Semiconductor memory device
Active regions defined by device isolation layer are provided on a substrate. A word line crossing the active regions and a gate dielectric layer between the word line and the active regions are provided. A capping insulating pattern covering an upper surface of the word line and a bit line on the word line are provided. The word line may include a first conductive pattern and a second conductive pattern on the first conductive pattern. The first conductive pattern may include a first metal element. The second conductive pattern may include the first metal element, a work function adjustment element, and a diffusion barrier element. An atomic radius of the diffusion barrier element may be smaller than an atomic radius of the first metal element.
1 . A semiconductor memory device, comprising:
active regions on a substrate, the active regions defined by a device isolation layer;
a word line crossing the active regions;
a gate dielectric layer between the word line and the active regions;
a capping insulating pattern at least partially covering an upper surface of the word line; and
a bit line on the word line, wherein
the word line includes a first conductive pattern and a second conductive pattern on the first conductive pattern,
the first conductive pattern includes a first metal element,
the second conductive pattern includes the first metal element, a work function adjustment element, and a diffusion barrier element, and
an atomic radius of the diffusion barrier element is smaller than an atomic radius of the first metal element.
2 . The semiconductor memory device of claim 1 , wherein each of the first conductive pattern and the second conductive pattern further includes nitrogen.
3 . The semiconductor memory device of claim 2 , wherein the atomic radius of the diffusion barrier element is larger than an atomic radius of nitrogen.
4 . The semiconductor memory device of claim 1 , wherein the diffusion barrier element is silicon (Si), germanium (Ge), aluminum (Al), or vanadium (V).
5 . The semiconductor memory device of claim 1 , wherein a grain size of the second conductive pattern is smaller than a grain size of the first conductive pattern.
6 . The semiconductor memory device of claim 1 , wherein the work function adjustment element is lanthanum (La), strontium (Sr), antimony (Sb), yttrium (Y), aluminum (Al), tantalum (Ta), hafnium (Hf), iridium (Ir), zirconium (Zr), or magnesium (Mg).
7 . The semiconductor memory device of claim 1 , further comprising:
a third conductive pattern on the second conductive pattern, wherein
the second conductive pattern covers lower and side surfaces of the third conductive pattern.
8 . The semiconductor memory device of claim 7 , wherein the third conductive pattern includes the first metal element, the work function adjustment element, and nitrogen.
9 . The semiconductor memory device of claim 8 , wherein a concentration of the work function adjustment element in the third conductive pattern decreases from an upper portion to a lower portion.
10 . The semiconductor memory device of claim 8 , wherein a concentration of the work function adjustment element in the second conductive pattern is lower than a concentration of the work function adjustment element in the third conductive pattern.
11 . The semiconductor memory device of claim 1 , wherein a sidewall of the second conductive pattern contacts the gate dielectric layer.
12 . The semiconductor memory device of claim 1 , wherein a ratio of the diffusion barrier element in the second conductive pattern is about 5 at % to about 30 at %.
13 . A semiconductor memory device, comprising: active regions on a substrate, the active regions defined by a device isolation layer; a word line crossing the active regions; a gate dielectric layer between the word line and the active regions; a capping insulating pattern at least partially covering an upper surface of the word line; and a bit line on the word line, wherein the word line includes a first conductive pattern and a second conductive pattern on the first conductive pattern, the first conductive pattern includes a first metal element, the second conductive pattern includes the first metal element, a work function adjustment element, and a diffusion barrier element, and a grain size of the second conductive pattern is smaller than a grain size of the first conductive pattern.
14 . The semiconductor memory device of claim 13 , wherein the first conductive pattern includes nitrogen, the second conductive pattern includes nitrogen, and the diffusion barrier element has an atomic radius larger than an atomic radius of nitrogen.
15 . The semiconductor memory device of claim 13 , further comprising:
a third conductive pattern on the second conductive pattern, wherein
the second conductive pattern covers lower and side surfaces of the third conductive pattern.
16 . The semiconductor memory device of claim 15 , wherein the third conductive pattern includes the first metal element, the work function adjustment element, and nitrogen.
17 . The semiconductor memory device of claim 16 , wherein a concentration of the work function adjustment element in the third conductive pattern decreases from an upper portion to a lower portion.
18 . The semiconductor memory device of claim 17 , wherein a concentration of the work function adjustment element in the second conductive pattern is lower than a concentration of the work function adjustment element in the third conductive pattern.
19 . A semiconductor memory device, comprising:
active regions on a substrate, the active regions defined by a device isolation layer and including a first impurity region and a second impurity region;
word lines extending on the active regions and extending in a first direction;
capping insulating patterns at least partially covering upper surfaces of each of the word lines;
bit lines on the word lines and extending in a second direction crossing the first direction;
contact plugs between the bit lines and connected to the second impurity region; and
data storage units on the contact plugs, wherein
each of the word lines includes a first conductive pattern and a second conductive pattern on the first conductive pattern,
the first conductive pattern includes a first metal element,
the second conductive pattern includes the first metal element, a work function adjustment element, and a diffusion barrier element, and
an atomic radius of the diffusion barrier element is smaller than an atomic radius of the first metal element.
20 . The semiconductor memory device of claim 19 , wherein a grain size of the second conductive pattern is smaller than a grain size of the first conductive pattern.