Read for memory cell with threshold switching selector
Technology for reading memory cells in a cross-bar memory array. Each cell has a threshold switching selector in series with a programmable resistance memory element. A current diverting resistor is connected to a selected word line while a read current is driven to the selected word line. Driving the read current to the selected word line causes a voltage across the memory cell to increase until the threshold switching selector switches on. After the threshold switching selector switches on the voltage across the memory cell drops rapidly thereby resulting in a snapback current. Some of the read current is diverted to the current diverting resistor as the voltage across the memory cell increases. When the threshold switching selector switches on the resistor continues to divert current from flowing through the memory cell to prevent excessive current from inadvertently changing the state of the programmable resistance memory element.
1 . An apparatus comprising:
a cross-point memory array, the cross-point memory array comprising a set of first conductive lines, a set of second conductive lines, and memory cells, each memory cell having a programmable resistance memory element in series with a threshold switching selector; and
a control circuit in communication with the cross-point memory array, the control circuit configured to:
drive a read current to a selected first conductive line connected to a selected memory cell connected between the selected first conductive line and a selected second conductive line while providing a select voltage to the selected second conductive line, wherein the read current alters the voltage on the selected first conductive line to increase a difference in voltage between the selected first conductive line and the selected second conductive line until the threshold switching selector of the selected memory cell switches on;
divert an increasing amount of the read current from the selected first conductive line while allowing a voltage on the selected first conductive line to change to increase a voltage across the selected memory cell until the threshold switching selector of the selected memory cell switches on;
divert a decreasing amount of the read current from the selected first conductive line after the threshold switching selector of the selected memory cell switches on while allowing a voltage on the selected first conductive line to change until a voltage across the selected memory cell stabilizes; and
sense the selected memory cell in response to the read current passing through the selected memory cell after the voltage across the selected memory cell stabilizes.
2 . The apparatus of claim 1 , wherein:
the apparatus further comprises a resistor having a first terminal and a second terminal; and
the control circuit is further configured to:
provide a first voltage to the first terminal of the resistor, the first voltage being less than a threshold voltage of the threshold switching selector;
connect the second terminal of the resistor to the selected first conductive line to thereby divert the increasing amount of the read current through the resistor until the threshold switching selector of the selected memory cell switches on; and
maintain the connection of the second terminal of the resistor to the selected first conductive line after the threshold switching selector of the selected memory cell switches on to thereby divert the decreasing amount of the read current through the resistor.
3 . The apparatus of claim 2 , wherein:
a snapback current results from a voltage across the threshold switching selector falling from the threshold voltage of the threshold switching selector to an offset voltage of the threshold switching selector after the threshold switching selector switches on; and
the control circuit is further configured to maintain the connection of the second terminal of the resistor to the selected first conductive line to divert current through the resistor as the snapback current dissipates to thereby reduce current flow through the programmable resistance memory element of the selected memory cell as the snapback current dissipates.
4 . The apparatus of claim 3 , wherein the control circuit is further configured to:
disconnect the second terminal of the resistor from the selected first conductive line after the threshold switching selector in the selected memory cell switches on and prior to sensing the selected memory cell in response to the read current.
5 . The apparatus of claim 3 , wherein the control circuit is further configured to:
maintain the connection of the second terminal of the resistor to the selected first conductive line while sensing the selected memory cell in response to the read current.
6 . The apparatus of claim 2 , wherein:
the select voltage provided to the selected second conductive line is approximately ground;
the control circuit driving the read current to the selected first conductive line increases a voltage on the selected first conducive line until the threshold switching selector of the selected memory cell switches on; and
the first voltage applied to the first terminal of the resistor is between ground and the threshold voltage of the threshold switching selector.
7 . The apparatus of claim 2 , wherein:
the select voltage provided to the selected second conductive line is a second voltage having a magnitude that is greater than the threshold voltage of the threshold switching selector;
the control circuit driving the read current to the selected first conductive line reduces a voltage on the selected first conducive line until the threshold switching selector of the selected memory cell switches on; and
the first voltage applied to the first terminal of the resistor is approximately half of the second voltage.
8 . The apparatus of claim 1 , wherein the threshold switching selector comprises an Ovonic Threshold Switch (OTS).
9 . The apparatus of claim 1 , wherein the programmable resistance memory element comprises a magnetoresistive memory element.
10 . The apparatus of claim 1 , wherein the programmable resistance memory element comprises a phase change memory element.
11 . A method for reading a programmable resistance memory cell in a cross-point memory array, the method comprising:
driving a read current to a selected word line connected to a selected programmable resistance memory cell in the cross-point memory array while providing a select voltage to a selected bit line connected to the selected programmable resistance memory cell, the programmable resistance memory cell having a threshold switching selector in series with a programmable resistance memory element, wherein the read current alters the voltage on the selected word line to increase a difference in voltage between the selected word line and the selected bit line;
connecting a resistor to the selected word line to divert an increasing amount of the read current through the resistor as a voltage across the selected memory cell increases in response to driving the read current to the selected word while allowing the voltage on the selected word line to change to increase a voltage across the selected memory cell until the threshold switching selector of the selected memory cell switches on, wherein a snapback current results following the threshold switching selector of the selected memory cell switching on in response to the voltage across the selected memory cell reaching a threshold voltage of the threshold switching selector;
maintaining the connection of the resistor to the selected word line to divert current through the resistor to thereby reduce current flow through the programmable resistance memory element as the snapback current dissipates while allowing a voltage on the selected word line to change; and
sensing the selected memory cell in response to the read current passing through the selected memory cell after the snapback current has dissipated.
12 . The method of claim 11 , further comprising:
applying a first voltage to a first terminal of the resistor, wherein connecting the resistor to the selected word line comprises connecting a second terminal of the resistor to the selected word line, wherein the first voltage is lower than the threshold voltage of the threshold switching selector.
13 . The method of claim 12 , further comprising:
maintaining the connection of the resistor to the selected word line while sensing the selected memory cell in response to the read current passing through the selected memory cell after the snapback current has dissipated.
14 . The method of claim 12 , further comprising:
disconnecting the resistor from the selected word line after the snapback current has dissipated and prior to sensing the selected memory cell in response to the read current passing through the selected memory cell.
15 . A memory system comprising:
a cross-point memory array, the cross-point memory array comprising a set of word lines, a set of bit lines, and programmable resistance memory cells, each programmable resistance memory cell having a programmable resistance memory element in series with a threshold switching selector;
a resistor having a first terminal and a second terminal; and
a control circuit in communication with the cross-point memory array and the resistor, the control circuit configured to:
provide a select voltage to a selected bit line connected to a selected memory cell;
drive a read current to a selected word line connected to the selected memory cell while providing the select voltage to the selected bit line to increase a difference in voltage between the selected word line and the selected bit line until the threshold switching selector of the selected memory cell switches on;
provide a voltage to the first terminal of the resistor and connect the second terminal of the resistor to the selected word line to divert an increasing portion of the read current through the resistor while allowing a voltage on the selected word line to change until the threshold switching selector of the selected memory cell switches on and divert a decreasing portion of the read current through the resistor while allowing a voltage on the selected word line to change until a voltage across the threshold switching selector falls to an offset voltage of the threshold switching selector; and
sense the selected memory cell in response to the read current after the voltage across the threshold switching selector falls to the offset voltage of the threshold switching selector.
16 . The memory system of claim 15 , wherein the control circuit is further configured to:
disconnect the second terminal of the resistor from the selected word line after the threshold switching selector in the selected memory cell turns on and prior to sensing the selected memory cell in response to the read current.
17 . The memory system of claim 15 , wherein the control circuit is further configured to:
maintain the connection of the second terminal of the resistor to the selected word line while sensing the selected memory cell in response to the read current.
18 . The memory system of claim 15 , wherein the threshold switching selector comprises an Ovonic Threshold Switch (OTS).
19 . The memory system of claim 15 , wherein the programmable resistance memory element comprises a magnetoresistive memory element.
20 . The memory system of claim 15 , wherein the programmable resistance memory element comprises a phase change memory element.