Microelectronic structure including active base substrate with through vias between a top die and a bottom die supported on an interposer
A microelectronic component and a method of forming same. The microelectronic component includes: a first substrate having first through vias therein, the first substrate including silicon or glass; a first layer on a front surface of the first substrate and including one or more first dies coupled to the first through vias; a second substrate on a front surface of first layer and having second through vias therein and including silicon or glass; a second layer on a front surface of the second substrate, the first layer between the first substrate and the second substrate, the second layer including one or more second dies coupled to the second through vias; and electrically conductive structures on a back surface of the first substrate coupled to the first through vias.
1 . A microelectronic component including:
a first substrate having first through vias therein, the first substrate including silicon or glass;
a first layer on a front surface of the first substrate, the first layer including one or more first dies coupled to the first through vias;
a second substrate on a front surface of first layer, the second substrate having second through vias therein and including silicon or glass;
a second layer on a front surface of the second substrate such that the first layer is between the first substrate and the second substrate, the second layer including one or more second dies coupled to the second through vias; and
electrically conductive structures on a back surface of the first substrate, the electrically conductive structures coupled to the first through vias, wherein at least one of:
the second through vias have a pitch less than or equal to 2 μm and a diameter that is about ½ of the pitch; or
the pitch is above 2 μm, the diameter is between about 5 μm and 10 μm.
2 . The microelectronic component of claim 1 , wherein at least one of the one or more first dies, and at least one of the one or more second dies includes a chiplet.
3 . The microelectronic component of claim 1 , wherein the first layer is a passive layer, and the second layer is an active layer.
4 . The microelectronic component of claim 1 , wherein a number of the one or more dies of the first layer is a same as a number of the one or more dies of the second layer.
5 . The microelectronic component of claim 1 , wherein the second substrate has a thickness from about 5 μm to about 50 um, wherein the second through vias have diameters of about 2 μm to about 10 μm and lengths from about 5 μm to about 50 μm, wherein the second through vias have pitches from a submicron range to about 20 μm.
6 . The microelectronic component of claim 1 , further including:
a first interconnect layer including a first dielectric material and first interconnects embedded in the first dielectric material, the first interconnect layer between the first substrate and the first layer, wherein the first interconnects are coupled to the first through vias on a back surface of the first interconnect layer, and to the one or more first dies at a front surface of the first interconnect layer; and
a second interconnect layer including a second dielectric material and second interconnects embedded in the second dielectric material, the second interconnect layer between the second substrate and the second layer, wherein the second interconnects are coupled to the second through vias on a back surface of the second interconnect layer, and to the one or more second dies at a front surface of the second interconnect layer.
7 . The microelectronic component of claim 6 , further including a redistribution layer between the first substrate and the first interconnect layer, the redistribution layer including a third dielectric material and electrically conductive traces therein to reroute electrical pathways between a front surface and a back surface of the redistribution layer, the electrically conductive traces coupled to the first through vias the front surface of the redistribution layer, and to the first interconnects at the back surface of the redistribution layer.
8 . The microelectronic component of claim 6 , wherein at least one of the one or more first dies is coupled to the first interconnect layer by way of hybrid bonded connections.
9 . The microelectronic component of claim 6 , wherein the second interconnect layer has a front surface that defines a shelf structure at areas thereof not covered by the second layer.
10 . The microelectronic component of claim 1 , further including a mold compound on the second substrate such that it encapsulates the second layer, the mold compound extending along side walls of the second layer, and extending between the one or more dies of the second layer.
11 . The microelectronic component of claim 10 , wherein the mold compound further extends along side walls of the second substrate, along side walls of the first layer.
12 . A semiconductor package, including:
a package substrate; and
a microelectronic component coupled to the package substrate, the microelectronic component including:
a first substrate having first through vias therein, the first substrate including silicon or glass;
a first layer on a front surface of the first substrate, the first layer including one or more first dies coupled to the first through vias;
a second substrate on a front surface of first layer, the second substrate having second through vias therein and including silicon or glass;
a second layer on a front surface of the second substrate such that the first layer is between the first substrate and the second substrate, the second layer including one or more second dies coupled to the second through vias; and
electrically conductive structures on a back surface of the first substrate, the electrically conductive structures coupled to the first through vias at one side thereof, and to the package substrate at another side thereof, wherein at least one of:
the second through vias have a pitch less than or equal to 2 μm and a diameter that is about ½ of the pitch; or
the pitch is above 2 μm, the diameter is between about 5 μm and 10 μm.
13 . The semiconductor package of claim 12 , further including an underfill material encapsulating the electrically conductive structures.
14 . The semiconductor package of claim 12 , wherein at least one of the one or more first dies, and at least one of the one or more second dies includes a chiplet.
15 . The semiconductor package of claim 12 , wherein the first layer is a passive layer, and the second layer is an active layer.
16 . The semiconductor package of claim 12 further including:
a first interconnect layer including a first dielectric material and first interconnects embedded in the first dielectric material, the first interconnect layer between the first substrate and the first layer, wherein the first interconnects are coupled to the first through vias on a back surface of the first interconnect layer, and to the one or more first dies at a front surface of the first interconnect layer; and
a second interconnect layer including a second dielectric material and second interconnects embedded in the second dielectric material, the second interconnect layer between the second substrate and the second layer, wherein the second interconnects are coupled to the second through vias on a back surface of the second interconnect layer, and to the one or more second dies at a front surface of the second interconnect layer.
17 . The semiconductor package of claim 16 , further including a redistribution layer between the first substrate and the first interconnect layer, the redistribution layer including a third dielectric material and electrically conductive traces therein to reroute electrical pathways between a front surface and a back surface of the redistribution layer, the electrically conductive traces coupled to the first through vias the front surface of the redistribution layer, and to the first interconnects at the back surface of the redistribution layer.
18 . The semiconductor package of claim 16 , wherein at least one of the one or more first dies is coupled to the first interconnect layer by way of hybrid bonded connections.
19 . The semiconductor package of claim 12 further including a mold compound on the second substrate such that it encapsulates the second layer, the mold compound extending along side walls of the second layer, and extending between the one or more dies of the second layer.
20 . An integrated circuit (IC) device assembly, including:
a printed circuit board; and
a plurality of integrated circuit components coupled to the printed circuit board, individual ones of the integrated circuit components including one or more semiconductor packages, individual ones of the semiconductor packages including:
a package substrate; and
a microelectronic component coupled to the package substrate, the microelectronic component including:
a first substrate having first through vias therein, the first substrate including silicon or glass;
a first layer on a front surface of the first substrate, the first layer including one or more first dies coupled to the first through vias;
a second substrate on a front surface of first layer, the second substrate having second through vias therein and including silicon or glass;
a second layer on a front surface of the second substrate such that the first layer is between the first substrate and the second substrate, the second layer including one or more second dies coupled to the second through vias; and
electrically conductive structures on a back surface of the first substrate, the electrically conductive structures coupled to the first through vias at one side thereof, and to the package substrate at another side thereof wherein at least one of: the second through vias have a pitch less than or equal to 2 um and a diameter that is about of the pitch; or the pitch is above 2 pm, the diameter is between about 5 um and 10 um .
21 . The IC device assembly of claim 20 , wherein the second substrate has a thickness from about 5 μm to about 50 um, wherein the second through vias have diameters of about 2 μm to about 10 μm and lengths from about 5 μm to about 50 μm, and wherein the second through vias have pitches from a submicron range to about 20 μm.
22 . The IC device assembly of claim 20 , further including:
a first interconnect layer including a first dielectric material and first interconnects embedded in the first dielectric material, the first interconnect layer between the first substrate and the first layer, wherein the first interconnects are coupled to the first through vias on a back surface of the first interconnect layer, and to the one or more first dies at a front surface of the first interconnect layer; and
a second interconnect layer including a second dielectric material and second interconnects embedded in the second dielectric material, the second interconnect layer between the second substrate and the second layer, wherein the second interconnects are coupled to the second through vias on a back surface of the second interconnect layer, and to the one or more second dies at a front surface of the second interconnect layer.
23 . The IC device assembly of claim 22 , wherein at least one of the one or more first dies is coupled to the first interconnect layer by way of hybrid bonded connections.
24 . A method to form a microelectronic structure of a semiconductor package, the method including:
providing a first microelectronic subassembly including a structure for a first wafer (first wafer structure) having first through vias therein, the first wafer structure including silicon or glass;
providing a second microelectronic subassembly including:
a structure for a second wafer (second wafer structure) including silicon or glass, the second wafer structure having second through vias therein; and
a first layer on a back surface of the second wafer structure, the first layer including one or more first dies coupled to the second through vias;
bonding the first microelectronic subassembly to the second microelectronic subassembly such that the one or more first dies are electrically coupled to the first wafer structure;
removing a portion of the second wafer structure to yield a second wafer therefrom and to reveal the second through vias at a front surface of the second wafer;
bonding a plurality of die assemblies to the second wafer such that dies of the die subassemblies are coupled to corresponding ones of the second through vias, the die subassemblies together defining a second layer;
removing a portion of the first wafer structure to yield a first wafer therefrom and to reveal the first through vias at a back surface of the first wafer;
providing electrically conductive structures coupled to the first through vias at the back surface of the first wafer to result in a microelectronic assembly including the first wafer the first layer, the second wafer and the die assemblies; and
singulating through the microelectronic assembly in a direction from the die assemblies through the first wafer to yield a plurality microelectronic components, wherein individual ones of the first wafer and the second wafer yield, respectively, a plurality of first wafer and second wafers from singulation.
25 . The method of claim 24 , wherein the second wafer has a thickness from about 5 μm to about 50 um, wherein the second through vias have diameters of about 2 μm to about 10 μm and lengths from about 5 μm to about 50 μm, and wherein the second through vias have pitches from a submicron range to about 20 μm.
26 . The method of claim 24 , further including:
providing, on the first wafer structure, and prior to bonding the first microelectronic subassembly to the second microelectronic subassembly, a first interconnect layer including a first dielectric material and first interconnects embedded in the first dielectric material, wherein bonding the first microelectronic subassembly to the second microelectronic subassembly includes bonding such that the first interconnects are coupled to the first through vias on a back surface of the first interconnect layer, and to the one or more first dies of the first layer at a front surface of the first interconnect layer; and
providing, on the second wafer, and prior to bonding the die assemblies to the second wafer, a second interconnect layer including a second dielectric material and second interconnects embedded in the second dielectric material, wherein bonding the die assemblies to the second wafer includes bonding such that the second interconnects are coupled to dies of the die assemblies at a front surface of the second interconnect layer.
27 . The method of claim 26 , the first microelectronic subassembly further includes a redistribution layer between the first wafer structure and the first interconnect layer, the redistribution layer including a third dielectric material and electrically conductive traces therein to reroute electrical pathways between a front surface and a back surface of the redistribution layer, the electrically conductive traces coupled to the first through vias the front surface of the redistribution layer, and to the first interconnects at the back surface of the redistribution layer.
28 . The method of claim 26 , wherein bonding the first microelectronic subassembly to the second microelectronic subassembly includes bonding such that the first interconnects are coupled to the one or more dies of the first layer at a front surface of the first interconnect layer by way of hybrid bonded connections.
29 . The method of claim 26 , further including providing a mold compound on the second wafer such that it encapsulates the second layer, the mold compound extending along side walls of the second layer, and extending between the one or more dies of the second layer, wherein:
the mold compound further extends along side walls of the second wafer, along side walls of the first layer, and does not extend between the one or more dies of the first layer; and
wherein the mold compound includes one of an epoxy material or silicon dioxide.
30 . The microelectronic component of claim 1 , wherein the second substrate has a thickness from about 5 μm to about 50 um, wherein the second through vias have diameters of about 2 μm to about 10 μm and lengths from about 5 μm to about 50 μm, wherein the second through vias have pitches from a submicron range to about 20 μm.