Gate line driving circuit with top gate and bottom gate
A circuit includes a first switching element, a second switching element, a third switching element and a fourth switching element. The first switching element has a first end and a second end. The second switching element has a first end and a second end, wherein the first end of the second switching element is coupled to the first end of the first switching element. The third switching element has a first end and a second end, wherein the second end of the third switching element is coupled to the second end of the second switching element. The fourth switching element has a first end coupled to the second end of the first switching element. The fourth switching element has a bottom gate and the second switching element has a top gate.
1 . A circuit, comprising:
a first switching element having a first end and a second end;
a second switching element having a first end and a second end, wherein the first end of the second switching element is coupled to the first end of the first switching element, and the second end of the second switching element is a gate;
a third switching element having a first end and a second end, wherein the second end of the third switching element is coupled to the second end of the second switching element, and the second end of the third switching element is a gate configured to receive a pulse signal; and
a fourth switching element having a first end coupled to the second end of the first switching element and an end of a first capacitor,
wherein the fourth switching element has a bottom gate and an oxide semiconductor layer;
and the second switching element has a top gate and a silicon semiconductor layer.
2 . The circuit as claimed in claim 1 , wherein the second end of the first switching element is a gate.
3 . The circuit as claimed in claim 1 , further comprising a fifth switching element having a first end coupled to the other end of the first capacitor, and the first end of the fifth switching element is a gate.
4 . The circuit as claimed in claim 3 , wherein the second end of the first switching element is a gate.
5 . The circuit as claimed in claim 1 , further comprising a fifth switching element having a first end coupled to the first end of the third switching element.
6 . The circuit as claimed in claim 5 , wherein the fifth switching element has a silicon semiconductor layer.
7 . The circuit as claimed in claim 1 , wherein the first switching element has a silicon semiconductor layer.
8 . The circuit as claimed in claim 1 , wherein the third switching element has a silicon semiconductor layer.
9 . The circuit as claimed in claim 1 , wherein the second switching element has a third end coupled to a first voltage source.
10 . The circuit as claimed in claim 9 , wherein the first voltage source provides a low voltage value.