Selective inhibition for selective metal deposition
A method for processing a substrate includes treating the substrate with a small molecular inhibitor (SMI), the substrate including a recess formed in a dielectric layer and a first metal layer in the recess, the SMI covering a surface of the first metal layer. The method further includes, after treating the substrate with the SMI, treating the substrate with a large molecular inhibitor (LMI), the LMI covering sidewalls of the dielectric layer in the recess. The method further includes heating the substrate to remove the SMI from the first metal layer and to expose the first metal layer in the recess, where the LMI remains on the sidewalls after removing the SMI from the first metal layer. The method further includes depositing a second metal over the first metal layer in the recess, where the LMI covering the sidewalls prevents deposition of the second metal on the dielectric layer.
1 . A method for processing a substrate, the method comprising:
treating the substrate with a small molecular inhibitor (SMI), the substrate comprising a recess formed in a dielectric layer and a first metal layer in the recess, the SMI selectively adsorbed on the first metal layer and covering a surface of the first metal layer;
after treating the substrate with the SMI, treating the substrate with a large molecular inhibitor (LMI), the LMI selectively adsorbed over the dielectric layer and covering sidewalls of the dielectric layer in the recess, the LMI having a greater molecular weight or molecular volume than the SMI;
heating the substrate to remove the SMI from the first metal layer and to expose the first metal layer in the recess, wherein the LMI remains on the sidewalls after removing the SMI from the first metal layer; and
depositing a second metal over the first metal layer in the recess, wherein the LMI covering the sidewalls prevents deposition of the second metal on the dielectric layer, a deposition rate of the second metal over the first metal layer being at least 100 times as high as the deposition rate of the second metal over the dielectric layer.
2 . The method of claim 1 , wherein the substrate further comprises a surface oxide layer over the first metal layer, further comprising, prior to treating the substrate with the SMI, removing the surface oxide layer to expose the first metal layer in the recess.
3 . The method of claim 1 , wherein depositing the second metal deposits second metal nuclei on a portion of the sidewalls, further comprising removing the second metal nuclei.
4 . The method of claim 1 , wherein depositing the second metal is achieved bottom-up from the first metal layer without the second metal growing from the dielectric layer.
5 . The method of claim 1 , wherein heating the substrate comprises heating the substrate to a temperature between 250° C. and 400° C.
6 . The method of claim 1 , wherein heating the substrate comprising exposing the substrate to a gas comprising dihydrogen (H 2 ).
7 . The method of claim 1 , wherein the SMI comprises a nitrogen-containing compound.
8 . The method of claim 7 , wherein the nitrogen-containing compound comprises NH 3 , N 2 H 4 , or an aromatic compound.
9 . The method of claim 1 , wherein the SMI comprises R—PO 3 H, R—COOH, R—SH, or R—SO x .
10 . The method of claim 1 , wherein the LMI comprises an alkyl silane, an alkoxysilane, an alkyl alkoxysilane, an alkyl siloxane, an alkoxysiloxane, an alkyl alkoxysiloxane, an aryl silane, an acyl silane, an aryl siloxane, an acyl siloxane, a silazane, dimethylsilane dimethylamine (DMSDMA), trimethylsilane dimethylamine (TMSDMA), bis(dimethylamino) dimethylsilane (BDMADMS), N,O bistrimethylsilyltrifluoroacetamide (BSTFA), or trimethylsilyl-pyrrole (TMS-pyrrole).
11 . The method of claim 1 , wherein the first metal layer comprises Ru, Co, or W, and wherein the second metal comprises Cu, Ru, Co, or W.
12 . A method for processing a substrate, the method comprising:
performing a cyclic chemical vapor deposition (CVD) process, the substrate comprising a dielectric layer having a recess and a first metal layer at a bottom of the recess, one cycle of the cyclic CVD process comprising:
treating the substrate with a small molecular inhibitor (SMI), the SMI selectively adsorbed on the first metal layer and covering a surface of a second metal formed over the first metal layer;
after treating the substrate with the SMI, treating the substrate with a large molecular inhibitor (LMI), the LMI selectively adsorbed over the dielectric layer and covering sidewalls of the dielectric layer in the recess, the LMI having a greater molecular weight or molecular volume than the SMI;
heating the substrate to remove the SMI from over the second metal and to expose the second metal, wherein the LMI remains on the sidewalls; and
depositing the second metal over the first metal layer in the recess, wherein the LMI covering the sidewalls prevents deposition of the second metal on the dielectric layer.
13 . The method of claim 12 , wherein depositing the second metal deposits second metal nuclei on a portion of the sidewalls, and wherein the one cycle of the cyclic CVD process further comprises removing the second metal nuclei from the portion of the sidewalls.
14 . The method of claim 12 , wherein the cyclic CVD process fills the recess without forming any void.
15 . The method of claim 12 , wherein the LMI comprises a silane, and the second metal that fills the recess is without any detectable silicon or silane impurity.
16 . A method for processing a substrate, the method comprising:
exposing the substrate to a first vapor comprising a small molecular inhibitor (SMI), the substrate comprising a dielectric surface and a first metal surface, the SMI adsorbing on the first metal surface selectively to the dielectric surface;
exposing the substrate to a second vapor comprising a large molecular inhibitor (LMI), the LMI selectively adsorbing on the dielectric surface, the adsorbed SMI preventing the LMI from adsorbing on the first metal surface;
removing the SMI from the first metal surface without removing the LMI from the dielectric surface; and
depositing a second metal over the first metal surface by chemical vapor deposition (CVD), wherein a deposition rate over the first metal surface is at least 100 times as high as a deposition rate over the dielectric surface.
17 . The method of claim 16 , wherein the removing comprises treating the substrate with a gas comprising dihydrogen (H 2 ) at a substrate temperature between 250° C. and 400° C.
18 . The method of claim 16 , wherein the first metal surface layer comprises Ru, Co, Mo, or W, and wherein the second metal comprises Cu, Ru, Co, Mo, or W.
19 . The method of claim 16 , wherein the SMI is silicon-free and the LMI comprises silicon.
20 . The method of claim 16 , wherein the substrate comprises a recess, the recess comprises the dielectric surface as sidewalls and the first metal surface as a bottom surface, the recess having a critical dimension (CD) between 10 nm and 65 nm.