IP Library › Granted Patent US 12,577,430
Granted Patent B2
US 12,577,430 · App. 17/802,773 · Granted Mar 17, 2026

Polishing composition containing zirconia particles and an oxidizer

Inventor: Jie Lin (Kiyosu, JP)
Assignee: FUJIMI INCORPORATED
C09G1/02C01G25/02C01P2004/64
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Quick Facts
Patent No.
US 12,577,430
App. No.
17/802,773
Granted
Mar 17, 2026
Kind
B2
Abstract

Provided herein are CMP compositions, and methods for polishing surfaces comprising amorphous carbon, spin-on carbon (SoC), and/or diamond like carbon (DLC) films. The CMP compositions of the present disclosure contain at least one abrasive having zirconia particles and may also contain at least one metal-containing oxidizer.

Claims (19)

1 . A method of manufacturing a polished polishing object, comprising polishing a polishing object comprising spin-on carbon (SoC) or diamond like carbon (DLC) using a chemical mechanical polishing (CMP) composition comprising an abrasive comprising zirconia particles and a metal-containing oxidizer and wherein an average primary particle size of the zirconia particles is about 3 to 110 nm, and an average secondary particle size of the zirconia particles is about 20 nm to about 2000 nm.

2 . A method of manufacturing a polished polishing object, comprising polishing a polishing object comprising spin-on carbon (SoC) or diamond like carbon (DLC) using a chemical mechanical polishing (CMP) composition comprising an abrasive comprising zirconia particles and a metal-containing oxidizer and wherein the metal-containing oxidizer is present in an amount of about 0.05 mM or more with respect to the chemical mechanical polishing (CMP) composition.

3 . A method of manufacturing a polished polishing object, comprising polishing a polishing object comprising spin-on carbon (SoC) or diamond like carbon (DLC) using a chemical mechanical polishing (CMP) composition comprising an abrasive comprising zirconia particles and a metal-containing oxidizer and wherein the zirconia particles comprise calcined zirconia.

4 . A method of manufacturing a polished polishing object, comprising polishing a polishing object comprising spin-on carbon (SoC) or diamond like carbon (DLC) using a chemical mechanical polishing (CMP) composition comprising an abrasive comprising zirconia particles and a metal-containing oxidizer and wherein the zirconia particles are doped with yttria.

5 . The method of claim 4 , wherein the zirconia particles are doped with more than 9 mol % of yttria.

6 . The method of claim 1 , wherein the composition has a pH of about 2 to about 7.

7 . The method of claim 1 , wherein the zirconia particles are present in an amount of about 0.01 wt. % or more with respect to the chemical mechanical polishing (CMP) composition.

8 . The method of claim 1 , wherein the zirconia particles are present in an amount of about 4.0 wt. % or less with respect to the chemical mechanical polishing (CMP) composition.

9 . The method of claim 1 , wherein the zirconia particles comprise colloidal zirconia.

10 . The method of claim 2 , wherein the metal-containing oxidizer comprises an element selected from the group consisting of manganese, cerium, vanadium, and iron.

11 . The method of claim 2 , wherein the metal-containing oxidizer is selected from the group consisting of KMnO 4 , (NH 4 ) 2 Ce(NO 3 ) 6 , NaVO 3 , NH 4 VO 3 , and Fe(NO 3 ) 3 .

12 . The method of claim 2 , wherein the composition has a pH of about 2 to about 7.

13 . The method of claim 3 , wherein the composition has a pH of about 2 to about 7.

14 . The method of claim 3 , wherein the zirconia particles are present in an amount of about 0.01 wt. % or more with respect to the chemical mechanical polishing (CMP) composition.

15 . The method of claim 3 , wherein the zirconia particles are present in an amount of about 4.0 wt. % or less with respect to the chemical mechanical polishing (CMP) composition.

16 . The method of claim 4 , wherein the composition has a pH of about 2 to about 7.

17 . The method of claim 4 , wherein the zirconia particles are present in an amount of about 0.01 wt. % or more with respect to the chemical mechanical polishing (CMP) composition.

18 . The method of claim 4 , wherein the zirconia particles are present in an amount of about 4.0 wt. % or less with respect to the chemical mechanical polishing (CMP) composition.

19 . The method of claim 4 , wherein the zirconia particles comprise colloidal zirconia.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 26, 2022
From: LIN, JIE
To: FUJIMI INCORPORATED
Reel/Frame 060914/0582 →
Continuity (3)
Continuation In Part 17100072 · Nov 20, 2020
Continuation In Part 16805037 · Feb 28, 2020
Related Publication 20230081442A1 · Mar 16, 2023
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