Chemical-mechanical polishing composition containing zirconia and metal oxidizer
The invention provides a chemical-mechanical polishing composition and a method of chemically-mechanically polishing a substrate with the chemical-mechanical polishing composition. The polishing composition comprises (a) abrasive particles, wherein the abrasive particles comprise zirconia, (b) at least one metal ion oxidizer, wherein the at least one metal ion oxidizer comprises metal ions of Co 3+ , Au + , Ag + , Pt 2+ , Hg 2+ , Cr 3+ , Fe 3+ , Ce 4+ , or Cu 2+ , and (c) an aqueous carrier, wherein the pH of the chemical-mechanical polishing composition is in the range of about 1 to about 7, and wherein the chemical-mechanical polishing composition does not contain a peroxy-type oxidizer.
1. A method of polishing a substrate comprising:
(i) providing a substrate, wherein the substrate comprises polybenzoxazole;
(ii) providing a polishing pad;
(iii) providing a chemical-mechanical polishing composition comprising:
(a) abrasive particles, wherein the abrasive particles comprise zirconia,
(b) at least one metal ion oxidizer, wherein the at least one metal ion oxidizer comprises metal ions of Co 3+ , Au + , Ag + , Pt 2+ , Hg 2+ , Cr 3+ , Fe 3+ , Ce 4+ , or Cu 2+ , wherein the at least one metal ion oxidizer is present in the chemical-mechanical polishing composition at a concentration of about 0.025 wt. % to about 0.5 wt. %, and
(c) an aqueous carrier,
wherein the pH of the chemical-mechanical polishing composition is in the range of about 1 to about 7, and wherein the chemical-mechanical polishing composition does not contain a peroxy-type oxidizer;
(iv) contacting the substrate with the polishing pad and the chemical-mechanical polishing composition; and
(v) moving the polishing pad and the chemical-mechanical polishing composition relative to the substrate to abrade at least a portion of the organic polymer film on a surface of the substrate to polish the substrate.
2. The method of claim 1 , wherein the organic polymer film has a dielectric constant of about 2.5 or more.
3. The method of claim 1 , wherein the at least one metal ion oxidizer comprises Fe 3+ .
4. The method of claim 1 , wherein the at least one metal ion oxidizer comprises Ce 4+ .
5. The method of claim 1 , wherein the at least one metal ion oxidizer is cerium ammonium nitrate.
6. The method of claim 1 , wherein the abrasive particles consist of zirconia.
7. The method of claim 1 , wherein the abrasive particles are present in the chemical-mechanical polishing composition at a concentration of about 0.5 wt. % to about 3 wt. %.
8. The method of claim 1 , wherein the chemical-mechanical polishing composition further comprises at least one complexing agent.
9. The method of claim 8 , wherein the at least one complexing agent is a mono-, di-, tri- or poly-carboxylic acid, an amine-containing compound, or a mono-, di-, tri-, or poly-phosphonic acid.
10. The method of claim 9 , wherein the at least one complexing agent is picolinic acid.
11. The method of claim 1 , wherein the chemical-mechanical polishing composition further comprises a corrosion inhibitor.
12. The method of claim 1 , wherein the pH of the chemical-mechanical polishing composition is in the range of about 2 to about 3.5.
13. A method of polishing a substrate comprising:
(i) providing a substrate, wherein the substrate comprises a phase change alloy (PCA);
(ii) providing a polishing pad;
(iii) providing a chemical-mechanical polishing composition comprising:
(a) abrasive particles, wherein the abrasive particles comprise zirconia,
(b) at least one metal ion oxidizer, wherein the at least one metal ion oxidizer comprises metal ions of Co 3+ , Au + , Ag + , Pt 2+l , Hg 2+ , Cr 3+ , Fe 3+l, Ce 4+ , or Cu 2+ , and
(c) an aqueous carrier,
wherein the pH of the chemical-mechanical polishing composition is in the range of about 1 to about 7, and wherein the chemical-mechanical polishing composition does not contain a peroxy-type oxidizer;
(iv) contacting the substrate with the polishing pad and the chemical-mechanical polishing composition; and
(v) moving the polishing pad and the chemical-mechanical polishing composition relative to the substrate to abrade at least a portion of the PCA on the surface of a substrate to polish the substrate.
14. The method of claim 13 , wherein the phase change alloy (PCA) comprises germanium-antimony-tellurium (GST).
15. The method of claim 13 , wherein the at least one metal ion oxidizer comprises Fe 3+ .
16. The method of claim 13 , wherein the at least one metal ion oxidizer comprises Ce 4+ .
17. The method of claim 13 , wherein the at least one metal ion oxidizer is cerium ammonium nitrate.
18. The method of claim 13 , wherein the abrasive particles consist of zirconia.
19. The method of claim 13 , wherein the abrasive particles are present in the chemical-mechanical polishing composition at a concentration of about 0.5 wt. % to about 3 wt. %.
20. The method of claim 13 , wherein the at least one metal ion oxidizer is present in the chemical-mechanical polishing composition at a concentration of about 0.025 wt. % to about 0.5 wt. %.
21. The method of claim 13 , wherein the chemical-mechanical polishing composition further comprises at least one complexing agent.
22. The method of claim 21 , wherein the at least one complexing agent is a mono-, di-, tri- or poly-carboxylic acid, an amine-containing compound, or a mono-, di-, tri-, or poly-phosphonic acid.
23. The method of claim 22 , wherein the at least one complexing agent is picolinic acid.
24. The method of claim 13 , wherein the chemical-mechanical polishing composition further comprises a corrosion inhibitor.
25. The method of claim 13 , wherein the pH of the chemical-mechanical polishing composition is in the range of about 2 to about 3.5.