Semiconductor device and method of forming inverted EWLB package with vertical e-bar structure
A semiconductor device has an electrical component and an e-bar structure disposed to a side of the electrical component. An encapsulant is deposited over the electrical component and e-bar structure. An RDL is formed over the electrical component, encapsulant, and e-bar structure. The e-bar structure has a core layer, a first conductive layer formed over a first surface of the core layer, and a second conductive layer formed over a second surface of the core layer. The second conductive layer includes a thickness greater than the first conductive layer. The RDL has an insulating layer formed over the electrical component and encapsulant, and a conductive layer formed over the insulating layer. A bump is formed over a contact pad of the e-bar structure opposite the RDL. A contact pad of the electrical component is electrically connected to the RDL opposite the bump.
1 . A semiconductor device, comprising:
an electrical component;
an e-bar structure disposed to a side of the electrical component, wherein the e-bar structure includes,
(a) a core layer,
(b) a first single conductive layer formed over a first surface of the core layer and having a thickness in a range of 17.0-30.0 micrometers, and
(c) a second single conductive layer formed over a second surface of the core layer and having a thickness of at least 40.0 micrometers, wherein the thickness of the second single conductive layer is at least 10.0 micrometers greater than the thickness of the first single conductive layer;
an encapsulant deposited over the electrical component and e-bar structure; and
a redistribution layer (RDL) formed over the electrical component, encapsulant, and e-bar structure.
2 . The semiconductor device of claim 1 , wherein the RDL includes:
an insulating layer formed over the electrical component and encapsulant; and
a conductive layer formed over the insulating layer.
3 . The semiconductor device of claim 1 , further including a bump formed over a contact pad of the second single conductive layer of the e-bar structure opposite the RDL.
4 . The semiconductor device of claim 3 , wherein the contact pad includes a thickness of 40 micrometers or greater.
5 . The semiconductor device of claim 3 , wherein a contact pad of the electrical component is electrically connected to the RDL opposite the bump.
6 . A semiconductor device, comprising:
an electrical component;
an e-bar structure disposed adjacent to the electrical component, wherein the e-bar structure includes,
(a) a core layer,
(b) a first conductive layer formed over a first surface of the core layer and having a thickness in a range of 17.0-30.0 micrometers, and
(c) a second conductive layer formed over a second surface of the core layer and having a thickness of at least 40.0 micrometers, wherein the thickness of the second single conductive layer is greater than the thickness of the first conductive layer; and
a redistribution layer (RDL) formed over the electrical component and e-bar structure.
7 . The semiconductor device of claim 6 , further including an encapsulant deposited over the electrical component and e-bar structure.
8 . The semiconductor device of claim 6 , wherein the RDL includes:
an insulating layer formed over the electrical component; and
a conductive layer formed over the insulating layer.
9 . The semiconductor device of claim 6 , further including a bump formed over a contact pad of the second conductive layer of the e-bar structure opposite the RDL.
10 . The semiconductor device of claim 9 , wherein the contact pad includes a thickness of 40 micrometers or greater.
11 . The semiconductor device of claim 9 , wherein a contact pad of the electrical component is electrically connected to the RDL opposite the bump.
12 . A method of making a semiconductor device, comprising:
providing an electrical component;
disposing an e-bar structure to a side of the electrical component by,
(a) providing a core layer,
(b) forming a first single conductive layer over a first surface of the core layer and having a thickness in a range of 17.0-30.0 micrometers, and
(c) forming a second single conductive layer over a second surface of the core layer and having a thickness of at least 40.0 micrometers, wherein the thickness of the second single conductive layer is at least 10.0 micrometers greater than the thickness of the first single conductive layer;
depositing an encapsulant over the electrical component and e-bar structure; and
forming a redistribution layer (RDL) over the electrical component, encapsulant, and e-bar structure.
13 . The method of claim 12 , wherein forming the RDL includes:
forming an insulating layer over the electrical component and encapsulant; and
forming a conductive layer over the insulating layer.
14 . The method of claim 12 , further including forming a bump over a contact pad of the second single conductive layer of the e-bar structure opposite the RDL.
15 . The method of claim 14 , wherein the contact pad includes a thickness of 40 micrometers or greater.
16 . The method of claim 14 , wherein a contact pad of the electrical component is electrically connected to the RDL opposite the bump.
17 . A method of making a semiconductor device, comprising:
providing an electrical component;
disposing an e-bar structure adjacent to the electrical component by,
(a) providing a core layer,
(b) forming a first conductive layer over a first surface of the core layer and having a thickness in a range of 17.0-30.0 micrometers, and
(c) forming a second conductive layer over a second surface of the core layer and having a thickness of at least 40.0 micrometers, wherein the thickness of the second single conductive layer is greater than the thickness of the first conductive layer; and
forming a redistribution layer (RDL) over the electrical component and e-bar structure.
18 . The method of claim 17 , further including depositing an encapsulant over the electrical component and e-bar structure.
19 . The method of claim 17 , wherein forming the RDL includes:
forming an insulating layer over the electrical component; and
forming a conductive layer formed over the insulating layer.
20 . The method of claim 17 , further including forming a bump over a contact pad of the second conductive layer of the e-bar structure opposite the RDL.
21 . The method of claim 20 , wherein a contact pad of the electrical component is electrically connected to the RDL opposite the bump.