Compensation method for wafer bonding
A compensation method for wafer bonding includes bonding a first wafer and a second wafer, the first wafer including a first conductive pad and a second conductive pad. A first overlay check is performed. A result of the first overlay check is determined whether the result is within a first predetermined specification. If the result of the first overlay check is determined as beyond the first predetermined specification, performing a first compensation method to form a compensated first wafer and a compensated second wafer, wherein a position of a first conductive pad of the compensated first wafer is different from a position of the first conductive pad of the first wafer, and a position of a second conductive pad of the compensated first wafer is different from a position of the second conductive pad of the first wafer.
1 . A compensation method for wafer bonding, comprising:
bonding a first wafer and a second wafer, wherein the first wafer has a first conductive pad, and the second wafer has a second conductive pad;
performing a first process to the first wafer and the second wafer, wherein prior to performing the first process, the first conductive pad has a first position, and a first shift is between the first position and an ideal position, and wherein after performing the first process, the first conductive pad has a second position, and a second shift is between the second position and the first position, wherein the ideal position is a position of the first conductive pad under a condition where the first wafer is not distorted during manufacturing process;
performing a second process to the second wafer, wherein after performing the second process, the first conductive pad has a third position, and a third shift is between the third position and the second position;
performing a first compensation method to produce a compensated first wafer and a compensated second wafer, the first compensation method comprising defining a position of a first conductive pad of the compensated first wafer, wherein the position of a first conductive pad of the compensated first wafer is determined by the first shift, the second shift, and the third shift; and
bonding the compensated first wafer and the compensated second wafer.
2 . The method of claim 1 , wherein a difference between the position of the first conductive pad of the compensated first wafer and the third position of the first conductive pad of the first wafer is equal to a sum of the first shift, the second shift, and the third shift.
3 . The method of claim 1 , further comprising, prior to performing the first process, performing a second compensation method, the second compensation method comprising:
separating the first wafer and the second wafer;
adjusting relative positions of the first wafer and the second wafer; and
re-bonding the first wafer and the second wafer;
performing an overlay check, the overlay check comprising determining whether the first conductive pad of the first wafer is in contact with the second conductive pad of the second wafer; and
determining whether a result of the overlay check is within a predetermined specification.
4 . The method of claim 3 , wherein the first compensation method is performed by a lithography tool, and the second compensation method is performed by a bonder.
5 . The method of claim 2 , wherein adjusting relative positions of the first wafer and the second wafer comprises:
linearly moving the first wafer with respect to the second wafer;
rotating the first wafer with respect to the second wafer; or
scaling up the first wafer with respect to the second wafer.
6 . The method of claim 1 , further comprising:
measuring a wafer shape of the first wafer; and
forming the first conductive pad over the first wafer based on the wafer shape.