Plasma processing apparatus and plasma processing method
View Patent ↗There is provided a technique capable of improving plasma uniformity in a parallel plate-type plasma processing apparatus having a plasma excitation frequency of a VHF band or an UHF band. A plasma processing apparatus according to an exemplary embodiment includes a process container, a stage provided in the process container, a dielectric plate provided above the upper surface of the stage via a space in the process container, and an upper electrode provided above the dielectric plate. An gap is provided between the upper electrode and the dielectric plate, and the width of the gap is non-uniform in a direction in which the dielectric plate extends.
1 . A plasma processing apparatus comprising:
a process container;
a stage provided in the process container;
a dielectric plate provided above the stage via a space in the process container;
an upper electrode provided above the dielectric plate;
a waveguide that guides a high frequency of a VHF band or an UHF band;
an end portion of the waveguide that is located toward the space and radiates the high frequency into the space; and
a dielectric rod interposed between the upper electrode and the dielectric plate and extending along a central axial line of the process container,
wherein a gap is provided between the upper electrode and the dielectric plate,
wherein a width of the gap is non-uniform in a direction in which the dielectric plate extends, and
wherein the gap is defined by separating the upper electrode and the dielectric plate from each other in a state where the end portion of the upper electrode and the end portion of the dielectric plate are in close contact with each other.
2 . The plasma processing apparatus of claim 1 , wherein an end portion of the dielectric plate and an end portion of the upper electrode are connected to each other by pressing by an elastic member.
3 . The plasma processing apparatus of claim 1 , wherein the width of the gap increases from the end portion of each of the upper electrode and the dielectric plate toward a center portion thereof.
4 . The plasma processing apparatus of claim 1 , wherein the width of the gap decreases from the end portion of each of the upper electrode and the dielectric plate toward a center portion thereof.
5 . The plasma processing apparatus of claim 1 , wherein a lower surface of the upper electrode exposed in the gap has a wavy shape.
6 . The plasma processing apparatus of claim 1 , further comprising: a drive mechanism that moves the dielectric rod in a reference direction intersecting a lower surface of the upper electrode exposed to the gap,
wherein the dielectric rod is connected to or joined to the dielectric plate, or is integrated with the dielectric plate.
7 . The plasma processing apparatus of claim 6 , wherein the drive mechanism drives the dielectric rod in the reference direction to increase/decrease the width of the gap.
8 . The plasma processing apparatus of claim 7 , wherein the drive mechanism comprises:
a motor,
a first pulley,
an insulating shaft,
a belt, and
a driving part,
wherein the motor is provided on the upper electrode,
wherein the first pulley, the belt, and the driving part are provided in the upper electrode,
wherein the insulating shaft is connected to the motor,
wherein the first pulley connects the insulating shaft and the belt,
wherein the driving part connects the dielectric rod and the belt and drives the dielectric rod in the reference direction by using power of the motor transmitted via the insulating shaft and the belt,
wherein the driving part includes a second pulley and a shaft,
wherein the second pulley connects the belt and the shaft, and
wherein the shaft is connected to the dielectric rod via a floating joint.
9 . The plasma processing apparatus of claim 6 , wherein the drive mechanism moves the dielectric rod along the reference direction so as to separate the upper electrode and the dielectric plate from each other, so that the width of the gap increases.
10 . The plasma processing apparatus of claim 9 , wherein the drive mechanism comprises:
a motor,
a first pulley,
an insulating shaft,
a belt, and
a driving part,
wherein the motor is provided on the upper electrode,
wherein the first pulley, the belt, and the driving part are provided in the upper electrode,
wherein the insulating shaft is connected to the motor,
wherein the first pulley connects the insulating shaft and the belt,
wherein the driving part connects the dielectric rod and the belt and drives the dielectric rod in the reference direction by using power of the motor transmitted via the insulating shaft and the belt,
wherein the driving part includes a second pulley and a shaft,
wherein the second pulley connects the belt and the shaft, and
wherein the shaft is connected to the dielectric rod.
11 . The plasma processing apparatus of claim 1 , wherein the dielectric plate is a shower plate.
12 . The plasma processing apparatus of claim 11 , wherein the upper electrode has a plurality of first gas discharge holes,
wherein the dielectric plate has a plurality of second gas discharge holes,
wherein the plurality of first gas discharge holes and the plurality of second gas discharge holes communicate with each other through the gap, and
wherein at least some of the plurality of first gas discharge holes and at least some of the plurality of second gas discharge holes are provided so as to overlap each other.
13 . The plasma processing apparatus of claim 1 , wherein the gap communicates with a gas pipe connected to an external gas supply part.
14 . The plasma processing apparatus of claim 1 , wherein the stage comprises:
a main body formed of an insulator; and
a conductive layer provided in the main body,
wherein the conductive layer has a shortest distance from an upper surface of the stage among one or more conductive layers provided in the stage and is formed in an annular shape.
15 . The plasma processing apparatus of claim 14 , wherein the conductive layer has an outer diameter smaller than a diameter of a substrate placed on the stage.
16 . The plasma processing apparatus of claim 14 , wherein the conductive layer is any one of an electrode for generating an electrostatic attractive force between the stage and a substrate placed on the stage, an electrode to which a high frequency is supplied, and a grounded electrode.
17 . The plasma processing apparatus of claim 14 , wherein the conductive layer is formed in a mesh shape.