Semiconductor device and method of fabricating the same
A semiconductor device and a method of fabricating a semiconductor device, the semiconductor device includes an active pattern; a gate structure on the active pattern; a bit-line structure electrically connected to the active pattern; a storage node contact electrically connected to the active pattern; and a landing pad electrically connected to the storage node contact, wherein the landing pad includes a first pad flat sidewall and a second pad flat sidewall that are opposite to each other, a third pad flat sidewall between the first pad flat sidewall and the second pad flat sidewall, a fourth pad flat sidewall between the first pad flat sidewall and the second pad flat sidewall, a first pad curved sidewall between the first pad flat sidewall and the third pad flat sidewall, and a second pad curved sidewall between the first pad flat sidewall and the fourth pad flat sidewall.
1 . A semiconductor device, comprising:
an active pattern;
a gate structure extending lengthwise in a first direction on the active pattern;
a bit-line structure electrically connected to the active pattern;
a storage node contact electrically connected to the active pattern; and
a landing pad electrically connected to the storage node contact,
wherein the landing pad includes:
a first pad flat sidewall parallel to the first direction and a second pad flat sidewall parallel to the first direction, the first pad flat sidewall opposite to the second pad flat sidewall,
a third pad flat sidewall between the first pad flat sidewall and the second pad flat sidewall,
a fourth pad flat sidewall between the first pad flat sidewall and the second pad flat sidewall,
a first pad curved sidewall between the first pad flat sidewall and the third pad flat sidewall, and
a second pad curved sidewall between the first pad flat sidewall and the fourth pad flat sidewall,
wherein a first angle between the first pad flat sidewall and the third pad flat sidewall is less than a second angle between the first pad flat sidewall and the fourth pad flat sidewall.
2 . The semiconductor device as claimed in claim 1 , further comprising a data storage pattern electrically connected to the landing pad.
3 . The semiconductor device as claimed in claim 1 , wherein the landing pad further includes:
a third pad curved sidewall between the second pad flat sidewall and the third pad flat sidewalls, and
a fourth pad curved sidewall between the second pad flat sidewall and the fourth pad flat sidewall.
4 . The semiconductor device as claimed in claim 1 , wherein:
the first to fourth pad flat sidewalls are flat, and
the first and second pad curved sidewalls are curved.
5 . The semiconductor device as claimed in claim 1 , wherein:
the landing pad includes:
a lower part connected to the storage node contact, and
an upper part on the lower part of the landing pad, and
the first to fourth pad flat sidewalls of the landing pad and the first and second pad curved sidewalls of the landing pad are sidewalls of the upper part of the landing pad.
6 . The semiconductor device as claimed in claim 5 , wherein a portion of the upper part of the landing pad overlaps a portion of the storage node contact.
7 . The semiconductor device as claimed in claim 1 , wherein a top surface of the storage node contact is coplanar with a top surface of the bit-line structure.
8 . The semiconductor device as claimed in claim 7 , wherein the top surface of the storage node contact is coplanar with a top surface of a bit-line capping layer in the bit-line structure and with a top surface of a bit-line spacer in the bit-line structure.
9 . The semiconductor device as claimed in claim 8 , wherein the landing pad is in contact with the top surface of the bit-line capping layer and the top surface of the bit-line spacer.
10 . A semiconductor device, comprising:
an active pattern;
a bit-line structure extending lengthwise in a first direction and electrically connected to the active pattern;
a storage node contact electrically connected to the active pattern; and
a landing pad electrically connected to the storage node contact,
wherein the landing pad includes:
a first pad flat sidewall parallel to a second direction and a second pad flat sidewall parallel to the second direction and that are opposite to each other,
a third pad flat sidewall between the first pad flat sidewall and the second pad flat sidewall, and
a fourth pad flat sidewall between the first pad flat sidewall and the second pad flat sidewall,
wherein the second direction is perpendicular to the first direction,
wherein the third pad flat sidewall and the fourth pad flat sidewall are parallel to each other, and
wherein a first angle between the first pad flat sidewall and the third pad flat sidewall is less than a second angle between the first pad flat sidewall and the fourth pad flat sidewall.
11 . The semiconductor device as claimed in claim 10 , wherein the landing pad further includes:
a first pad curved sidewall connected to the first pad flat sidewall and the third pad flat sidewall,
a second pad curved sidewall connected to the first pad flat sidewall and the fourth pad flat sidewall,
a third pad curved sidewall connected to the second pad flat sidewall and the third pad flat sidewall, and
a fourth pad curved sidewall connected to the second pad flat sidewall and the fourth pad flat sidewall.
12 . The semiconductor device as claimed in claim 11 , wherein:
the first to fourth pad flat sidewalls are flat, and
the first to fourth pad curved sidewalls are curved.
13 . The semiconductor device as claimed in claim 11 , wherein a distance between the first pad curved sidewall and the fourth pad curved sidewall is greater than a distance between the second pad curved sidewall and the third pad curved sidewall.
14 . The semiconductor device as claimed in claim 10 , further comprising a connection conductive pattern connected to the landing pad and the storage node contact.
15 . The semiconductor device as claimed in claim 14 , wherein a top surface of the connection conductive pattern is coplanar with a top surface of the bit-line structure.
16 . The semiconductor device as claimed in claim 15 , wherein the landing pad is in contact with the top surface of the connection conductive pattern and the top surface of the bit-line structure.
17 . The semiconductor device as claimed in claim 16 , wherein the landing pad is in contact with a top surface of a bit-line capping layer in the bit-line structure and with a top surface of a bit-line spacer in the bit-line structure.
18 . The semiconductor device as claimed in claim 14 , wherein the connection conductive pattern and the landing pad include a metal.
19 . A semiconductor device, comprising:
an active pattern;
a gate structure extending lengthwise in a first direction on the active pattern;
a dielectric pattern on the gate structure;
a bit-line structure on the dielectric pattern;
a storage node contact on a sidewall of the bit-line structure;
a landing pad electrically connected to the storage node contact; and
a filling pattern that surrounds the landing pad,
wherein the landing pad includes:
a lower part connected to the storage node contact, and
an upper part on the lower part of the landing pad,
wherein the upper part of the landing pad includes:
a first pad flat sidewall and a second pad flat sidewall that are opposite to each other and are both parallel to the first direction,
a third pad flat sidewall between the first pad flat sidewall and the second pad flat sidewall,
a fourth pad flat sidewall between the first pad flat sidewall and the second pad flat sidewall,
a first pad curved sidewall connected to the first pad flat sidewall and the third pad flat sidewall,
a second pad curved sidewall connected to the first pad flat sidewall and the fourth pad flat sidewall,
a third pad curved sidewall connected to the second pad flat sidewall and the third pad flat sidewall, and
a fourth pad curved sidewall connected to the second pad flat sidewall and the fourth pad flat sidewall,
wherein the first to fourth pad flat sidewalls are flat,
wherein the first to fourth pad curved sidewalls are curved, and
wherein a distance between the first pad curved sidewall and the fourth pad curved sidewall is greater than a distance between the second pad curved sidewall and the third pad curved sidewall.
20 . The semiconductor device as claimed in claim 19 , wherein:
the first pad flat sidewall and the second pad flat sidewall are parallel to each other, and
the third pad flat sidewall and the fourth pad flat sidewall are parallel to each other.