IP Library Granted Patent US 12,590,367
Granted Patent B2
US 12,590,367 · App. 17/605,633 · Granted Mar 31, 2026

Precursor supply chamber

Inventors: Johannes Wesslin (Espoo, FI); Matti Malila (Espoo, FI); Pekka Soininen (Espoo, FI)
Assignee: BENEQ OY
C23C16/4485C23C16/45544C23C16/45561
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Quick Facts
Patent No.
US 12,590,367
App. No.
17/605,633
Granted
Mar 31, 2026
Kind
B2
Abstract

A precursor supply chamber for accommodating a precursor container in connection with an atomic layer deposition apparatus includes chamber walls defining a chamber space inside the precursor supply chamber. The precursor supply chamber also includes a chamber door assembly arranged to close the precursor supply chamber in a gas tight manner, a first heating element provided to the precursor supply chamber and arranged to heat the precursor container inside the chamber space of the precursor supply chamber and a gas tight precursor connection provided to the chamber walls for supplying precursor from the precursor container outside the precursor supply chamber.

Claims (61)

1 . A precursor supply chamber for accommodating a precursor container in connection with an atomic layer deposition apparatus, the precursor supply chamber comprises chamber walls including a top wall, a bottom wall, and at least one side wall extending between the top wall and the bottom wall, the chamber walls defining a chamber space inside the precursor supply chamber, the precursor supply chamber comprising:

a chamber door assembly arranged to close the precursor supply chamber in gas tight manner;

a first heating element provided to the precursor supply chamber and arranged to heat the precursor container inside the chamber space of the precursor supply chamber;

a gas tight precursor connection provided to the chamber walls for supplying precursor from the precursor container outside the precursor supply chamber;

a precursor container holder for holding the precursor container, the precursor container holder is arranged at a bottom of the chamber space of the precursor supply chamber, the first heating element is provided to the precursor container holder for heating the precursor container held by the precursor container holder;

a precursor supply element arranged to control precursor supply from the precursor container to outside the precursor supply chamber via the gas tight precursor connection, the precursor supply element is arranged at a top of the chamber space of the precursor supply chamber above the precursor container holder inside the precursor supply chamber, the precursor supply element includes one or more gas valves arranged to control precursor supply from the precursor container outside the precursor supply chamber via the gas tight precursor connection;

a second heating element provided above the precursor container holder in the precursor supply chamber, wherein the second heating element is positioned in contact with the precursor supply element in the precursor supply chamber, the second heating element arranged to heat the precursor supply element and the one or more gas valves; and

a third heating element provided to the gas tight precursor connection,

wherein the precursor supply chamber further comprises:

a first temperature sensor arranged in connection with the first heating element;

a second temperature sensor arranged in connection with the second heating element; and

a third temperature sensor arranged in connection with the precursor connection for measuring the temperature of the precursor connection, a precursor supply conduit in the precursor connection and the temperature of the precursor, and

wherein the temperatures of the first, second and third heating elements are controlled with a control unit by utilizing the temperature sensors.

2 . The precursor supply chamber according to claim 1 , wherein the first heating element is provided to lower part (B) of the chamber space of the precursor supply chamber.

3 . The precursor supply chamber according to claim 1 , wherein:

the second heating element is provided above the first heating element in the precursor supply chamber.

4 . The precursor supply chamber according to claim 1 , wherein the third heating element is in contact with the gas tight precursor connection.

5 . The precursor supply chamber according to claim 1 , wherein:

the chamber walls are made of metal such that the metal chamber walls define the chamber space of the precursor supply chamber; or

the chamber walls comprise a metal inner wall layer defining the chamber space of the precursor supply chamber; or

the chamber walls comprise a metal inner wall layer and a metal outer wall layer, the metal inner wall layer defining the chamber space of the precursor supply chamber.

6 . The precursor supply chamber according to claim 5 , wherein:

the chamber walls are provided with thermal insulation; or

the chamber walls are provided with thermal insulation layer arranged between the metal inner wall layer and the metal outer wall layer; or

the chamber walls comprise metal surface layers and a thermal insulation encapsulated inside the chamber walls between the metal surface layers.

7 . The precursor supply chamber according to claim 1 , wherein the chamber door assembly comprises a chamber door and a sealing member arranged to seal the precursor supply chamber when the chamber door is in closed position.

8 . The precursor supply chamber according to claim 1 , wherein the chamber door assembly comprises the chamber door and a closing mechanism arranged to pre-stress the chamber door to the closed position.

9 . A precursor supply cabinet in connection with an atomic layer deposition apparatus, wherein the precursor supply cabinet comprises:

one or more ventilation openings arranged to provide ventilation gas into the precursor supply cabinet;

a ventilation discharge connection arranged to discharge ventilation gas from the precursor supply cabinet; and

one or more gas tight precursor supply chambers inside the precursor supply cabinet, the one or more gas tight precursor supply chambers are arranged to accommodate a precursor container in connection with an atomic layer deposition apparatus, wherein the precursor supply chamber comprises chamber walls defining a chamber space inside precursor supply chamber, the precursor supply chamber comprising:

a chamber door assembly arranged to close the precursor supply chamber in gas tight manner;

a first heating element provided to the precursor supply chamber and arranged to heat the precursor container inside the chamber space of the precursor supply chamber; and

a gas tight precursor connection provided to the chamber walls for supplying precursor from the precursor container outside the precursor supply chamber, wherein the one or more gas tight precursor supply chambers are precursor supply chambers according to claim 1 .

10 . The precursor supply chamber according to claim 1 , wherein the second heating element is spaced from the one or more gas valves.

11 . The precursor supply chamber according to claim 1 , wherein the precursor container holder is in contact with the bottom wall of the precursor supply chamber.

12 . The precursor supply chamber according to claim 11 , wherein the precursor supply element is in contact with top wall of the chamber space of the precursor supply chamber.

13 . The precursor supply chamber according to claim 1 , wherein the precursor supply element is in contact with top wall of the chamber space of the precursor supply chamber.

14 . The precursor supply chamber according to claim 1 , wherein the third heating element is positioned outside of the precursor supply chamber.

15 . A precursor supply cabinet in connection with an atomic layer deposition apparatus, wherein the precursor supply cabinet comprises:

one or more ventilation openings arranged to provide ventilation gas into the precursor supply cabinet;

a ventilation discharge connection arranged to discharge ventilation gas from the precursor supply cabinet; and

one or more gas tight precursor supply chambers inside the precursor supply cabinet, the one or more gas tight precursor supply chambers are arranged to accommodate a precursor container in connection with an atomic layer deposition apparatus, wherein the precursor supply chamber comprises chamber walls including a top wall, a bottom wall, and at least one side wall extending between the top wall and the bottom wall, the chamber walls defining a chamber space inside precursor supply chamber, the precursor supply chamber comprising:

a chamber door assembly arranged to close the precursor supply chamber in gas tight manner;

a first heating element provided to the precursor supply chamber and arranged to heat the precursor container inside the chamber space of the precursor supply chamber;

a precursor container holder for holding the precursor container and arranged at a bottom of the chamber space of the precursor supply chamber;

a precursor supply element arranged to control precursor supply from the precursor container to outside the precursor supply chamber, the precursor supply element is spaced from and above the first heating element inside the precursor supply chamber, the precursor supply element is arranged at a top of the chamber space of the precursor supply chamber;

a second heating element provided above the first heating element in the precursor supply chamber, wherein the second heating element is positioned in contact with the precursor supply element in the precursor supply chamber;

a gas tight precursor connection provided to the chamber walls for supplying precursor from the precursor container outside the precursor supply chamber; and

a third heating element provided to the gas tight precursor connection,

wherein the precursor supply chamber further comprises:

a first temperature sensor arranged in connection with the first heating element;

a second temperature sensor arranged in connection with the second heating element; and

a third temperature sensor arranged in connection with the precursor connection for measuring the temperature of the precursor connection, a precursor supply conduit in the precursor connection and the temperature of the precursor,

and

wherein the temperatures of the first, second and third heating elements are controlled with a control unit by utilizing the temperature sensors.

16 . The precursor supply cabinet according to claim 15 , wherein the precursor supply element includes one or more gas valves arranged to control precursor supply from the precursor container outside the precursor supply chamber via the gas tight precursor connection, wherein the second heating element is spaced from the one or more gas valves.

17 . The precursor supply cabinet according to claim 15 , wherein the precursor container holder is in contact with the bottom wall of the precursor supply chamber.

18 . The precursor supply chamber according to claim 17 , wherein the precursor supply element is in contact with top wall of the chamber space of the precursor supply chamber.

19 . The precursor supply chamber according to claim 15 , wherein the precursor supply element is in contact with top wall of the chamber space of the precursor supply chamber.

20 . The precursor supply chamber according to claim 15 , wherein the third heating element is positioned outside of the precursor supply chamber.

Assignments (4)
CHANGE OF NAME Recorded Jul 28, 2022
From: HERVANNAN SAUNA OY
To: BENEQ OY
Reel/Frame 060649/0613 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 26, 2022
From: BENEQ GROUP OY
To: HERVANNAN SAUNA OY
Reel/Frame 060617/0577 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 21, 2022
From: BENEQ OY
To: BENEQ GROUP OY
Reel/Frame 060575/0505 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 8, 2022
From: WESSLIN, JOHANNES; MALILA, MATTI; SOININEN, PEKKA
To: BENEQ OY
Reel/Frame 059192/0207 →
Priority Claims (1)
FI 20195336 · Apr 25, 2019 · national
Continuity (1)
Related Publication 20220220614A1 · Jul 14, 2022
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