EUV light uniformity control apparatus, EUV exposure equipment including the same, and method of controlling EUV light uniformity by using the control apparatus
An extreme ultraviolet (EUV) light uniformity control apparatus includes a plurality of nano thin-films each having a band shape extending in a first direction that is a scanning direction of EUV exposure equipment and linearly arranged under a reticle of the EUV exposure equipment in a second direction that is perpendicular to the first direction. The apparatus further includes thin film mounts fixing the nano thin-films on both sides in the first direction, and a thin film control device connected to the thin film mounts and controlling the nano thin-films. EUV light from the EUV exposure equipment is projected onto a wafer that is an exposure target, after passing through the nano thin-films twice by being incident to and reflected from the reticle, and the EUV light projected on the wafer is uniformly adjusted by using the thin film control device.
1 . An extreme ultraviolet (EUV) light uniformity control apparatus comprising:
a plurality of nano thin-films each having a band shape extending in a first direction that is a scanning direction of EUV exposure equipment and linearly arranged under a reticle of the EUV exposure equipment in a second direction that is perpendicular to the first direction;
thin film mounts fixing the plurality of nano thin-films on two opposite sides in the first direction; and
a thin film control device connected to the thin film mounts and configured to control the plurality of nano thin-films,
wherein EUV light from the EUV exposure equipment is projected onto a wafer that is an exposure target, after passing through the plurality of nano thin-films twice by being incident to and reflected from the reticle, and
wherein the thin film control device is configured to adjust a uniformity of the EUV light projected on the wafer.
2 . The EUV light uniformity control apparatus of claim 1 , wherein each of the plurality of nano thin-films has a transmittance of about 80% to about 99%, and
wherein the thin film control device is configured to implement a transmittance of less than 80% by overlapping at least two nano thin-films of the plurality of nano thin-films.
3 . The EUV light uniformity control apparatus of claim 1 , wherein each of the plurality of nano thin-films has a width of about 1 to about 15 mm in the second direction and a width of about 40 to about 100 mm in the first direction.
4 . The EUV light uniformity control apparatus of claim 1 , wherein each of the plurality of nano thin-films includes one of silicon (Si), silicon carbide (SIC), silicon nitride (SiNx), and a carbon-based material.
5 . The EUV light uniformity control apparatus of claim 1 , wherein the thin film control device includes a position adjusting device for moving the thin film mounts, and
the thin film control device is configured to control a position of each of the plurality of nano thin-films by moving each of the thin film mounts in at least one of the first direction or the second direction.
6 . The EUV light uniformity control apparatus of claim 5 , wherein the thin film control device is configured to move at least two nano thin-films of the plurality of nano thin-films along the first direction so as to overlap each other.
7 . The EUV light uniformity control apparatus of claim 1 , wherein each of the plurality of nano thin-films includes a material having a transmittance that changes according to a voltage,
the thin film control device includes a voltage applying device that is configured to apply a voltage to each of the plurality of nano thin-films via the thin film mounts, and
the thin film control device is configured to control a transmittance of each of the plurality of nano thin-films by adjusting the voltage applied to the nano thin-film.
8 . The EUV light uniformity control apparatus of claim 1 , wherein each of the thin film mounts includes a cooling device.
9 . The EUV light uniformity control apparatus of claim 1 , wherein the thin film mounts fix each of the plurality of nano thin-films on two opposite sides in the first direction.
10 . Extreme ultraviolet (EUV) exposure equipment comprising:
an EUV source configured to generate and emit EUV light;
a first optical system configured to transfer the EUV light from the EUV source to be incident on a reticle;
a reticle stage on which the reticle is disposed;
a second optical system configured to transfer the EUV light reflected by the reticle to a wafer that is an exposure target; and
an EUV light uniformity control apparatus that is disposed under the reticle, that includes nano thin-films through which the EUV light passes, and that is configured to adjust the EUV light projected on the wafer,
wherein the EUV light uniformity control apparatus comprises thin film mounts fixing each of the nano thin-films on two opposite sides in a first direction.
11 . The EUV exposure equipment of claim 10 , wherein
each of the nano thin-films has a band shape extending in the first direction, wherein the first direction is a scanning direction of the EUV exposure equipment, wherein the nano thin-films are linearly arranged under the reticle in a second direction that is perpendicular to the first direction, and wherein the EUV light uniformity control apparatus comprises:
a thin film control device connected to the thin film mounts and configured to control the nano thin-films,
wherein the EUV light uniformity control apparatus is configured such that the EUV light is projected onto the wafer, after passing through the nano thin-films twice by being incident on and reflected from the reticle, and
wherein the EUV light uniformity control apparatus is configured to adjust the EUV light projected on the wafer to be uniform by using the thin film control device.
12 . The EUV exposure equipment of claim 11 , wherein each of the nano thin-films has a transmittance of about 80% to about 99%, and
wherein the thin film control device is configured to implement a transmittance less than 80% by overlaying at least two nano thin-films of the nano thin-films.
13 . The EUV exposure equipment of claim 11 , wherein each of the nano thin-films includes one of silicon (Si), silicon carbide (SiC), silicon nitride (SiNx), and a carbon-based material.
14 . The EUV exposure equipment of claim 11 , wherein the thin film control device includes a position adjusting device for moving the thin film mounts, and
the thin film control device is configured to control a position of each of the nano thin-films by moving the thin film mounts in at least one of the first direction or the second direction.
15 . The EUV exposure equipment of claim 11 , wherein each of the nano thin-films includes a material having a transmittance that changes according to a voltage,
the thin film control device includes a voltage applying device configured to apply a voltage to each of the nano thin-films via the thin film mounts, and
the thin film control device is configured to control a transmittance of each of the nano thin-films by adjusting the voltage applied to the nano thin-film.
16 . The EUV exposure equipment of claim 11 , further comprising:
a measurement device for measuring an intensity of the EUV light on a wafer stage on which the wafer is disposed; and
a signal processing unit configured to:
calculate a uniformity of the EUV light on the wafer and a transmittance for each of the nano thin-films at a certain position under the reticle based on the intensity, and
transfer a control signal to the thin film control device based on the transmittance for each of the nano thin-films.
17 . The EUV exposure equipment of claim 16 , wherein the signal processing unit is configured to, for each EUV exposure equipment of a plurality of the EUV exposure equipment:
analyze a uniformity of EUV light generated by the EUV exposure equipment,
control nano thin-films in the EUV exposure equipment based on the uniformity of the EUV light generated by the EUV exposure equipment, and
manage the uniformity of the EUV light generated by the EUV exposure equipment.
18 . Extreme ultraviolet (EUV) exposure equipment comprising:
an EUV source configured to generate and emit EUV light;
a first optical system configured to transfer the EUV light from the EUV source to be incident to a reticle;
a reticle stage on which the reticle is disposed;
a second optical system configured to transfer the EUV light reflected by the reticle to a wafer that is an exposure target;
a wafer stage on which the wafer is disposed; and
an EUV light uniformity control apparatus disposed under the reticle and configured to adjust a uniformity of the EUV light on the wafer,
wherein the EUV light uniformity control apparatus comprises:
a plurality of nano thin-films each having a band shape extending in a first direction that is a scanning direction of the EUV exposure equipment and linearly arranged under the reticle in a second direction that is perpendicular to the first direction;
thin film mounts fixing each of the plurality of nano thin-films on two opposite sides in the first direction; and
a thin film control device connected to the thin film mounts and configured to control the plurality of nano thin-films, wherein;
the EUV light is projected onto the wafer, after passing through the nano thin-films twice by being incident on and reflected from the reticle,
the EUV light uniformity control apparatus is configured to adjust the EUV light to be uniform by using the thin film control device, the EUV light being projected on the wafer, and
the thin film control device comprises at least one of a position adjusting device configured to move the thin film mounts or a voltage applying device configured to apply voltages to the plurality of nano thin-films via the thin film mounts.
19 . The EUV exposure equipment of claim 18 , wherein the thin film control device includes the position adjusting device, and
the position adjusting device is configured to move at least two nano thin-films of the plurality of nano thin-films along the first direction so as to overlap each other.
20 . The EUV exposure equipment of claim 18 , wherein each of the plurality of nano thin-films includes a material having a transmittance that changes is according to a voltage,
the thin film control device includes the voltage applying device, and
the voltage applying device is configured to change a transmittance of each of the plurality of nano thin-films by adjusting a voltage applied to the nano thin-film.