16 . The device of claim 14 , further comprising a first sidewall and a second sidewall opposite to the first sidewall, and wherein the first region at the first surface of the first layer is at a first sidewall and the second region at the first surface of the first layer is spaced inward from the second sidewall.

17 . The device of claim 14 , further comprising a fourth region in the third layer and at the fourth surface of the third layer, the fourth region having the first conductivity type of the second concentration.

18 . The device of claim 17 , wherein the third electrode is on the fourth region and fully covers the fourth region.

19 . A device, comprising:

a first layer of a first conductivity type of a first concentration;

a first region in the first layer, the first region having the first conductivity type of a second concentration;

a first electrode on the first layer and in contact with the first concentration and the second concentration;

a second layer of the first conductivity type of the first concentration;

a second region in the second layer, the second region having the first conductivity type of the second concentration;

a second electrode on the second layer and in contact with the first concentration and the second concentration;

a third region in the second layer having the second concentration, the third region being spaced from the second region; and

a fourth region in the first layer and having the second concentration, the fourth region being spaced from the first region.

20 . The device of claim 19 , further comprising a third electrode on the third region and a fourth electrode on the fourth region.

Priority Claims (1)

Continuity (2)

References Cited (63)