Method of processing substrate, method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
There is provided a technique that includes (a) supplying a fluorine-containing gas to a substrate including a first surface and a second surface; (b) supplying an oxygen- and hydrogen-containing gas and a catalyst to the substrate after performing (a); (c) supplying a modifying agent to the substrate after performing (b); and (d) supplying a film-forming agent to the substrate after performing (c).
1 . A method of processing a substrate, comprising:
(a) supplying a fluorine-containing gas to the substrate including a first surface and a second surface;
(b) supplying an oxygen- and hydrogen-containing gas and a catalyst to the substrate after performing (a);
(c) supplying a modifying agent to the substrate after performing (b); and
(d) supplying a film-forming agent to the substrate after performing (c),
wherein the fluorine-containing gas is HF gas, and the oxygen- and hydrogen-containing gas is H 2 O gas.
2 . The method of claim 1 , wherein in (a), a native oxide film formed on the second surface is removed, and
wherein in (b), fluorine adsorbed on a surface of the substrate is removed and an OH termination is formed on the first surface.
3 . The method of claim 1 , wherein (b) is performed under a condition that formation of an OH termination on the second surface is suppressed and an OH termination is formed on the first surface.
4 . The method of claim 1 , wherein (b) is performed under a condition that oxidation of the second surface is suppressed and an OH termination is formed on the first surface.
5 . The method of claim 1 , wherein (b) is performed under a condition that an amount of OH termination formed on the second surface is smaller than an amount of OH termination formed on the first surface.
6 . The method of claim 1 , wherein in (c), the first surface is modified to form a film-formation inhibiting layer by adsorbing at least a portion of a molecular structure of molecules constituting the modifying agent on the first surface.
7 . The method of claim 1 , wherein in (d), a film is formed on the second surface.
8 . The method of claim 1 , wherein the film-forming agent includes a precursor, a catalyst, and an oxidizing agent.
9 . The method of claim 8 , wherein (d) includes performing a cycle a predetermined number of times, the cycle including non-simultaneously performing:
(d 1 ) supplying the precursor or the precursor and the catalyst to the substrate; and
(d 2 ) supplying the oxidizing agent and the catalyst to the substrate.
10 . The method of claim 9 , wherein the oxidizing agent is an oxygen- and hydrogen-containing gas, and
wherein a condition for supplying the oxygen- and hydrogen-containing gas and the catalyst in (b) is set to be different from a condition for supplying the oxidizing agent and the catalyst in (d 2 ).
11 . The method of claim 9 , wherein the oxidizing agent is an oxygen- and hydrogen-containing gas, and
wherein a time for supplying the oxygen- and hydrogen-containing gas and the catalyst in (b) is set to be longer than a time for supplying the oxidizing agent and the catalyst in (d 2 ).
12 . The method of claim 1 , wherein (a), (b), (c), and (d) are performed in a same process chamber.
13 . The method of claim 1 , wherein (b) is performed:
simultaneously with performing (a);
after performing (a); or
simultaneously with and after performing (a).
14 . The method of claim 1 , wherein (a) is started prior to (b).
15 . The method of claim 1 , wherein (a) is completed prior to (b).
16 . The method of claim 1 , wherein the first surface contains an oxygen-containing material, and the second surface contains an oxygen-free material.
17 . A method of manufacturing a semiconductor device comprising the method of claim 1 .