Image sensor
An image sensor includes: a substrate having a first surface on which light is incident and a second surface opposite to the first surface; a pixel isolation structure enclosing a pixel region in the substrate; a photoelectric conversion region in the pixel region; and a device isolation layer defining a pattern in the pixel region, wherein the device isolation layer includes a first portion contacting the pixel isolation structure and a second portion spaced apart from the pixel isolation structure, the device isolation layer extends from a second surface of the substrate into the substrate, and a length of the second portion of the device isolation layer in a vertical direction perpendicular to the first surface of the substrate is less than a length of the first portion of the device isolation layer in the vertical direction.
1 . An image sensor comprising:
a substrate having a first surface on which light is incident and a second surface opposite to the first surface;
a pixel isolation structure enclosing a pixel region in the substrate;
a photoelectric conversion region in the pixel region;
a first doped region contacting the pixel isolation structure in the pixel region; and
a device isolation layer defining a pattern in the pixel region,
wherein the device isolation layer includes a first portion contacting a side surface of the pixel isolation structure and a second portion spaced apart from the pixel isolation structure,
wherein the first portion has a first surface which is coplanar with the first surface of the substrate and a second surface opposite to the first surface,
wherein the first portion and the second portion are in material continuity with each other,
wherein the first portion of the device isolation layer is between the side surface of the pixel isolation structure and the second portion of the device isolation layer,
wherein the device isolation layer extends from the second surface of the substrate into the substrate,
wherein a length of the second portion of the device isolation layer in a vertical direction perpendicular to the first surface of the substrate is less than a length of the first portion of the device isolation layer in the vertical direction, and
wherein the first doped region contacts the second surface of the first portion.
2 . The image sensor of claim 1 , wherein the first portion of the device isolation layer contacts the pixel isolation structure along a perimeter of the pixel region.
3 . The image sensor of claim 1 , further comprising:
a second doped region in the pattern,
wherein impurities in the first doped region have a different conductivity type from that of impurities in the second doped region, and
wherein the first portion of the device isolation layer is above the first doped region.
4 . The image sensor of claim 3 , wherein the second doped region comprises a floating diffusion region.
5 . The image sensor of claim 1 , wherein the pixel isolation structure penetrates the substrate from the first surface to the second surface of the substrate.
6 . The image sensor of claim 1 , wherein a width of the pixel isolation structure on the first surface of the substrate is less than a width of the pixel isolation structure on the second surface of the substrate.
7 . The image sensor of claim 1 , further comprising a transfer gate extending from the second surface of the substrate into the substrate.
8 . The image sensor of claim 1 , further comprising:
a second doped region in the pattern,
wherein the pattern includes first and second patterns spaced apart from each other,
wherein the second doped region is located in the first pattern,
wherein the image sensor further comprises a third doped region in the second pattern, and
wherein impurities in the third doped region have a different conductivity type from that of impurities in the second doped region.
9 . The image sensor of claim 8 , wherein the third doped region is electrically grounded.
10 . The image sensor of claim 8 , wherein a portion of the second portion of the device isolation layer extends between the first and second patterns.
11 . An image sensor comprising:
a substrate having a first surface on which light is incident and a second surface opposite to the first surface;
a pixel isolation structure in a deep trench, which defines a pixel region in the substrate, the pixel isolation structure having a first surface and a second surface opposite to the first surface;
a photoelectric conversion region in the pixel region; and
a device isolation layer provided in first and second shallow trenches and defining a pattern in the pixel region,
wherein the first surface of the pixel isolation structure is coplanar with the first surface of the substrate and the second surface of the pixel isolation structure is coplanar with the second surface of the substrate,
wherein the first shallow trench is recessed into the substrate from the second surface of the substrate to a first depth in a vertical direction perpendicular to the first surface of the substrate, and connected to the deep trench,
wherein the second shallow trench is recessed into the substrate from the second surface of the substrate to a second depth in the vertical direction, and connected to the first shallow trench, and
wherein the first depth is greater than the second depth.
12 . The image sensor of claim 11 , wherein the first shallow trench is connected to the deep trench along a perimeter of the pixel region.
13 . The image sensor of claim 11 , further comprising:
a first doped region contacting the pixel isolation structure in the pixel region and a second doped region in the pattern,
wherein impurities in the first doped region have a different conductivity type from that of impurities in the second doped region, and
wherein the first shallow trench is above the first doped region.
14 . The image sensor of claim 11 , wherein the deep trench penetrates the substrate from the first surface to the second surface of the substrate.
15 . The image sensor of claim 11 , wherein the substrate has a step height difference at a boundary between the first and second shallow trenches.
16 . The image sensor of claim 11 ,
wherein the pattern includes first and second patterns spaced apart from each other, and
wherein a portion of the second shallow trench extends between the first and second patterns.
17 . The image sensor of claim 11 , further comprising:
a transfer gate recessed into the substrate from the second surface of the substrate to a third depth in the vertical direction,
wherein the third depth is greater than the second depth.
18 . The image sensor of claim 17 , wherein the third depth is greater than the first depth.
19 . An image sensor comprising:
a substrate having a first surface and a second surface opposite to each other;
a micro lens on the first surface of the substrate;
a pixel isolation structure in a deep trench, which defines a pixel region in the substrate, the pixel isolation structure having a first surface and a second surface opposite to the first surface;
a photoelectric conversion region in the pixel region;
a first doped region contacting the pixel isolation structure in the pixel region;
a device isolation layer provided in first and second shallow trenches and defining a pattern in the pixel region; and
a second doped region in the pattern,
wherein the first surface of the pixel isolation structure is coplanar with the first surface of the substrate and the second surface of the pixel isolation structure is coplanar with the second surface of the substrate,
wherein impurities in the first doped region have a different conductivity type from that of impurities in the second doped region,
wherein the first shallow trench is recessed into the substrate from the second surface of the substrate to a first depth in a vertical direction perpendicular to the first surface of the substrate, and connected to the deep trench,
wherein the second shallow trench is recessed into the substrate from the second surface of the substrate to a second depth in the vertical direction, and connected to the first shallow trench,
wherein the first shallow trench is above the first doped region, and
wherein the first depth is greater than the second depth.
20 . The image sensor of claim 19 , wherein a difference between the first and second depths ranges from about 1000 Å to about 2800 Å.