Electronic devices comprising an oxide fill region, and related electronic systems and methods
An electronic device comprising a source stack comprising one or more conductive materials, and an oxide fill region within an upper portion of the source stack. A source contact is adjacent to the source stack and the oxide fill region, and a doped semiconductive material is adjacent to the source contact. Tiers of alternating conductive materials and dielectric materials are adjacent to the doped semiconductive material, and pillars extend through the tiers, the doped semiconductive material, and the source contact and into the source stack. Additional electronic devices are also disclosed, as are related methods and electronic systems.
1 . An electronic device, comprising:
a source stack comprising one or more conductive materials;
an oxide fill region within an upper portion of the source stack;
a source contact adjacent to the source stack and the oxide fill region;
a doped semiconductive material adjacent to the source contact;
a fill material vertically adjacent to the oxide fill region and the source contact;
tiers of alternating conductive materials and dielectric materials adjacent to the doped semiconductive material; and
pillars extending through the tiers of alternating conductive materials and dielectric materials, the doped semiconductive material, and the source contact and into the source stack.
2 . The electronic device of claim 1 , further comprising a source contact liner between the fill material and the source contact.
3 . The electronic device of claim 2 , wherein the source contact liner is between the doped semiconductive material and the fill material.
4 . The electronic device of claim 3 , wherein the source contact liner is laterally interposed between the fill material and the doped semiconductive material, and the source contact liner is vertically interposed between the fill material and the source contact.
5 . The electronic device of claim 1 , wherein a width of the oxide fill region is wider in a lateral direction than a width of the fill material laterally adjacent to the doped semiconductive material.
6 . The electronic device of claim 1 , wherein a width of a portion of the fill material laterally adjacent to the doped semiconductive material is substantially the same as a width of a portion of the fill material laterally adjacent to a bottom of the tiers of alternating conductive materials and dielectric materials.
7 . The electronic device of claim 1 , wherein a top surface of the oxide fill region is substantially coplanar with an upper portion of the source stack.
8 . The electronic device of claim 1 , wherein the source contact is below the doped semiconductive material and extends laterally to a channel of the pillars.
9 . The electronic device of claim 1 , wherein the oxide fill region comprises a silicon oxide material.
10 . An electronic device, comprising:
an oxide fill region in a source stack comprising one or more conductive materials;
a source contact adjacent to the source stack;
a doped semiconductive material adjacent to the source contact;
tiers of alternating conductive materials and dielectric materials adjacent to the doped semiconductive material;
pillars extending through the tiers of alternating conductive materials and dielectric materials and into the source stack; and
a fill material laterally adjacent to the pillars and extending through the tiers of alternating conductive materials and dielectric materials and the doped semiconductive material, the fill material vertically adjacent to the source contact and exhibiting a smaller width in a lateral direction than a width in the lateral direction of the oxide fill region.
11 . An electronic system, comprising:
an input device;
an output device;
a processor device operably coupled to the input device and to the output device; and
one or more memory devices operably coupled to the processor device, the one or more memory devices comprising:
a source contact adjacent to a source stack;
an oxide fill region within an upper portion of the source stack;
a semiconductive material adjacent to the source contact;
tiers of alternating conductive materials and dielectric materials adjacent to the semiconductive material;
memory pillars extending through the tiers of alternating conductive materials and dielectric materials, the semiconductive material, the source contact, and partially into the source stack; and
a fill material extending through the tiers of alternating conductive materials and dielectric materials and overlying the oxide fill region and a portion of the source contact.
12 . The electronic system of claim 11 , further comprising a liner interposed between the fill material and the dielectric materials, and between the fill material and the source contact.
13 . The electronic system of claim 11 , wherein portions of the oxide fill region are laterally adjacent to the dielectric materials and the fill material.
14 . A method of forming an electronic device, the method comprising:
forming a source contact sacrificial structure adjacent to a source stack;
forming an oxide fill region adjacent to the source contact sacrificial structure;
forming a slit sacrificial structure vertically neighboring the oxide fill region;
forming a doped semiconductive material adjacent to the source contact sacrificial structure;
forming tiers adjacent to the doped semiconductive material, the tiers comprising alternating dielectric materials and nitride materials;
forming pillars through the tiers, the doped semiconductive material, the source contact sacrificial structure, and the source stack, the pillars including a channel, a charge blocking material, and a charge trap material;
forming a slit vertically adjacent to the slit sacrificial structure through the tiers to expose the source contact sacrificial structure;
removing at least a portion of the slit sacrificial structure and the source contact sacrificial structure to form a source contact opening;
forming a source contact in the source contact opening and in a portion of the slit;
removing at least a portion of the source contact in the slit;
forming a liner on an upper surface of the source contact;
replacing the nitride materials in the tiers with conductive materials; and
forming a fill material in the slit, a portion of the fill material neighboring the oxide fill region.
15 . The method of claim 14 , wherein forming an oxide fill region adjacent to the source contact sacrificial structure comprises forming the oxide fill region within the source stack.
16 . The method of claim 14 , wherein forming an oxide fill region adjacent to the source contact sacrificial structure comprises forming the oxide fill region over the source contact sacrificial structure.
17 . The method of claim 16 , wherein forming the oxide fill region over the source contact sacrificial structure comprises forming the oxide fill region within the doped semiconductive material.
18 . The method of claim 14 , wherein forming a slit sacrificial structure vertically neighboring the oxide fill region comprises forming the slit sacrificial structure above the oxide fill region.
19 . The method of claim 14 , wherein removing at least a portion of the slit sacrificial structure and the source contact sacrificial structure to form a source contact opening comprises substantially completely removing the slit sacrificial structure and the source contact sacrificial structure to form the source contact opening.
20 . The method of claim 14 , wherein forming a slit sacrificial structure vertically neighboring the oxide fill region comprises forming the slit sacrificial structure below the oxide fill region.
21 . The method of claim 14 , wherein removing at least a portion of the slit sacrificial structure and the source contact sacrificial structure to form a source contact opening comprises partially removing the oxide fill region, substantially completely removing the slit sacrificial structure, and substantially completely removing the source contact sacrificial structure to form the source contact opening.
22 . The method of claim 14 , wherein forming a fill material in the slit comprises filling the slit with the fill material, the fill material proximal to the source contact exhibiting a narrower width than a width of the oxide fill region.