Plasma processing apparatus
A plasma processing apparatus includes a process container, a power supply configured to supply radio frequency or microwave power for generating plasma in the process container, a plurality of gas nozzles, each having a gas flow passage therein, and a plurality of protrusions formed integrally with a ceiling wall and/or a sidewall that defines the process container, the plurality of protrusions protruding from the ceiling wall and/or the sidewall. Each of the plurality of protrusions has a gas hole at a leading end of the protrusion. The ceiling wall and/or the sidewall has recesses in which the plurality of gas nozzles is arranged, respectively, such that the gas flow passage of each of the plurality of gas nozzles communicates with the gas hole of each of the plurality of protrusions.
1 . A plasma processing apparatus comprising:
a process container;
a power supply configured to supply radio frequency or microwave power for generating plasma in the process container;
a plurality of gas nozzles, each having a gas flow passage therein; and
a plurality of protrusions formed integrally with a ceiling wall and/or a sidewall that defines the process container, the plurality of protrusions protruding from the ceiling wall and/or the sidewall,
wherein each of the plurality of protrusions has a gas hole at a leading end of the protrusion, and
wherein the ceiling wall and/or the sidewall has recesses in which the plurality of gas nozzles is buried, respectively, and an outlet of each of the plurality of gas nozzles buried in the recess is connected to the gas hole of each of the plurality of protrusions at a position distanced from an outlet of the gas hole of each of the plurality of protrusions, such that the gas flow passage of each of the plurality of gas nozzles communicates with the gas hole of each of the plurality of protrusions.
2 . The plasma processing apparatus of claim 1 , wherein a length of each of the plurality of gas nozzles is longer than a thickness of the ceiling wall and/or the sidewall in which the plurality of gas nozzles is arranged.
3 . The plasma processing apparatus of claim 2 , wherein a diameter of the gas hole is larger than a diameter on an outlet side of the gas flow passage communicating with the gas hole.
4 . The plasma processing apparatus of claim 3 , wherein a length of the gas hole is 5 mm or more.
5 . The plasma processing apparatus of claim 4 , wherein a first groove for degassing is formed on an inner surface of each of the recesses and/or an outer surface of each of the plurality of gas nozzles.
6 . The plasma processing apparatus of claim 5 , wherein the first groove has a leading end groove extending from an inner side surface of each of the recesses to a bottom surface of each of the recesses and/or a leading end groove extending from an outer side surface of each of the plurality of gas nozzles to a leading end surface of each of the plurality of gas nozzles.
7 . The plasma processing apparatus of claim 6 , wherein the leading end groove formed on the leading end surface of each of the plurality of gas nozzles extends to a position radially inward than an opening of the gas hole communicating with each of the plurality of gas nozzles.
8 . The plasma processing apparatus of claim 1 , wherein a diameter of the gas hole is larger than a diameter on an outlet side of the gas flow passage communicating with the gas hole.
9 . The plasma processing apparatus of claim 1 , wherein a length of the gas hole is 5 mm or more.
10 . The plasma processing apparatus of claim 1 , wherein a first groove for degassing is formed on an inner surface of each of the recesses and/or an outer surface of each of the plurality of gas nozzles.
11 . The plasma processing apparatus of claim 1 , wherein a second groove for taking-out each of the plurality of gas nozzles is formed on an inner surface of the gas flow passage of each of the plurality of gas nozzles.