Area selective deposition of hardmasks for vacuum gap formation
A method for vacuum gap formation on a dielectric substrate uses area selective deposition (ASD), such as atomic layer deposition (ALD) or chemical vapor deposition (CVD), of a hardmask material on a substrate patterned with a self-assembled monolayer (SAM) and metal features. Due to the presence of the SAM, the hardmask material reaches, but does not touch the metal features leaving areas that will form gaps on the resultant hardmask when the SAM is removed from the substrate. Etching of the dielectric substrate forms trenches in the areas of the gaps. When a non-conformal coating is deposited on the dielectric substrate, vacuum gaps form in the trenches as the non-conformal coating enters into the trenches, but closes off at the surface of the substrate prior to the complete filling of the trench.
1 . A method for forming a vacuum gap in a dielectric substrate comprising:
depositing a self-assembled monolayer with reactive head groups onto a dielectric substrate with metal features, wherein the reactive head groups bind to the metal features;
forming a hardmask on the dielectric substrate by area selective deposition of a hardmask material onto the dielectric substrate, wherein (i) due to the self-assembled monolayer bound to the metal features, the hardmask material reaches, but does not touch the metal features, (ii) the metal features and the hardmask material collectively form the hardmask, and (iii) the hardmask has gaps in areas located between the metal features and the selectively deposited hardmask material;
etching the dielectric substrate, wherein the etching forms trenches in the gaps defined by the hardmask and undercuts the hardmask at the trench opening resulting in trenches with depths that are greater than the trench opening widths; and
depositing a non-conformal coating onto the dielectric substrate, wherein the non-conformal coating closes the trench openings to create vacuum gaps in the trenches.
2 . The method of claim 1 , wherein the hardmask material is selectively deposited onto the dielectric substrate via atomic layer deposition or chemical vapor deposition.
3 . The method of claim 1 , wherein the self-assembled monolayer is removed from the metal features of the dielectric substrate with hydrogen plasma treatment following the selective deposition of the hardmask material.
4 . The method of claim 1 , wherein the etching removes the self-assembled monolayer from the metal features of the dielectric substrate.
5 . The method of claim 1 , wherein the hardmask is etched via a technique selected from the group consisting of reactive ion etching, deep reactive ion etching, plasma etching, vapor phase etching, sputter etching, and ion-beam etching.
6 . The method of claim 1 , wherein the dielectric substrate comprises a material selected from the group consisting of ceramic, glass, and silicon.
7 . The method of claim 1 , wherein the self-assembled monolayer comprises a material selected from the group consisting of alcohols, amines, carboxylic acids, disulfides, phosphates, phosphonates, organophosphonates, silanes, thiols, and combinations thereof.
8 . The method of claim 1 , wherein the hardmask material is selected from the group consisting of aluminum fluoride, aluminum oxide, lanthanum trifluoride, magnesium oxide, silicon dioxide, tantalum oxide, zinc oxide, and combinations thereof.
9 . The method of claim 1 , wherein the non-conformal coating comprises silica and/or silicon.
10 . A method for forming a vacuum gap in a dielectric substrate comprising:
depositing a self-assembled monolayer with a reactive head group that binds to copper onto a dielectric substrate with copper features;
forming a hardmask on the dielectric substrate by area selective deposition of zinc oxide onto the dielectric substrate, wherein (i) due to the self-assembled monolayer bound to the copper features, the hardmask material reaches, but does not touch the copper features, (ii) the copper features and the zinc oxide collectively form the hardmask, and (iii) the hardmask has gaps in areas located between the copper features and the selectively deposited zinc oxide;
etching the dielectric substrate, wherein the etching forms trenches in the gaps defined by the hardmask and undercuts the hardmask at the trench opening resulting in trenches with depths that are greater than the trench opening widths; and
depositing a non-conformal coating onto the dielectric substrate, wherein the non-conformal coating closes the trench openings to create vacuum gaps in the trenches.
11 . The method of claim 10 , wherein the reactive head group of the self-assembled monolayer is selected from the group consisting of organophosphonates, disulfides, thiols, and combinations thereof.
12 . The method of claim 10 , wherein the zinc oxide is selectively deposited onto the dielectric substrate via atomic layer deposition or chemical vapor deposition.
13 . The method of claim 10 , wherein the self-assembled monolayer is removed from the copper features of the dielectric substrate with hydrogen plasma treatment following the selective deposition of the zinc oxide.
14 . The method of claim 10 , wherein the etching removes the self-assembled monolayer from the copper features of the dielectric substrate.
15 . The method of claim 10 , wherein the hardmask is etched via a technique selected from the group consisting of reactive ion etching, deep reactive ion etching, plasma etching, vapor phase etching, sputter etching, and ion-beam etching.
16 . The method of claim 10 , wherein the dielectric substrate comprises a material selected from the group consisting of ceramic, glass, and silicon.
17 . The method of claim 10 , wherein the non-conformal coating is tetraethyl orthosilicate and/or silicon dioxide.
18 . A method for forming a vacuum gap in a dielectric substrate comprising:
depositing a self-assembled monolayer with reactive head groups onto a dielectric substrate with metal features, wherein the reactive head groups bind to the metal features;
forming a hardmask on the dielectric substrate by area selective deposition of a hardmask material onto the dielectric substrate, wherein (i) due to the self-assembled monolayer bound to the metal features, the hardmask material reaches, but does not touch the metal features, (ii) the metal features and the hardmask material collectively form the hardmask, and (iii) the hardmask has gaps in areas located between the metal features and the selectively deposited hardmask material;
removing the self-assembled monolayer from the dielectric substrate;
etching the dielectric substrate, wherein the etching forms trenches in the gaps defined by the hardmask and undercuts the hardmask at the trench opening resulting in trenches with depths that are greater than the trench opening widths;
depositing a non-conformal coating onto the dielectric substrate, wherein the non-conformal coating closes the trench openings to create vacuum gaps in the trenches; and
planarizing the dielectric substrate to form a smooth surface on the dielectric substrate.
19 . The method of claim 18 , wherein the self-assembled monolayer is removed from the dielectric substrate with hydrogen plasma treatment.
20 . The method of claim 18 , wherein the metal features are configured on the dielectric substrate to form trenches in the hardmask that have a rectangular shape.
21 . The method of claim 18 , wherein the metal features are configured on the dielectric substrate to form trenches in the hardmask that have a trapezoidal shape.
22 . A method for forming a vacuum gap in a dielectric substrate comprising:
depositing a self-assembled monolayer with reactive head groups onto a dielectric substrate with metal features, wherein the reactive head groups bind to the metal features;
forming a hardmask on the dielectric substrate by area selective deposition of a hardmask material onto the dielectric substrate, wherein (i) due to the self-assembled monolayer bound to the metal features, the hardmask material reaches, but does not touch the metal features, (ii) the metal features and the hardmask material collectively form the hardmask, and (iii) the hardmask has gaps in areas located between the metal features and the selectively deposited hardmask material;
etching the dielectric substrate, wherein the etching forms trenches in the gaps defined by the hardmask and undercuts the hardmask at the trench opening resulting in trenches with depths that are greater than the trench opening widths, and further wherein the etching removes the self-assembled monolayer from the dielectric substrate;
depositing a non-conformal coating onto the dielectric substrate, wherein the non-conformal coating closes the trench openings to create vacuum gaps in the trenches; and
planarizing the dielectric substrate to form a smooth surface on the dielectric substrate.
23 . The method of claim 22 , wherein the metal features are configured on the dielectric substrate to form trenches in the hardmask that have a rectangular shape.
24 . The method of claim 22 , wherein the metal features are configured on the dielectric substrate to form trenches in the hardmask that have a trapezoidal shape.
25 . The method of claim 22 , wherein the hardmask is etched with reactive ion etching.