IP Library › Granted Patent US 12,653,061
Granted Patent B2
US 12,653,061 · App. 18/520,467 · Granted Jun 9, 2026

Package structure and method of manufacturing the same

Inventors: Tsung-Shu Lin (New Taipei City, TW); Hsuan-Ning Shih (Taoyuan City, TW)
Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
H10W74/019H10W70/093H10W70/614H10W90/701H10W70/099H10W70/60H10W70/655H10W72/073H10W72/242H10W72/853H10W72/874H10W90/00H10W90/10
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Quick Facts
Patent No.
US 12,653,061
App. No.
18/520,467
Granted
Jun 9, 2026
Kind
B2
Abstract

A package structure includes a semiconductor die, a redistribution circuit structure, and conductive pads. The redistribution circuit structure is located on and electrically connected to the semiconductor die, the redistribution circuit structure includes a first contact pad having a first width and a second contact pad having a second width. The conductive pads are located on and electrically connected to the redistribution circuit structure through connecting to the first contact pad and the second contact pad, the redistribution circuit structure is located between the conductive pads and the semiconductor die. The first width of the first contact pad is less than a width of the conductive pads, and the second width of the second contact pad is substantially equal to or greater than the width of the conductive pads.

Claims (57)

1 . A method of manufacturing a package structure, comprising:

laterally encapsulating a die in an insulating encapsulation, the insulating encapsulation being disposed in a first region of the package structure, and the die being disposed in a second region of the package structure;

forming a first redistribution circuit structure over the insulating encapsulation and the die, the die electrically coupling to the first redistribution circuit structure, and forming the first redistribution circuit structure comprising forming a topmost conductive layer of the first redistribution circuit structure, wherein the forming the topmost conductive layer comprising:

forming a first contact pad having a first width; and

forming a second contact pad having a second width, the first width being less than the second width, wherein the first contact pad is disposed in the first region, and the second contact pad is disposed in the second region;

forming conductive patterns to connect to the first redistribution circuit structure, wherein the first width of the first contact pad is less than a third width of a first conductive pattern of the conductive patterns, and the second width of the second contact pad is substantially equal to or greater than a fourth width of a second conductive pattern of the conductive patterns, wherein the first conductive pattern is disposed on the first contact pad, and the second conductive pattern is disposed on the second contact pad; and

disposing conductive terminals respectively over the conductive patterns to electrically connect the conductive terminals and the first redistribution circuit structure.

2 . The method of claim 1 , wherein prior to laterally encapsulating the die in the insulating encapsulation, the method further comprises:

forming a second redistribution circuit structure;

placing the die over the second redistribution circuit structure; and

providing a plurality of conductive pillars over the second redistribution circuit structure and next to the die,

wherein laterally encapsulating the die in the insulating encapsulation comprises:

forming an insulating material over the second redistribution circuit structure to cover the die, the plurality of conductive pillars and the second redistribution circuit structure; and

planarizing the insulating material to form the insulating encapsulation laterally encapsulating the die and the plurality of conductive pillars, the first redistribution circuit structure electrically coupling to the second redistribution circuit structure through the plurality of conductive pillars.

3 . The method of claim 2 , further comprising:

disposing a plurality of conductive terminals over the second redistribution circuit structure, the plurality of conductive terminals being electrically coupled to the die through the second redistribution circuit structure, the plurality of conductive pillars, and the first redistribution circuit structure,

wherein the second redistribution circuit structure is disposed between the die and the plurality of conductive terminals.

4 . The method of claim 2 , wherein placing the die over the second redistribution circuit structure comprises:

adhering the die to the second redistribution circuit structure through a connecting film.

5 . The method of claim 2 , wherein providing the plurality of conductive pillars over the second redistribution circuit structure is prior to placing the die over the second redistribution circuit structure.

6 . The method of claim 1 , wherein the first contact pad is formed to be surrounded by a buffer region, and at least 50 % of an overall area of the buffer region is occupied by a metal feature formed in a same layer where the first contact pad and the second contact pad formed therein.

7 . The method of claim 6 , wherein the buffer region is formed to have a closed ring pattern or an annular pattern.

8 . The method of claim 7 , wherein the buffer region is formed to be concentric with a respective one conductive pattern of the conductive patterns dispose on the first contact pad.

9 . The method of claim 8 , wherein in a plane view, a first distance from an inner sidewall of the buffer region to an edge of the respective one conductive pattern is substantially equal to a second distance from an outer sidewall of the buffer region to the edge of the respective one conductive pattern.

10 . The method of claim 1 , wherein the first contact pad is formed to be free from the second region of the package structure.

11 . A method of manufacturing a package structure, comprising:

providing a carrier;

disposing at least one semiconductor die over the carrier;

encapsulating the at least one semiconductor die in an insulating material, wherein in a plane view, the package structure comprising a first region disposed with the insulating material, a second region disposed with the at least one semiconductor die, and at least one dummy region overlapped with the first region and the second region and disposed on a respective corner of the second region;

forming a redistribution structure on the insulating material and the at least one semiconductor die, and the at least one semiconductor die electrically coupling to the redistribution structure, and forming the redistribution structure comprising forming a topmost conductive layer of the redistribution structure, wherein the forming the topmost conductive layer comprising:

forming a first contact pad having a first width within the first region, wherein a portion of the first region overlapped with the at least one dummy region is free of the first contact pad; and

forming a second contact pad having a second width within the second region, the first width is less than the second width; and

forming a plurality of conductive patterns to connect to the redistribution structure, wherein the first width of the first contact pad is less than a third width of a first conductive pattern of the plurality of conductive patterns, and the second width of the second contact pad is substantially equal to or greater than a fourth width of a second conductive pattern of the plurality of conductive patterns, wherein the first conductive pattern is disposed on the first contact pad, and the second conductive pattern is disposed on the second contact pad;

disposing conductive terminals on the plurality of conductive patterns over the redistribution structure so to being electrically coupled thereto.

12 . The method of claim 11 , wherein the second contact pad is further formed within the first region.

13 . The method of claim 11 , wherein the second contact pad is further formed within the first region and the at least one dummy region.

14 . The method of claim 11 , wherein the first contact pad is free of the second region.

15 . The method of claim 11 , wherein the carrier is provided to serve as a heat dissipating element for the package structure or configured to control a warpage of the package structures.

16 . The method of claim 11 , further comprising:

forming a redistribution circuit structure on the insulating material, the insulating material being located between the redistribution structure and the redistribution circuit structure;

forming a plurality of through vias for electrically connecting the redistribution structure and the redistribution circuit structure, the plurality of through via penetrating through the insulating material and next to the at least one semiconductor die; and

disposing a plurality of conductive connectors on the redistribution circuit structure, the redistribution circuit structure being located between the insulating material and the plurality of conductive connectors.

17 . A method of manufacturing a package structure, comprising:

forming a back-side redistribution structure;

forming a plurality of conductive pillars over the back-side redistribution structure;

disposed a die over the back-side redistribution structure and next to the plurality of conductive pillars;

forming a front-side redistribution structure over the plurality of conductive pillars and the die, the back-side redistribution structure being electrically coupled to the front-side redistribution structure through the plurality of conductive pillars, the die being electrically coupled to the front-side redistribution structure and the back-side redistribution structure, wherein forming the front-side redistribution structure comprises forming a topmost conductive layer, wherein the forming the topmost conductive layer comprises:

forming a plurality of first contact pads each having a first width; and

forming a plurality of second contact pads each having a second width, wherein the first width is less than the second width,

wherein in a cross section of the package structure along a stacking direction of the front-side redistribution structure and the back-side redistribution structure, the plurality of first contact pads are laterally aside of the die and are overlapped with the plurality of conductive pillars, and the plurality of second contact pads are overlapped with the die;

forming a plurality of conductive patterns to connect to the front-side redistribution structure, wherein the first width of the plurality of first contact pads is less than a third width of first conductive patterns of the plurality of conductive patterns, and the second width of the plurality of second contact pads is substantially equal to or greater than a fourth width of second conductive patterns of the plurality of conductive patterns, wherein the first conductive patterns respectively are disposed on the plurality of first contact pads, and the second conductive patterns are respectively disposed on the plurality of second contact pads; and

disposing conductive terminals on the plurality of conductive patterns to electrically connect the conductive terminals and the front-side redistribution structure.

18 . The method of claim 17 , wherein the plurality of conductive pillars are formed to further extend into the back-side redistribution structure.

19 . The method of claim 17 , further comprising:

forming an encapsulant between the back-side redistribution structure and the front-side redistribution structure to encapsulate the die and the plurality of conductive pillars,

wherein in the cross section along the stacking direction, the plurality of first contact pads are further overlapped with the encapsulant.

20 . The method of claim 19 , wherein the plurality of second contact pad are further overlapped with the encapsulant.

Continuity (4)
Division 17378798 · Jul 19, 2021
Continuation 16409880 · May 13, 2019
Provisional Application 62784680 · Dec 24, 2018
Related Publication 20240096837A1 · Mar 21, 2024
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