Method for producing wetting agent for semiconductor, containing polyvinyl alcohol composition, polishing composition containing wetting agent for semiconductor, obtained by the production method, and method for producing polishing composition
To provide a polyvinyl alcohol composition effectively suppressed in generation of an aggregated product, in a method for producing a wetting agent for a semiconductor, containing a polyvinyl alcohol composition. A method for producing a wetting agent for a semiconductor, containing a polyvinyl alcohol composition, wherein the polyvinyl alcohol composition is obtained through an addition-in-liquid step of adding into the inside of any one solution of a first liquid containing polyvinyl alcohol and water and a second liquid other than the first liquid, the other liquid of the first liquid and the second liquid.
1 . A method for producing a wetting agent for a semiconductor, containing a polyvinyl alcohol composition, wherein:
the polyvinyl alcohol composition is obtained through an addition-in-liquid step of adding into an inside of a first liquid containing polyvinyl alcohol and water a second liquid other than the first liquid, or adding the first liquid into an inside of the second liquid; and
the addition-in-liquid step is carried out in a stirring vessel having a stirring blade, and a ratio (L/D) of a stirring blade diameter (L) to an inner diameter (D) of the stirring vessel is 0.1 or more and 0.9 or less.
2 . The method for producing a wetting agent for a semiconductor according to claim 1 , further comprising a filtration step of filtering the polyvinyl alcohol composition obtained through the addition-in-liquid step.
3 . The method for producing a wetting agent for a semiconductor according to claim 1 , wherein the first liquid is obtained by heating a polyvinyl alcohol dispersion liquid in which polyvinyl alcohol is dispersed in water, to 85-98° C. and then cooling the polyvinyl alcohol dispersion liquid to 15-50° C.
4 . The method for producing a wetting agent for a semiconductor according to claim 1 , wherein the addition-in-liquid step is a step of adding the first liquid into the second liquid retained in a vessel having a stirring tool.
5 . The method for producing a wetting agent for a semiconductor according to claim 1 , wherein a content of the polyvinyl alcohol in the polyvinyl alcohol composition in the addition-in-liquid step is 10% by mass or less based on a total mass of the polyvinyl alcohol composition.
6 . The method for producing a wetting agent for a semiconductor according to claim 1 , further comprising an alkali addition step of adding an alkali to the polyvinyl alcohol composition obtained through the addition-in-liquid step.
7 . A polishing composition comprising a wetting agent for a semiconductor, produced by the production method according to claim 1 , and an abrasive.
8 . A method for producing a polishing composition, comprising mixing a wetting agent for a semiconductor, produced by the production method according to claim 1 , and an abrasive.
9 . The method for producing a wetting agent for a semiconductor according to claim 1 , wherein the addition-in-liquid step is carried out by using a supply pipe with an inner size of 5 mm or more and 50 cm or less.
10 . The method for producing a wetting agent for a semiconductor according to claim 1 , wherein the addition-in-liquid step is carried out by using a supply pipe and the supply pipe is open toward the bottom of the stirring vessel.
11 . The method for producing a wetting agent for a semiconductor according to claim 1 , wherein a supply speed of adding in the addition-in-liquid step is 50 mL/min or more and 20 L/min or less.
12 . A method for producing a polishing composition containing a polyvinyl alcohol composition, wherein:
the polyvinyl alcohol composition is obtained through an addition-in-liquid step of adding into an inside of a first liquid containing polyvinyl alcohol and water a second liquid other than the first liquid, or adding the first liquid into an inside of the second liquid; and
the addition-in-liquid step is carried out in a stirring vessel having a stirring blade, and a ratio (L/D) of a stirring blade diameter (L) to an inner diameter (D) of the stirring vessel is 0.1 or more and 0.9 or less.
13 . The method for producing a polishing composition according to claim 12 , wherein the addition-in-liquid step is carried out by using a supply pipe with an inner size of 5 mm or more and 50 cm or less.
14 . The method for producing a polishing composition according to claim 12 , wherein the addition-in-liquid step is carried out by using a supply pipe and the supply pipe is open toward the bottom of the stirring vessel.
15 . The method for producing a polishing composition according to claim 12 , wherein a supply speed of adding in the addition-in-liquid step is 50 mL/min or more and 20 L/min or less.