Semiconductor device
A semiconductor device includes a substrate having an active area and a non-active area. An extra pad layer is disposed on the active area of the substrate. A first contact layer is disposed in a contact hole defined inside the substrate from a surface of the extra pad layer. A first silicide layer is disposed on both sidewalls of the first contact layer. A buried insulating layer is buried in the contact hole at lateral sides of the first contact layer and the first silicide layer. A second silicide layer is disposed on an upper surface and sidewalls of the extra pad layer. A second contact layer is on the buried insulating layer and the second silicide layer and is in direct contact with the second silicide layer.
1 . A semiconductor device comprising:
a substrate having an active area and a non-active area;
an extra pad layer disposed on the active area of the substrate;
a first contact layer disposed in a contact hole defined inside the substrate from a surface of the extra pad layer;
a first silicide layer disposed on both sidewalls of the first contact layer;
a buried insulating layer buried in the contact hole at lateral sides of the first contact layer and the first silicide layer;
a second silicide layer disposed on an upper surface and sidewalk of the extra pad layer; and
a second contact layer on the buried insulating layer and the second silicide layer and in direct contact with the second silicide layer.
2 . The semiconductor device of claim 1 , wherein the first contact layer and the first silicide layer are first contact plugs in contact with the active area of the substrate.
3 . The semiconductor device of claim 1 , wherein the first contact layer comprises a protrusion part protruding from the upper surface of the extra pad layer.
4 . The semiconductor device of claim 1 , wherein the second silicide layer is disposed on an entirety of the upper surface and sidewalls of the extra pad layer.
5 . The semiconductor device of claim 1 , wherein the second silicide layer is disposed inside a portion of the upper surface of the extra pad layer, and is disposed on an entirety of the sidewalls of the extra pad layer.
6 . The semiconductor device of claim 1 , wherein the first silicide layer is composed of a same material as the second silicide layer.
7 . The semiconductor device of claim 1 , wherein:
a recess hole exposing the second silicide layer is further defined on an upper surface of the buried insulating layer; and
the second contact layer is buried in the recess hole.
8 . The semiconductor device of claim 1 , wherein the buried insulating layer comprises a liner layer in direct contact with the first silicide layer and the second silicide layer in the contact hole, and a liner buried layer filling the contact hole on the liner layer.
9 . The semiconductor device of claim 1 , wherein the second contact layer is a second contact plug contacting the active area of the substrate through the second silicide layer and the extra pad layer.
10 . A semiconductor device comprising:
a substrate having an active area and a non-active area;
an extra pad layer disposed on the active area of the substrate;
a first contact silicide layer disposed in a contact hole defined inside the substrate from a surface of the extra pad layer;
a buried insulating layer buried in the contact hole on lateral sides of the first contact silicide layer;
a second silicide layer disposed on an upper surface and sidewalls of the extra pad layer; and
a second contact layer on the buried insulating layer and the second silicide layer and in direct contact with the second silicide layer.
11 . The semiconductor device of claim 10 , wherein:
the first contact silicide layer is a first contact plug in contact with the active area of the substrate; and
the second contact layer is a second contact plug contacting the active area of the substrate through the second silicide layer and the extra pad layer.
12 . The semiconductor device of claim 10 , wherein the first contact silicide layer is composed of a metal silicide layer.
13 . The semiconductor device of claim 10 , wherein the first contact silicide layer is composed of a same material as the second silicide layer.
14 . The semiconductor device of claim 10 , wherein the first contact silicide layer comprises a protrusion part protruding from the upper surface of the extra pad layer.
15 . The semiconductor device of claim 10 , wherein the second silicide layer is disposed inside a portion of the upper surface of the extra pad layer, and is disposed on an entirety of the sidewalls of the extra pad layer.
16 . A semiconductor device comprising:
a substrate having an active area and a non-active area;
an extra pad layer disposed on the active area of the substrate;
a pad isolation insulating layer disposed on the non-active area of the substrate and insulating the extra pad layer;
a first contact layer disposed in a contact hole defined inside the substrate from a surface of the extra pad layer;
a first silicide layer disposed on both sidewalls of the first contact layer;
a first conductive layer disposed on the first contact layer and the first silicide layer;
a buried insulating layer buried in the contact hole at lateral sides of the first contact layer and the first silicide layer;
a second silicide layer disposed on an upper surface and sidewalls of the extra pad layer;
a second contact layer on the buried insulating layer and the second silicide layer and in direct contact with the second silicide layer; and
a second conductive layer disposed on the pad isolation insulating layer and insulated from the second contact layer.
17 . The semiconductor device of claim 16 , wherein the first contact layer extends in a direction perpendicular to a surface of the substrate and comprises a protrusion part protruding from the upper surface of the extra pad layer.
18 . The semiconductor device of claim 16 , wherein:
an upper width of the first contact layer is less than a width of the first conductive layer; and
the upper width of the first silicide layer is equal to the width of the first conductive laver.
19 . The semiconductor device of claim 16 , wherein:
a buffer insulating layer is further disposed on the pad isolation insulating layer; and
the second conductive layer is disposed on the buffer insulating layer.
20 . The semiconductor device of claim 16 , wherein:
the first conductive layer and the second conductive layer are a first conductive line and a second conductive line extending in a first direction on the substrate, respectively;
the first contact layer and the first silicide layer are disposed under the first conductive line; and
the second contact layer is disposed between the first conductive line and the second conductive line.