Device with airgap structure
The present disclosure relates to semiconductor structures and, more particularly, to devices with airgap structures and methods of manufacture. The structure includes: a semiconductor substrate with a trap-rich region; one or more airgap structures within the semiconductor substrate; at least one deep trench isolation structure laterally surrounding the one or more airgap structures and extending into the semiconductor substrate; and a device over the one or more airgap structures.
1. A structure comprising:
a semiconductor substrate comprising a trap-rich region;
plural airgap structures within the semiconductor substrate, wherein the plural airgap structures are within the trap-rich region;
at least one deep trench isolation structure laterally surrounding the plural airgap structures and extending into the semiconductor substrate, wherein the plural airgap structures are bounded by the at least one deep trench structure and isolated from one another by pillars comprising the trap-rich region; and
a device over the plural airgap structures.
2. The structure of claim 1 , wherein the at least one airgap structure is within the trap-rich region below the device.
3. The structure of claim 1 , wherein the device is a heterojunction bipolar transistor comprising a collector, a base and an emitter.
4. The structure of claim 1 , wherein the trap-rich region comprises amorphous semiconductor material below the device.
5. The structure of claim 4 , wherein the trap-rich region extends at least partially below the at least one deep trench isolation structure within the semiconductor substrate.
6. The structure of claim 1 , further comprising epitaxial semiconductor material that seals the plural airgap structures.
7. The structure of claim 1 , further comprising shallow trench isolation structures above the trap-rich region.
8. A structure comprising:
a semiconductor substrate comprising a trap-rich region of amorphous semiconductor material;
shallow trench isolation structures above the trap-rich region;
deep trench isolation structures extending into the semiconductor substrate to a depth below the shallow trench isolation structures;
plural airgap structures bounded by the deep trench isolation structures and isolated from one another by pillars comprising the trap-rich region, wherein the plural airgap structures are within the trap-rich region; and
a device above the plural airgap structures and the trap rich region.
9. The structure of claim 8 , wherein the at least one airgap structure is within the trap-rich region below the device.
10. The structure of claim 8 , wherein the device is a heterojunction bipolar transistor comprising a collector, a base and an emitter.
11. The structure of claim 8 , wherein the trap-rich region is also bounded by the deep trench isolation structures.
12. The structure of claim 8 , wherein the trap-rich region extends at least partially below the deep trench isolation structures.
13. The structure of claim 8 , further comprising epitaxial semiconductor material that seals the plural airgap structures.
14. A method comprising:
forming a semiconductor substrate comprising a trap-rich region;
forming plural airgap structures within the semiconductor substrate, wherein the plural airgap structures are within the trap-rich region;
forming at least one deep trench isolation structure laterally surrounding the plural airgap structures and extending into the semiconductor substrate, wherein the plural airgap structures are bounded by the at least one deep trench structure and isolated from one another by pillars comprising the trap-rich region; and
forming a device over the plural airgap structures.