Semiconductor device
A semiconductor device with a novel structure is provided. The semiconductor device includes a current-to-voltage conversion portion, a current switch portion, a voltage-to-current conversion portion, and a control portion. The current switch portion includes a first transistor. The voltage-to-current conversion portion includes a second transistor. The control portion includes a third transistor. The first transistor includes an oxide semiconductor in a channel formation region. The second transistor includes a nitride semiconductor in a channel formation region. The third transistor includes silicon in a channel formation region. The first transistor is provided over a first substrate. The second transistor and the third transistor are provided over a second substrate.
1 . A semiconductor device comprising:
a current-to-voltage conversion portion;
a current switch portion; and
a voltage-to-current conversion portion,
wherein the current switch portion includes a first transistor,
wherein the voltage-to-current conversion portion includes a second transistor,
wherein the first transistor includes an oxide semiconductor in a channel formation region,
wherein the second transistor includes a nitride semiconductor in a channel formation region, and
wherein the first transistor is above the second transistor.
2 . The semiconductor device according to claim 1 , wherein the current-to-voltage conversion portion includes a resistor.
3 . The semiconductor device according to claim 1 ,
wherein the voltage-to-current conversion portion includes a fourth transistor and an inductor,
wherein one of a source and a drain of the fourth transistor is electrically connected to a first terminal of the inductor,
wherein a second terminal of the inductor is electrically connected to a gate of the second transistor, and
wherein the fourth transistor includes an oxide semiconductor in a channel formation region.
4 . The semiconductor device according to claim 1 , wherein frequency of a signal supplied to a gate of the first transistor is higher than frequency of a signal supplied to the gate of the second transistor.
5 . The semiconductor device according to claim 1 , wherein the oxide semiconductor contains indium, gallium, and zinc.
6 . The semiconductor device according to claim 1 , wherein the nitride semiconductor contains gallium.
7 . A semiconductor device comprising:
a current-to-voltage conversion portion;
a current switch portion;
a voltage-to-current conversion portion; and
a control portion,
wherein the current switch portion includes a first transistor,
wherein the voltage-to-current conversion portion includes a second transistor,
wherein the control portion includes a third transistor,
wherein the first transistor includes an oxide semiconductor in a channel formation region,
wherein the second transistor includes a nitride semiconductor in a channel formation region,
wherein the third transistor includes silicon in a channel formation region, and
wherein the first transistor is above the second transistor and the third transistor.
8 . The semiconductor device according to claim 7 , wherein the current-to-voltage conversion portion includes a resistor.
9 . The semiconductor device according to claim 7 ,
wherein the voltage-to-current conversion portion includes a fourth transistor and an inductor,
wherein one of a source and a drain of the fourth transistor is electrically connected to a first terminal of the inductor,
wherein a second terminal of the inductor is electrically connected to a gate of the second transistor, and
wherein the fourth transistor includes an oxide semiconductor in a channel formation region.
10 . The semiconductor device according to claim 7 , wherein frequency of a signal supplied to a gate of the first transistor is higher than frequency of a signal supplied to the gate of the second transistor.
11 . The semiconductor device according to claim 7 , wherein the oxide semiconductor contains indium, gallium, and zinc.
12 . The semiconductor device according to claim 7 , wherein the nitride semiconductor contains gallium.
13 . A semiconductor device comprising:
a current-to-voltage conversion portion;
a current switch portion;
a voltage-to-current conversion portion; and
a control portion,
wherein the current switch portion includes a first transistor,
wherein the voltage-to-current conversion portion includes a second transistor,
wherein the control portion includes a third transistor,
wherein the first transistor includes an oxide semiconductor in a channel formation region,
wherein the second transistor includes a nitride semiconductor in a channel formation region,
wherein the third transistor includes silicon in a channel formation region,
wherein the first transistor is provided over a first substrate,
wherein the second transistor and the third transistor are provided over a second substrate, and
wherein when the first substrate is attached to the second substrate, the first transistor to the third transistor are electrically connected.
14 . The semiconductor device according to claim 13 , wherein the current-to-voltage conversion portion includes a resistor.
15 . The semiconductor device according to claim 13 ,
wherein the voltage-to-current conversion portion includes a fourth transistor and an inductor,
wherein one of a source and a drain of the fourth transistor is electrically connected to a first terminal of the inductor,
wherein a second terminal of the inductor is electrically connected to a gate of the second transistor, and
wherein the fourth transistor includes an oxide semiconductor in a channel formation region.
16 . The semiconductor device according to claim 13 , wherein frequency of a signal supplied to a gate of the first transistor is higher than frequency of a signal supplied to the gate of the second transistor.
17 . The semiconductor device according to claim 13 , wherein the oxide semiconductor contains indium, gallium, and zinc.
18 . The semiconductor device according to claim 13 , wherein the nitride semiconductor contains gallium.