Semiconductor device having Schottky barrier diode and p-n junction diode
A semiconductor device includes a first electrode, a first semiconductor layer of a first conductivity type located on the first electrode, a second semiconductor layer of a second conductivity type located on a portion of the first semiconductor layer, a metal layer located on the first and second semiconductor layers, a second electrode located on the metal layer, a bonding member connected to an upper surface of the second electrode, and a conductive member located between the second semiconductor layer and the metal layer. The metal layer has a Schottky junction with the first semiconductor layer. The conductive member is made of a different material from the metal layer. An area ratio of the conductive member in a region directly under the bonding member is higher than an area ratio of the conductive member in a region other than the region directly under the bonding member.
1 . A semiconductor device, comprising:
a first electrode;
a first semiconductor layer located on the first electrode, the first semiconductor layer being of a first conductivity type;
a second semiconductor layer located on a portion of the first semiconductor layer, the second semiconductor layer being of a second conductivity type;
a metal layer located on the first semiconductor layer and on the second semiconductor layer, the metal layer having a Schottky junction with the first semiconductor layer;
a second electrode located on the metal layer;
a bonding member connected to an upper surface of the second electrode; and
a plurality of conductive members located between the second semiconductor layer and the metal layer, the conductive members being made of a different material from the metal layer, an arrangement density of the conductive members in a region directly under the bonding member being higher than an arrangement density of the conductive members in a region other than the region directly under the bonding member, wherein
the plurality of conductive members are arranged at a first period along a first direction and at a second period along a second direction in the region directly under the bonding member,
the plurality of conductive members are arranged at a third period along the first direction and at a fourth period along the second direction in the region other than the region directly under the bonding member,
the third period is longer than the first period, and
the fourth period is longer than the second period.
2 . The device according to claim 1 , further comprising:
an insulating member located in the region directly under the bonding member,
the insulating member contacting the second semiconductor layer and the conductive member.
3 . The device according to claim 2 , wherein
the insulating member has a ring shape surrounding the conductive member.
4 . The device according to claim 1 , further comprising:
a plurality of third semiconductor layers located on an other portion of the first semiconductor layer,
the plurality of third semiconductor layers being of the second conductivity type.
5 . The device according to claim 4 , wherein
the plurality of third semiconductor layers is stripe-shaped and extends in a third direction.
6 . The device according to claim 1 , wherein
the first semiconductor layer and the second semiconductor layer include silicon and carbon.
7 . The device according to claim 1 , wherein the third period is twice the first period, and the fourth period is twice the second period.
8 . A semiconductor device, comprising:
a first electrode;
a first semiconductor layer located on the first electrode, the first semiconductor layer being of a first conductivity type;
a second semiconductor layer located on the first semiconductor layer in a plurality of first regions, the second semiconductor layer being of a second conductivity type;
a metal layer located on the first semiconductor layer and on the second semiconductor layer, the metal layer having a Schottky junction with the first semiconductor layer in a second region;
a second electrode located on the metal layer; and
a bonding member connected to an upper surface of the second electrode,
an arrangement density of the first regions in a region directly under the bonding member being greater than an arrangement density of the first regions in a region other than the region directly under the bonding member, wherein
the plurality of first regions are arranged at a first period along a first direction and at a second period along a second direction in the region directly under the bonding member,
the plurality of first regions are arranged at a third period along the first direction and at a fourth period along the second direction in the region other than the region directly under the bonding member,
the third period is longer than the first period, and
the fourth period is longer than the second period.
9 . The device according to claim 8 , further comprising:
a conductive member located between the second semiconductor layer and the metal layer in the first region.
10 . The device according to claim 8 , wherein
a plurality of the conductive members is provided, and
an arrangement density of the conductive members in the region directly under the bonding member is greater than an arrangement density of the conductive members in the region other than the region directly under the bonding member.
11 . The device according to claim 8 , further comprising:
an insulating member located in the region directly under the bonding member,
the insulating member contacting the second semiconductor layer and the conductive member.
12 . The device according to claim 11 , wherein
the insulating member has a ring shape surrounding the conductive member.
13 . The device according to claim 8 , further comprising:
a plurality of third semiconductor layers located on an other portion of the first semiconductor layer,
the plurality of third semiconductor layers being of the second conductivity type.
14 . The device according to claim 13 , wherein
the plurality of third semiconductor layers is stripe-shaped and extends in a third direction.
15 . The device according to claim 8 , wherein
the first semiconductor layer and the second semiconductor layer include silicon and carbon.
16 . The device according to claim 8 , wherein the third period is twice the first period, and the fourth period is twice the second period.
17 . A semiconductor device, comprising:
a first electrode;
a first semiconductor layer located on the first electrode, the first semiconductor layer being of a first conductivity type;
a second semiconductor layer located on a portion of the first semiconductor layer, the second semiconductor layer being of a second conductivity type;
a metal layer located on the first semiconductor layer and on the second semiconductor layer, the metal layer having a Schottky junction with the first semiconductor layer;
a second electrode located on the metal layer; and
a plurality of conductive members located between the second semiconductor layer and the metal layer, the conductive members being made of a different material from the metal layer, an arrangement density of the conductive members in a central region of a cell region being higher than an arrangement density of the conductive members in a peripheral region of the cell region, wherein
the plurality of conductive members are arranged at a first period along a first direction and at a second period along a second direction in the central region,
the plurality of conductive members are arranged at a third period along the first direction and at a fourth period along the second direction in the peripheral region,
the third period is longer than the first period, and
the fourth period is longer than the second period.
18 . The device according to claim 17 , wherein
the first semiconductor layer and the second semiconductor layer include silicon and carbon.
19 . The device according to claim 17 , wherein the third period is twice the first period, and the fourth period is twice the second period.