Through silicon via interconnection structure and method of forming same, and quantum computing device
View Patent ↗A through silicon via interconnection structure and a method of forming same, and a quantum computing device are provided. The method includes: providing a silicon wafer, having a first surface and a second surface opposite to each other; forming, in the silicon wafer, a through silicon via penetrating through the silicon wafer in a direction from the first surface to the second surface of the silicon wafer; forming a groove communicating with the through silicon via in a target surface of the first surface and the second surface of the silicon wafer using a photolithography process; and forming a superconducting thin film in the groove and the through silicon via to obtain the through silicon via interconnection structure.
1 . A method of forming a through silicon via interconnection structure, the method comprising:
providing a silicon wafer, having a first surface and a second surface opposite to each other;
forming, in the silicon wafer, a through silicon via penetrating through the silicon wafer in a direction from the first surface to the second surface of the silicon wafer;
forming a groove communicating with the through silicon via in a target surface of the first surface and the second surface of the silicon wafer using a photolithography process; and
forming a superconducting thin film in the groove and the through silicon via to obtain the through silicon via interconnection structure, wherein the forming the superconducting thin film comprises depositing a same superconducting material in the groove and the through silicon via to form the superconducting thin film.
2 . The method according to claim 1 , wherein the depositing the same superconducting material in the groove and the through silicon via comprises:
depositing the same superconducting material in the groove and the through silicon via using an atomic layer deposition process or a chemical vapor deposition process, to form the superconducting thin film.
3 . The method according to claim 2 , wherein the superconducting material is a titanium nitride material.
4 . The method according to claim 1 , wherein the forming the groove communicating with the through silicon comprises:
forming a photoresist on the target surface of the first surface and the second surface of the silicon wafer;
exposing and developing the photoresist in sequence to obtain a photoresist pattern, an orthographic projection of the photoresist pattern on the silicon wafer not overlapping with the through silicon via; and
etching a region, not covered by the photoresist pattern, on the target surface to form the groove communicating with the through silicon via.
5 . The method according to claim 4 , wherein the etching the region on the target surface comprises:
etching the region, not covered by the photoresist pattern, on the target surface using dry etching.
6 . The method according to claim 4 , wherein the photoresist is a positive photoresist, and the method further comprises:
forming a circuit structure using the superconducting thin film located in the groove, and an exposed region of the positive photoresist during exposure being identical with the circuit structure in shape and size.
7 . The method according to claim 4 , wherein the photoresist is a negative photoresist, and the method further comprises:
forming a circuit structure using the superconducting thin film located in the groove, and an unexposed region of the negative photoresist during exposure of the negative photoresist being identical with the circuit structure in shape and size.
8 . The method according to claim 4 , wherein the method further comprises:
removing the photoresist pattern using acetone and a glue remover.
9 . The method according to claim 1 , wherein the forming the superconducting thin film in the groove and the through silicon via to obtain the through silicon via interconnection structure comprises:
forming, on the target surface, a superconducting thin film covering the target surface;
forming, in the through silicon via, a superconducting thin film covering a side wall of the through silicon via; and
removing a remainder of the superconducting thin film on the target surface, except for the superconducting thin film at a bottom of the groove, to obtain the through silicon via interconnection structure.
10 . The method according to claim 9 , wherein the removing the remainder of the superconducting thin film on the target surface comprises:
polishing the target surface covered with the superconducting thin film to remove the remainder of the superconducting thin film on the target surface, except for the superconducting thin film at a bottom of the groove.
11 . The method according to claim 1 , wherein the method further comprises:
forming insulation layers in the groove and the through silicon via; and
the forming the superconducting thin film in the groove and the through silicon via comprises:
forming the superconducting thin film on a side, far away from the silicon wafer, of the insulation layer in the groove and on a side, far away from the silicon wafer, of the insulation layer in the through silicon via.
12 . The method according to claim 11 , wherein the forming the insulation layers in the groove and the through silicon via comprises:
depositing an insulation material in the groove and the through silicon via using an atomic layer deposition process or a chemical vapor deposition process, to form the insulation layers.
13 . The method according to claim 11 , wherein the forming the insulation layers in the groove and the through silicon via comprises:
performing thermal oxidation treatment on the groove and the through silicon via to form the insulation layers in the groove and the through silicon via.
14 . The method according to claim 11 , wherein a material of the insulation layer is silicon dioxide.
15 . A through silicon via interconnection structure, comprising:
a silicon wafer, having a first surface and a second surface opposite to each other;
a through silicon via, penetrating through the silicon wafer in a direction from the first surface to the second surface of the silicon wafer;
a superconducting thin film located in a groove in a target surface of the first surface and the second surface of the silicon wafer, and located in the through silicon via; and
an insulation layer, located in the groove and the through silicon via, and on a side of the superconducting thin film close to the silicon wafer.
16 . The through silicon via interconnection structure according to claim 15 , wherein a material of the superconducting thin film is a titanium nitride material.
17 . The through silicon via interconnection structure according to claim 15 , wherein a material of the insulation layer is silicon dioxide.
18 . A quantum computing device, comprising:
a first chip;
a second chip; and
a through silicon via interconnection structure, comprising:
a silicon wafer, having a first surface and a second surface opposite to each other;
a through silicon via, penetrating through the silicon wafer in a direction from the first surface to the second surface of the silicon wafer; and
a superconducting thin film located in a groove in a target surface of the first surface and the second surface of the silicon wafer, and located in the through silicon via; and
the first chip, the through silicon via interconnection structure, and the second chip being stacked in sequence, and the first chip and the second chip being interconnected through the through silicon via interconnection structure.
19 . The quantum computing device according to claim 18 , wherein the through silicon via interconnection structure further comprises:
insulation layers, located in the groove and the through silicon via, and on a side of the superconducting thin film close to the silicon wafer.