Semiconductor devices including silicon nitride (SiN), silicon oxycarbide (SiOC), or silicon oxycarbonitride (SiOCN) liners
A semiconductor device may include an active pattern on a substrate; an isolation pattern on the substrate, the isolation pattern covering opposite sidewalls of the active pattern; a liner on the isolation pattern, a liner including a material different from the isolation pattern; a gate structure contacting an upper surface of the active pattern and an upper surface of the liner; and a plurality of channels spaced apart from each other in a vertical direction perpendicular to an upper surface of the substrate, each of the plurality of channels extending through the gate structure.
1 . A semiconductor device comprising:
an active pattern on a substrate;
an isolation pattern on the substrate, the isolation pattern covering opposite sidewalls of the active pattern;
a liner on the isolation pattern, the liner including a material different from a material of the isolation pattern;
a gate structure disposed on an upper surface of the active pattern and an upper surface of the liner; and
a plurality of channels spaced apart from each other in a vertical direction perpendicular to an upper surface of the substrate, each of the plurality of channels extending through the gate structure,
wherein the gate structure includes a gate insulation pattern and a gate electrode sequentially stacked on the upper surface of the liner, and
wherein the liner contacts an upper portion of each of the opposite sidewalls of the active pattern.
2 . The semiconductor device according to claim 1 , wherein the isolation pattern includes silicon oxide (SiO 2 ), and
wherein the liner includes silicon nitride (SiN), silicon oxycarbide (SiOC) or silicon oxycarbonitride (SiOCN).
3 . The semiconductor device according to claim 2 , wherein the liner includes silicon nitride (SiN), and
wherein a concentration of nitrogen in the liner is constant along the vertical direction.
4 . The semiconductor device according to claim 2 , wherein the liner includes silicon oxycarbide (SiOC) or silicon oxycarbonitride (SiOCN), and
wherein a concentration of carbon in the liner is constant along the vertical direction.
5 . The semiconductor device according to claim 1 , wherein the active pattern extends in a first direction parallel to the upper surface of the substrate,
wherein the isolation pattern covers the opposite sidewalls of the active pattern in a second direction, the second direction being parallel to the upper surface of the substrate and crossing the first direction, and
wherein the gate structure extends in the second direction on the active pattern and the liner.
6 . The semiconductor device according to claim 5 , wherein an uppermost surface of a portion of the liner under the gate structure is at the same height as or lower than an upper surface of a portion of the active pattern adjacent to the portion of the liner in the second direction.
7 . The semiconductor device according to claim 6 , wherein the upper surface of the liner has a constant height.
8 . The semiconductor device according to claim 6 , wherein the portion of the liner adjacent to the active pattern protrudes in the vertical direction.
9 . The semiconductor device according to claim 6 , wherein upper surfaces of edge portions in the second direction of the liner are higher than an upper surface of a middle portion in the second direction of the liner.
10 . The semiconductor device according to claim 1 , wherein the gate structure further includes a gate barrier between the gate insulation pattern and the gate electrode.
11 . The semiconductor device according to claim 10 , wherein the gate insulation pattern includes a metal oxide.
12 . The semiconductor device according to claim 1 further comprising:
a source/drain layer on a portion of the active pattern adjacent to the gate structure, the source/drain layer contacting the plurality of channels,
wherein the liner covers a portion of a sidewall of the source/drain layer.
13 . A semiconductor device comprising:
an active pattern on a substrate, the active pattern extending in a first direction parallel to an upper surface of the substrate;
an isolation pattern on the substrate, the isolation pattern covering opposite sidewalls in a second direction of the active pattern, the second direction being parallel to the upper surface of the substrate and crossing the first direction;
a liner on the isolation pattern, the liner extending in the first direction;
a gate structure on the active pattern and the liner, the gate structure extending in the second direction;
a plurality of channels spaced apart from each other in a vertical direction perpendicular to the upper surface of the substrate, each of the plurality of channels extending through the gate structure; and
a source/drain layer on a portion of the active pattern adjacent to the gate structure in the first direction, the source/drain layer contacting the plurality of channels,
wherein the liner includes a material of silicon oxycarbide (SiOC), and a concentration of carbon in the liner is constant along the vertical direction,
wherein the gate structure includes a gate insulation pattern and a gate electrode sequentially stacked on the liner, and
wherein the liner contacts an upper portion of each of the opposite sidewalls of the active pattern.
14 . The semiconductor device according to claim 13 , wherein an uppermost surface of a portion of the liner under the gate structure is at the same height as or lower than an upper surface of a portion of the active pattern adjacent to the portion of the liner in the second direction.
15 . The semiconductor device according to claim 14 , wherein an upper surface of the liner has a constant height.
16 . The semiconductor device according to claim 14 , wherein upper surfaces of edge portions in the second direction of the liner are higher than an upper surface of a middle portion in the second direction of the liner.
17 . The semiconductor device according to claim 13 , wherein the gate structure further includes a gate barrier between the gate insulation pattern and the gate electrode, and
wherein the gate insulation pattern includes a metal oxide.
18 . A semiconductor device comprising:
an active pattern on a substrate, the active pattern extending in a first direction parallel to an upper surface of the substrate;
an isolation pattern on the substrate, the isolation pattern covering opposite sidewalls in a second direction of the active pattern, and the second direction being parallel to the upper surface of the substrate and crossing the first direction;
a liner on the isolation pattern, the liner extending in the first direction;
a gate structure on the active pattern and the liner, the gate structure extending in the second direction;
a plurality of channels spaced apart from each other in a vertical direction perpendicular to the upper surface of the substrate, each of the plurality of channels extending through the gate structure; and
a source/drain layer on a portion of the active pattern at each of opposite sides of the gate structure in the first direction, the source/drain layer contacting the plurality of channels,
wherein the gate structure includes a gate insulation pattern and a gate electrode sequentially stacked on the liner,
wherein each of edge portions in the second direction of the liner:
protrudes in the vertical direction, and
is higher than an upper surface of a middle portion in the second direction of the liner, and
wherein the liner contacts an upper portion of each of the opposite sidewalls of the active pattern.
19 . The semiconductor device according to claim 18 , wherein:
the isolation pattern includes silicon oxide (SiO 2 ),
the liner includes silicon nitride (SiN), and
a concentration of nitrogen in the liner is constant along the vertical direction.
20 . The semiconductor device according to claim 18 , wherein:
the isolation pattern includes silicon oxide (SiO 2 ),
the liner includes silicon oxycarbide (SiOC) or silicon oxycarbonitride (SiOCN), and
a concentration of carbon in the liner is constant along the vertical direction.