IP Library Granted Patent US 12,651,563
Granted Patent B2
US 12,651,563 · App. 18/959,928 · Granted Jun 9, 2026

Display system and electronic device

Inventors: Shunpei Yamazaki (Setagaya, JP); Tatsuya Onuki (Atsugi, JP); Hajime Kimura (Atsugi, JP)
Assignee: Semiconductor Energy Laboratory Co., Ltd.
G09G3/3208
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Quick Facts
Patent No.
US 12,651,563
App. No.
18/959,928
Granted
Jun 9, 2026
Kind
B2
Abstract

Provided is a display system with high display quality and high resolution. The display system includes a first layer and a display portion. The display portion is positioned in a region overlapping with the first layer. The first layer includes a semiconductor substrate containing silicon as a material, and a plurality of first transistors and a plurality of second transistors whose channel formation regions contain silicon are formed over the semiconductor substrate. The first layer includes a first circuit and a second circuit; the first circuit includes a driver circuit for driving the display portion; and the second circuit includes a memory device, a GPU, and an EL correction circuit. The display portion includes a pixel, and the pixel includes a light-emitting device containing organic EL and is electrically connected to the driver circuit. The memory device has a function of retaining image data; the GPU has a function of decoding the image data read from the memory device; and the EL correction circuit has a function of correcting light emitted from the light-emitting device.

Claims (85)

1 . An electronic device comprising:

a first layer;

a second layer over the first layer; and

a display portion over the second layer,

wherein the display portion and the first layer overlap with each other,

wherein the second layer and the first layer overlap with each other,

wherein the first layer comprises a semiconductor substrate comprising silicon,

wherein the first layer comprises a plurality of first transistors and a plurality of second transistors whose channel formation regions comprise silicon in the semiconductor substrate,

wherein the second layer comprises a third transistor comprising an oxide semiconductor in a channel formation region,

wherein the first layer comprises a first circuit and a second circuit,

wherein the first circuit comprises a source driver circuit and a gate driver circuit,

wherein the source driver circuit and the gate driver circuit each comprise any of the plurality of first transistors,

wherein the second circuit comprises a memory device, an EL correction circuit, and a timing controller,

wherein the memory device, the EL correction circuit, and the timing controller each comprise any of the plurality of second transistors,

wherein the display portion comprises a pixel comprising a light-emitting device, and

wherein the pixel is electrically connected to the source driver circuit and the gate driver circuit.

2 . The electronic device according to claim 1 ,

wherein the second circuit comprises a CPU comprising any of the plurality of second transistors, and

wherein the CPU is configured to transmit a control signal to one or more selected from the memory device, the EL correction circuit, and the timing controller.

3 . The electronic device according to claim 1 , wherein the electronic device is a head-mounted display.

4 . The electronic device according to claim 1 ,

wherein the memory device is configured to retain image data,

wherein the EL correction circuit is configured to correct luminance of light emitted from the light-emitting device, and

wherein the timing controller is configured to increase or decrease a frame rate at which an image is displayed on the display portion.

5 . The electronic device according to claim 1 ,

wherein the third transistor comprises a first gate electrode and a second gate electrode, and

wherein the channel formation region of the third transistor is between the first gate electrode and the second gate electrode.

6 . The electronic device according to claim 5 , wherein the third transistor comprises a gate insulator in contact with a side surface of the first gate electrode.

7 . An electronic device comprising:

a first layer;

a second layer over the first layer; and

a display portion over the second layer,

wherein the display portion and the first layer overlap with each other,

wherein the second layer and the first layer overlap with each other,

wherein the first layer comprises a semiconductor substrate comprising silicon,

wherein the first layer comprises a plurality of first transistors and a plurality of second transistors whose channel formation regions comprise silicon in the semiconductor substrate,

wherein the second layer comprises a third transistor comprising an oxide semiconductor in a channel formation region,

wherein the first layer comprises a first circuit and a second circuit,

wherein the first circuit comprises a driver circuit,

wherein the driver circuit comprises any of the plurality of first transistors,

wherein the second circuit comprises a memory device, an EL correction circuit, and a timing controller,

wherein the memory device, the EL correction circuit, and the timing controller each comprise any of the plurality of second transistors,

wherein the display portion comprises a pixel comprising a light-emitting device, and

wherein the pixel is electrically connected to the driver circuit.

8 . The electronic device according to claim 7 ,

wherein the second circuit comprises a CPU comprising any of the plurality of second transistors, and

wherein the CPU is configured to transmit a control signal to one or more selected from the memory device, the EL correction circuit, and the timing controller.

9 . The electronic device according to claim 7 , wherein the electronic device is a head-mounted display.

10 . The electronic device according to claim 7 ,

wherein the memory device is configured to retain image data,

wherein the EL correction circuit is configured to correct luminance of light emitted from the light-emitting device, and

wherein the timing controller is configured to increase or decrease a frame rate at which an image is displayed on the display portion.

11 . The electronic device according to claim 7 ,

wherein the third transistor comprises a first gate electrode and a second gate electrode, and

wherein the channel formation region of the third transistor is between the first gate electrode and the second gate electrode.

12 . The electronic device according to claim 11 , wherein the third transistor comprises a gate insulator in contact with a side surface of the first gate electrode.

13 . An electronic device comprising:

a first layer;

a second layer over the first layer; and

a display portion over the second layer,

wherein the display portion and the first layer overlap with each other,

wherein the second layer and the first layer overlap with each other,

wherein the first layer comprises a semiconductor substrate comprising silicon,

wherein the first layer comprises a plurality of first transistors and a plurality of second transistors whose channel formation regions comprise silicon in the semiconductor substrate,

wherein the second layer comprises a third transistor comprising an oxide semiconductor in a channel formation region,

wherein the first layer comprises a first circuit and a second circuit,

wherein the first circuit comprises a driver circuit,

wherein the driver circuit comprises any of the plurality of first transistors,

wherein the second circuit comprises a memory device, an EL correction circuit, and a timing controller,

wherein the memory device, the EL correction circuit, and the timing controller each comprise any of the plurality of second transistors,

wherein the display portion comprises a pixel comprising a light-emitting device and a fourth transistor electrically connected to the light-emitting device,

wherein the fourth transistor comprises an oxide semiconductor in a channel formation region, and

wherein the pixel is electrically connected to the driver circuit.

14 . The electronic device according to claim 13 ,

wherein the second circuit comprises a CPU comprising any of the plurality of second transistors, and

wherein the CPU is configured to transmit a control signal to one or more selected from the memory device, the EL correction circuit, and the timing controller.

15 . The electronic device according to claim 13 , wherein the electronic device is a head-mounted display.

16 . The electronic device according to claim 13 ,

wherein the memory device is configured to retain image data,

wherein the EL correction circuit is configured to correct luminance of light emitted from the light-emitting device, and

wherein the timing controller is configured to increase or decrease a frame rate at which an image is displayed on the display portion.

17 . The electronic device according to claim 13 ,

wherein the third transistor comprises a first gate electrode and a second gate electrode, and

wherein the channel formation region of the third transistor is between the first gate electrode and the second gate electrode.

18 . The electronic device according to claim 17 , wherein the third transistor comprises a gate insulator in contact with a side surface of the first gate electrode.

Priority Claims (2)
JP 2020-202341 · Dec 6, 2020 · national
JP 2020-205918 · Dec 11, 2020 · national
Continuity (2)
Continuation 18036931
Related Publication 20250087145A1 · Mar 13, 2025
References Cited (60)
US 7068253B2 · Kudo et al. · 2006 [cited by applicant]
US 7453433B2 · Kudo et al. · 2008 [cited by applicant]
US 8130190B2 · Kudo et al. · 2012 [cited by applicant]
US 8421829B2 · Kudo et al. · 2013 [cited by applicant]
US 8823627B2 · Kudo et al. · 2014 [cited by applicant]
US 9496408B2 · Yamazaki et al. · 2016 [cited by applicant]
US 9696899B2 · Kim et al. · 2017 [cited by applicant]
US 10394069B2 · Yamazaki et al. · 2019 [cited by applicant]
US 10607575B2 · Iwaki et al. · 2020 [cited by applicant]
US 10891899B2 · Jun · 2021 [cited by applicant]
US 11360728B2 · Kim et al. · 2022 [cited by applicant]
US 11423844B2 · Ikeda et al. · 2022 [cited by applicant]
US 12159573B2 · Yamazaki · 2024 [cited by examiner]
US 20020015016A1 · Kudo et al. · 2002 [cited by applicant]
US 20070001982A1 · Ito et al. · 2007 [cited by applicant]
US 20100176395A1 · Choi et al. · 2010 [cited by applicant]
US 20140101579A1 · Kim et al. · 2014 [cited by applicant]
US 20140181700A1 · Kim et al. · 2014 [cited by applicant]
US 20150212647A1 · Kim et al. · 2015 [cited by applicant]
US 20150364070A1 · Lv et al. · 2015 [cited by applicant]
US 20170061857A1 · Lee et al. · 2017 [cited by applicant]
US 20170178586A1 · Kim et al. · 2017 [cited by applicant]
US 20170285906A1 · Kim et al. · 2017 [cited by applicant]
US 20180096666A1 · Chung · 2018 [cited by examiner]
US 20180188867A1 · Yeh · 2018 [cited by applicant]
US 20180211596A1 · Gu · 2018 [cited by examiner]
US 20180268780A1 · Bae · 2018 [cited by examiner]
US 20180308871A1 · Wu et al. · 2018 [cited by applicant]
US 20190025660A1 · Shimoshikiryoh et al. · 2019 [cited by applicant]
US 20190051245A1 · Jun · 2019 [cited by examiner]
US 20190236765A1 · Yeo · 2019 [cited by examiner]
US 20190317374A1 · Yamazaki et al. · 2019 [cited by applicant]
US 20190335553A1 · Ahmed · 2019 [cited by examiner]
US 20200014904A1 · Wetzstein et al. · 2020 [cited by applicant]
US 20200126244A1 · Lee · 2020 [cited by examiner]
US 20200135825A1 · Cha · 2020 [cited by examiner]
US 20230022181A1 · Ikeda et al. · 2023 [cited by applicant]
CN 103729160A · 2014 [cited by applicant]
CN 109389940A · 2019 [cited by applicant]
CN 109964172A · 2019 [cited by applicant]
CN 112585669A · 2021 [cited by applicant]
EP 2720110A · 2014 [cited by applicant]
EP 3441964A · 2019 [cited by applicant]
JP 2002108308A · 2002 [cited by applicant]
JP 2013225620A · 2013 [cited by applicant]
JP 2014078234A · 2014 [cited by applicant]
JP 2019035957A · 2019 [cited by applicant]
KR 20020013715A · 2002 [cited by applicant]
KR 20140046319A · 2014 [cited by applicant]
KR 20190016857A · 2019 [cited by applicant]
KR 20190082289A · 2019 [cited by applicant]
KR 20210028240A · 2021 [cited by applicant]
TW 201828277 · 2018 [cited by applicant]
WO WO2018060817 · 2018 [cited by applicant]
WO WO2018096425 · 2018 [cited by applicant]
WO WO2019220278 · 2019 [cited by applicant]
WO WO2020010183 · 2020 [cited by applicant]
International Search Report (Application No. PCT/IB2021/060993) Dated Mar. 22, 2022. [cited by applicant]
Written Opinion (Application No. PCT/IB2021/060993) Dated Mar. 22, 2022. [cited by applicant]
Taiwanese Office Action (Application No. 110144677) Dated Jul. 18, 2025. [cited by applicant]