IP Library › Granted Patent US 12,641,926
Granted Patent B2
US 12,641,926 · App. 17/702,414 · Granted May 26, 2026

Light-emitting diode and display module using the same

Inventors: Myunghee Kim (Suwon-si, KR); Seungran Park (Suwon-si, KR); Youngki Jung (Suwon-si, KR); Chulgyu Jung (Suwon-si, KR)
Assignee: SAMSUNG ELECTRONICS CO., LTD.
H10H20/8312H10H20/857H10W90/00
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Quick Facts
Patent No.
US 12,641,926
App. No.
17/702,414
Granted
May 26, 2026
Kind
B2
Abstract

A light-emitting diode and a display module using the same is disclosed. The light-emitting diodes includes a first semiconductor layer, an active layer provided on the first semiconductor layer, a second semiconductor layer provided on the active layer, a first chip electrode covering a first portion of an upper surface of the second semiconductor layer and a portion of a first side surface of the second semiconductor layer, and a second chip electrode covering a second portion of the upper surface of the second semiconductor layer different from the first portion of the upper surface of the second semiconductor layer and covering a second side surface of the second semiconductor layer different from the first side surface of the second semiconductor layer.

Claims (43)

1 . A light-emitting diode comprising:

a first semiconductor layer;

an active layer provided on the first semiconductor layer;

a second semiconductor layer provided on the active layer;

a first chip electrode covering a first portion of a light-emitting surface of the second semiconductor layer and a portion of a first side surface of the second semiconductor layer; and

a second chip electrode covering a second portion of the light-emitting surface of the second semiconductor layer different from the first portion of the light-emitting surface of the second semiconductor layer and covering a second side surface of the second semiconductor layer different from the first side surface of the second semiconductor layer,

wherein the first chip electrode is provided on a first side surface of the active layer and a first side surface of the first semiconductor layer, and

wherein the second chip electrode is provided on a second side surface of the active layer and a second side surface of the first semiconductor layer.

2 . The light-emitting diode of claim 1 , wherein the first chip electrode comprises:

a first portion covering the first portion of the light-emitting surface of the second semiconductor layer;

a second portion extending from the first portion of the first chip electrode and covering the first side surface of the second semiconductor layer; and

a third portion extending from the first portion of the first chip electrode and connected to the first semiconductor layer.

3 . The light-emitting diode of claim 2 , wherein the second portion is configured to extend to a side of the active layer or a side of the first semiconductor layer.

4 . The light-emitting diode of claim 2 , further comprising:

an insulating layer provided between the third portion of the first chip electrode and the second semiconductor layer and between the third portion of the first chip electrode and the active layer such that the third portion is not in direct contact with the second semiconductor layer and the active layer.

5 . The light-emitting diode of claim 2 , wherein the third portion has a length equal to or greater than a combined height of the second semiconductor layer and the active layer such that the third portion reaches the first semiconductor layer.

6 . The light-emitting diode of claim 1 , wherein the second chip electrode comprises:

a first portion covering the second portion of the light-emitting surface of the second semiconductor layer; and

a second portion extending from the first portion of the second chip electrode and covering the second side surface of the second semiconductor layer.

7 . The light-emitting diode of claim 6 , wherein the light-emitting diode further includes an insulating film covering the light-emitting surface of the second semiconductor layer and a side surface of the second semiconductor layer, and

wherein the second chip electrode further includes a third portion extending from the first portion of the second chip electrode and connected to the second semiconductor layer through the insulating film.

8 . The light-emitting diode of claim 1 , wherein the first chip electrode and the second chip electrode are asymmetrically disposed with respect to the light-emitting diode.

9 . The light-emitting diode of claim 1 , wherein the first chip electrode and the second chip electrode are symmetrically disposed with respect to the light-emitting diode.

10 . A display module comprising:

a substrate having a plurality of mounting grooves on one surface;

a plurality of light-emitting diodes configured to emit light and respectively mounted in the plurality of mounting grooves; and

a driving circuit configured to generate driving signals of the plurality of light-emitting diodes,

wherein each of the plurality of light-emitting diodes comprises:

a first semiconductor layer and a second semiconductor layer,

an active layer provided between the first semiconductor layer and the second semiconductor layer,

a first chip electrode covering a first portion of a light-emitting surface of the second semiconductor layer and a portion of a first side surface of the second semiconductor layer, and

a second chip electrode covering a second portion of the light-emitting surface of the second semiconductor layer different from the first portion of the light-emitting surface of the second semiconductor layer and covering a second side surface of the second semiconductor layer different from the first side surface of the second semiconductor layer, and

wherein each of the plurality of mounting grooves includes a first substrate electrode pad to which the first chip electrode is electrically connected, and a second substrate electrode pad to which the second chip electrode is electrically connected, and

wherein the first chip electrode is provided on a first side surface of the active layer and a first side surface of the first semiconductor layer, and

wherein the second chip electrode is provided on a second side surface of the active layer and a second side surface of the first semiconductor layer.

11 . The display module of claim 10 , wherein the first substrate electrode pad includes a first portion provided around one side of the respective mounting groove, and

a second portion extending to the first portion and extending to an inner circumferential surface of the respective mounting groove.

12 . The display module of claim 11 , wherein the first portion or the second portion of the first substrate electrode pad is configured to be electrically connected to the first chip electrode.

13 . The display module of claim 10 , wherein the second substrate electrode pad includes a first portion provided around one side of the respective mounting groove, and

a second portion extending to the first portion and extending to an inner circumferential surface of the respective mounting groove.

14 . The display module of claim 11 , wherein the first portion or the second portion of the first substrate electrode pad is configured to be electrically connected to the second chip electrode.

15 . The display module of claim 10 , wherein a portion of the first substrate electrode pad is not electrically connected to the first chip electrode and is configured to be covered by an insulating film, and

a portion of the second substrate electrode pad is not electrically connected to the second chip electrode and is configured to be covered by the insulating film.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 23, 2022
From: KIM, MYUNGHEE; PARK, SEUNGRAN; JUNG, YOUNGKI; JUNG, CHULGYU
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 059380/0815 →
Priority Claims (1)
KR 10-2021-0064782 · May 20, 2021 · national
Continuity (2)
Continuation PCTKR2021016123 · Nov 8, 2021
Related Publication 20220376139A1 · Nov 24, 2022
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